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Proposal of new material for ferroelectric thin film memories and method to evaluate material properties.

Research Project

Project/Area Number 11555233
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 無機工業化学
Research InstitutionTokyo Institute of Technology

Principal Investigator

TSURUMI Takaaki  Graduate School of Science and Engineering, Department of Material Science, Professor, 大学院・理工学研究科, 教授 (70188647)

Co-Investigator(Kenkyū-buntansha) YAMASHITA Yahachi  Toshiba Corp., R & D center, Chief Researcher, 研究開発センター, 主任研究員
OHASHI Naoki  National Institute for Materials Science, Senior Researcher, 主任研究員 (60251617)
WADA Satoshi  Graduate School of Science and Engineering, Department of Material Science, Associate Professor, 大学院・理工学研究科, 助教授 (60240545)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥13,700,000 (Direct Cost: ¥13,700,000)
Fiscal Year 2001: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2000: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1999: ¥9,400,000 (Direct Cost: ¥9,400,000)
Keywordsferroelectric thin film memory / hysteresis curve / sputtering / domain structure / lead titanate / perovskite compounds / 強誘電体 / 圧電体 / 相転移 / 超音波トランスデゥーサ / チタン酸鉛 / PZT / レーザ干渉計
Research Abstract

The purpose of the present research was 1) to develop a new ferroelectric material which could be crystallized below 450 ℃ and 2) to establish the method to measure the polarization vs. electric-field (P-E) hysteresis curves at high frequencies. These are considerably important to realize the ferroelectric thin film memories(FeRAMs). For the first purpose, we have proposed (Pb,Sr)TiO_3 as a ferroelectric material and thin films of this material were prepared by the sputtering process. The relation between the substrate temperature and the chemical composition of the films was first studied and it was confirmed that the lead component in the films was reduced with increasing substrate temperature. DC-bias field was applied to the substrate during the deposition. Negative field markedly reduced the deposition rate of lead component. By optimizing the deposition conditions, the crystallization temperature of PST was decreased as low as 430 ℃. The addition of Bi improved the remanent polarization up to 20 μC/cm_2. On the other hand, for the second purpose, we have employed a high-speed operation amplifier as a current-voltage converter in the measuring system and the displacive current through the PZT thin film was converted to the voltage signal followed by integrating to calculated polarization. The coercive field (E_c) of the PZT thin films strongly depended on the measuring frequency, nevertheless their remanent polarization was almost independent of it. The domain switching kinetics of PZT thin films could be explained by the nucleation-controlled model. A guideline to make FeRAMs with a high operating speed was proposed.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] T.Tsurumi: "Intrinsic Elastic, Dielectric and Piezoelectric Losses in PZT Ceramics Determined by Immittance-Fitting Method"J. Am. Ceram. Soc.. (in print). (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Domain Switching Properties in PZN-PT Single Crystals with Engineered Domain Configurations"Key Engineering Materials. 214-215. 9-14 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Dipolar Behavior in PZN Relaxor Single Crystal under Bias Field"Transaction of MRS-Japan. 26. 43-47 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Piezoelectric Properties of PZN-PT Single Crystal with Various Domain Structure"Transaction of MRS-Japan. 27. 255-258 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Domain Configurations of Ferroelectric Single Crystals and Their Piezoelectric Pronerties"Transaction of MRS-Japan. 26. 11-15 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Poling Treatment and Piezoelectric Properties of Potassium Niobate Ferroelectric Single Crystals"Jpn. J. Appl. Phys.. 40. 5690-5697 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Intrinsic Elastic, Dielectric and Piezoelectric Losses in PZT Ceramics Determined by Immittance-Fitting Method"J.Am. Ceram.Soc.. (in print). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Domain Switching Properties in PZN-PT Single Crystals with Engineered Domain Configurations"Key Engineering Materials. 214-215. 9-14 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Dipolar Behavior in PZN Relaxor Single Crystal under Bias Field"Transaction of MRS-Japan. 26. 43-47 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Piezoelectric Properties of PZN-PT Single Crystal with Various Domain Structure"Transaction of MRS-Japan. 27. 255-258 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Domain Configurations of Ferroelectric Single Crystals and Their Piezoelectric Properties"Transaction of MRS-Japan. 26. 11-15 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsurumi: "Poling Treatment and Piezoelectric Properties of Potassium Niobate Ferroelectric Single Crystals"Jpn. J. Appl. Phys.. 40. 5690-5697 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takaaki TSURUMI: "Dipolar Behavior in PZN Relaxor Single Crystal under Bias Field"Trans. Mater. Res. Soc. Jpn.. 25. 281-284 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Non-180 Degree Domain Contribution in the Dielectric and Piezoelectric Properties of Pb(Zn_<1/3>Nb_<2/3>)O_3-PbTiO_3 Single Crystals"Trans. Mater. Res. Soc. Jpn.. 25. 177-180 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "ドメイン構造を制御した強誘電体単結晶における巨大圧電効果の発現"セラミックデータブック2000. 28・82. 187-189 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Domain Configuration of Ferroelectric Single Crystals and Their Piezoelectric Properties"Trans. Mater. Res. Soc. Jpn.. 26・1. 11-14 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Domain Switching Properties of PZN-PT Single Crystals with Engineered Domain Configuration"Key Engineering Materials. 214-215. 9-14 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Intrinsic Elastic, Dielectric and Piezoelectric Losses in PZT Ceramics Determined by Immittance Fitting Method"J. Am. Ceram. Soc.. (in print). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Dipolar Behavior in PZN Relaxor Single Crystal under Bias Field"Trans. Mater. Res.Soc.Jpn.. 25. 281-284 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takaaki TSURUMI: "Non-180 Degree Domain Contribution in the Dielectric and Piezoelectric Properties of Pb(Zn_<1/3>Nb_<2/3>)O_3-PbTiO_3 Single Crystals"Trans. Mater. Res.Soc.Jpn.. 25. 177-180 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takaaki TSURUMI: "ドメイン構造を制御した強誘電体単結晶における巨大圧電効果の発現"セラミックデータブック2000. 28・82. 187-189 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Tsurumi,K.Okamoto and N.Ohashi: "Non-180゜ domain contribution to the properties of PZN-PT single crystals"Ext.Abs.9th U-Japan Seminar on Dielectric & Piezo.Ceram.. 91-94 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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