| Project/Area Number |
11650003
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Utsunomiya University |
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Principal Investigator |
NAKAI Shun-ichi Faculty of Engineering, Utsunomiya University, Professor, 工学部, 教授 (70081429)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAZAKI Takafumi Mitsui Mining and Smelting Co. Ltd, Corporate R and D Center, Researcher, 総合研究所, 研究員
KASHIWAKURA Takayuki Faculty of Engineering, Utsunomiya University, Assistant, 工学部, 助手 (90261817)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2001: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1999: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | Soft X-ray emission spectra / inverse photoelectron / MnSi / Si interface / interface electronic structure / surface and interface / シリサイド / シリコン界面 / 逆光電子スペクトル / X線電子スペクトル / X線光電子スペクトル |
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| Research Abstract |
Recent development of electronic devices has been made in the field of interface such as MnSi/Si layer. In order to study the electronic properties of MnSi/Si interface, we have noticed the soft X-ray emission spectroscopy and the resonant inverse photoelectron spectroscopy.
At first, we have measured the Si-K_β emission spectra of Si single crystal. The K_β emission spectrum is induced by the Si 3p valence band to the Si 2p core hole transition. Measurements were carried out by electron excitation method and by changing the X-ray take-off angle (θ_t) from sample surface. When at θ_t = 2 °, SiK_β spectrum represents the Si 3p valence band structure of bulk Si. On the other hand, at θ_t = 0.5 °, which corresponds to the total reflection angle θ_c (critical angle) of X-rays, the Si-K_β spectrum shows the electronic structure of surface oxidized Si, i.e. SiO_2. Where θ_t is between above angles, at θ_t = 1 ° and, 1.5 °, the K_β spectra show the electronic structures of SiO_2/Si interface and the valence band Si3p peak shifts systematically to the lower energy. This peak shift may be understood by the band offset model of semiconductor heterojunction.
Next, we observed the Si-K_β spectra and the Mn L_α spectra from MnSi/Si system by changing the take-off angel θ_t.
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