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Photo-Induced Structural Changes on Compound Semiconductor Surfaces

Research Project

Project/Area Number 11640314
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionOsaka City University (2000)
Nagoya University (1999)

Principal Investigator

KANASAKI Jun'ichi  Osaka City University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (80204535)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2000: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1999: ¥2,600,000 (Direct Cost: ¥2,600,000)
Keywordscompound semiconductor / surface / laser / photo-induced structural change / photo-induced desorption / Indium Phosphide / scanning tunneling microscopy / femtosecond non-resonant ionization spectroscopy / フェムト秒非共鳴イオン化分光 / 電子励起効果
Research Abstract

Structural changes and desorption of constituent atoms induced by ns-laser irradiations of cleaved InP (110)-(1x1) surface have been studied by means of scanning tunneling microscopy (STM) and high-sensitivity measurements of desorbed species using femtosecond non-resonant ionization spectroscopy. Atomic imaging of the irradiated surfaces has shown that efficient bond breaking of surface P atoms takes place via electronic processes upon a surface specific transition band on the surface, resulting formation of isolated vacancies at intrinsic P-sites. Repeated irradiations of the surface induces efficient growth of P vacancy-strings elongated selectively along In-P chains ([11^^-0] direction), demonstrating the preferential removal of atoms at neighboring sites of vacancies. The observed formation of vacancy strings with significantly enhanced yields than statistic values is possibly explained by efficient transfer along [11^^-0] direction and condensation of surface excited species. The … More efficiencies of bond breaking at intrinsic lattice sites and sites neighboring vacancies show non-linear increase with increasing excitation intensity, suggesting that non-linear process are included in the bond-breaking.
High sensitive measurements of desorbed species from InP (110)-(1x1) and (001)-(4x2) surfaces have shown that laser-induced bond breaking is accompanied with desorption of P, P_2 and In, the relative yields of which are strongly dependent on the surface structure. On the cleaved (110) surface, dominant desorbed species is P atom, yield of which decreases with increasing the number of laser shots on the same spot. Time-of-flight spectra of P-atoms acquired for various excitation intensities were divided into two components, fast and slow components, with the fluence-independent peak flight time and the velocity distribution. The fluence dependences of desorption yields for the fast and slow components are superlinear, and agree with those of the bond breaking efficiencies at intrinsic perfect P sites and at neighboring atomic sites of P-vacancies, respectively. Based on analyses of the non-linear efficiencies, we suggest that two-hole localization is included as a primary step of the electronic bond-breaking on this surface. Less

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] N.Itoh: "Laser-Induced Desorption from STM-Selected Semiconductor Sites"Progress in Surface Science. 61・1. 1-19 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 金崎順一: "半導体表面構造の光誘起変化と構成原子の脱離"固体物理. 34巻・8号. 657-668 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Tanimura: "Laser-Induced Electronic Bond Breaking and Structural Changes on Semiconductor Surfaces"Society of Photo-Optical Instrumentation Engineers (SPIE). 3618. 26-36 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Tanimura: "Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111)-(7x7) and InP (110)-(1x1)"Proceedings of the 25th International Conference on Physics of Semiconductors. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.Kanasaki: "Laser-Induced Electronic Desorption from Inp (110) Surfaces Studied by Femtosecond Non-Resonant Ionization Spectroscopy"Physical Review B. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.Kanasaki and K.Tanimura: "Photo-Induced Structural Changes of Semiconductor Surfaces and Desorption of Constituent Atoms (in Japanese)"Solid State Physics. Vol.34, no.8. 657-668 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Itoh, J.Kanasaki, and J.Xu: "Laser-Induced Desorption from STM-Selected Semiconductor Sites"Progress in Surface Science. Vol.61, no.1. 1-19 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Tanimura and J.Kanasaki: "Laser-Induced Electronic Bond Breaking and Structural Changes on Semiconductor Surfaces"SPIE. Vol.3618 (invited paper). 26-35 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Tanimura, J.Kanasaki, and K.Ishikawa: "Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111)-(7x7) and InP (110)-(1x1)"Proceedings of the 25^<th> International Conference on Physics of Semiconductors_.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.Kanasaki, N.Mikasa, and K.Tanimura: "Laser-Induced Electronic Desorption from InP Surfaces Studied by femtosecond Non-Resonant Ionization Spectroscopy"Physcal Review B.. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Itoh: "Laser-Induced Desorption from STM-Selected Semiconductor Sites"Progress in Surface Science. 61・1. 1-19 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 金崎順一: "半導体表面構造の光誘起変化と構成原子の脱離"固体物理. 34巻・8号. 657-668 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tanimura: "Laser-Induced Electronic Bond Breaking and Structural Changes on Semiconductor Surfaces"Society of Photo-Optical Instrumentation Engineers (SPIE). 3618. 26-36 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tanimura: "Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111) - (7x7) and InP (110) - (1x1)"Proceedings of the 25th International Conference on Physics of Semiconductors. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] J.Kanasaki: "Laser-Induced Electronic Desorption from InP (110) Surfaces Studied by Femtosecond Non-Resonant Ionization Spectroscopy"Physical Review B. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.Itoh: "Laser-Induced Desorpion from STM-Selected Semiconductor Sites"Progress in Surface Science. 61・1. 1-19 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 金さき順一: "半動体表面構造の光誘起変化と原子の脱離"固体物理. 34巻・8号. 657-668 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Tanimura: "Laser-Induced Electronic Bond Breaking and Structural Changes on Semiconductor Surfaces"Laser Applications in Microelectronic and Optoelectronic Manufacturing IV,Society of Photo-Optical Instrumentation Engineers(SPIE). 3618. 26-36 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2020-05-15  

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