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Optical properties of semiconductor nanostructures studied by in-stu optical spectroscopy in a transmission electron microscope.

Research Project

Project/Area Number 11640316
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionOsaka University

Principal Investigator

OHNO Yutaka  Osaka University, Graduate School of Science, Research Associate, 大学院・理学研究科, 助手 (80243129)

Co-Investigator(Kenkyū-buntansha) KOHNO Hideo  Osaka University, Graduate School of Science, Research Associate, 大学院・理学研究科, 助手 (00273574)
TAKEDA Seiji  Osaka University, Graduate School of Science, Professor, 大学院・理学研究科, 教授 (70163409)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1999: ¥2,900,000 (Direct Cost: ¥2,900,000)
Keywordsantiphase boundaries / silicon nanowire / quantum wells / GaInP / polarized spectroscopy / cathodoluminescence / transmission electron microscopy
Research Abstract

We have developed a new experimental method of transmission electronmicroscopy (TEM) combined with optical spectroscopy. Supported by the Grant-in-Aid, the apparatus for optical measurement has been much advanced, and is available for polarizing measurement. The polarization of light emitted from a small area of specimen, which is simultaneously observed by TEM, can now be analyzed. We have applied this advanced technique to study the light emitted from Cu-Pt type ordered GalnPsemiconductors. We have found that extended defects, so called antiphase boundary (APB) act as quantum wells which emits exitonic light due to interband transition. The key experimental data in this new finding is that we have determined convincingly that the light is well polarized according to the well structures.
We have also measured the light emitted from silicon nanowires that were grown by our own recipe of crystal growth. We have observed polarized light presumably due to quantum confinement, even though much qualitative studies is needed.
In conclusion, we have developed the new experimental technique, anddemonstrated that this is very much suitable for the studies on nanostructures and associated electronic structures. The techniques will be applied generally to various heterogeneous nanostructures which has gained much interest recently.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] Y.Ohno and S.Takeda: "Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope"11th International Conference on Microscopy of Semiconducting Materials. 164. 175-178 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP_2"Proceedings of Materials Research Society. 588. 105-110 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Ozaki,Y.Ohno, and S.Takeda: "Optical properties of Si nanowires on a Si(111) surface"Proceedings of Materials Research Society. 588. 99-103 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kuno,S.Takeda,M.Hirata,Y.Ohno,N.Hosoi and K.Shimoyama: "Formation model for microstructures in a (Al,GA,In)P natural superlattice"11th International Conference on Microscopy of Semiconducting Materials. 164. 287-290 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Takeda,Y.Kuno,N.Hosoi and K.Shimoyama: "Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP and(Al,Ga)InP2 epitaxial layers"J.Cryst.Growth. 205. 11-19 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno,Y.Kawai, and S.Takeda: "Vacancy-migration-mediated disordering in CuPt-ordered (Ga,In)P studied by in-situoptical spectroscopy in a transmission electron microscope"Physical Review. B59. 2694-2699 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno and S.Takeda: "Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope"11th International Conference on Microscopy of Semiconducting Materials. vol.164. 175-178 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP_2"Proceedings of Materials Research Society. vol.588. 105-110 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Ozaki, Y.Ohno, and S.Takeda: "Optical properties of Si nanowires on a Si {111} surface"Proceedings of Materials Research Society. vol.588. 99-103 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kuno, S.Takeda, M.Hirata, Y.Ohno, N.Hosoi and K.Shimoyama: "Formation model for microstructures in a (Al, GA, In) P natural superlattice"11th International Conference on Microscopy of Semiconducting Materials. vol.164. 287-290 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Takeda, Y.Kuno, N.Hosoi and K.Shimoyama: "Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP and (Al, Ga) InP2 epitaxial layers"J.Cryst.Growth. vol.205. 11-19 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno, Y.Kawai and S.Takeda: "Vacancy-migration-mediated disordering in CuPt-ordered (Ga, In) P studied by in-situoptical spectroscopy in a transmission electron microscope"Physical Review. vol.B59. 2694-2699 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GalnP_2"Proceedings of Materials Research Society. 588. 105-110 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Ohno and S.Takeda: "Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GalnP studied by optical spectroscopy in a transmission electron microscope"11th International Conterence on Microscopy of Semiconducting Materials. 164. 175-178 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.Ozaki,Y.Ohno,andS.Takeda S.Takeda: "Optical properties of Si nanowires on a Si (111) surface"Proceedings of Materials Research Society. 588. 99-103 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kuno,S.Takeda,M.Hirata,Y.Ohno,M.Hosoi and K.Shimoyama: "Formation model for microstructures in a (Al, GA, In) P natural superlattice"11th International Conterence on Microscopy of Semiconducting Materials. 164. 287-290 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries"Proceedings of Materials Research Society. (掲載受理). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Ozaki,Y.Ohno and S.Takeda: "Optical properties of Si nanowires on a Si{111} surface"Proceedings of Materials Research Society. (掲載受理). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Ohno and S.Takeda: "Opical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope"11th International Conference on Microscopy of Semiconducting Materials. (掲載受理). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2020-05-15  

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