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Investigation of the Novel Characteristics of Widebandgap Semiconductor Materials Grown by Multi-Phase Epitaxy

Research Project

Project/Area Number 11650005
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionWaseda University (2000)
Chiba University (1999)

Principal Investigator

KOBAYASHI Masakazu  Waseda University, Laboratory for Materials Science and Technology, Professor, 材料技術研究所, 教授 (10241936)

Co-Investigator(Kenkyū-buntansha) JIA Anwei  Chiba University, Faculty of Engineering, Research Associate, 工学部, 助手 (90280916)
松末 俊夫  千葉大学, 工学部, 講師 (20209547)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2000: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1999: ¥1,900,000 (Direct Cost: ¥1,900,000)
KeywordsMulti Phase Structures / ZnCdS / Molecular Beam Epitaxy / Hexagonal Structure Crystal / Cubic Structure Crystal / Theoretical Calculations / X-ray Diffraction / Doping
Research Abstract

Multi-phase structures were focused and the layer was grown by molecular beam epitaxy. Theoretical approach was also performed.
The structure was grown on the GaAs substrate which was a conventional material for the various device structures. ZnCdS was initially focused for the candidate of the multi-phase structure since both ZnS and CdS exhibit Zincblende structures as well as Wurtzite structures. The other advantage of this material is that the lattice matching between GaAs and ZnCdS is possible.
Other materials system lattice match to the InP substrate was also considered from the theoretical calculation.
1. The crystal structure of ZnCdS epilayers grown by MBE or by MOCVD can be tuned, and zincblende structures as well as wurtzite structures can be formed by changing the growth parameters.
2. The crystal structre can be controlled regardless of the substrate surface arrangement, namely (001), (111)A, and (111)B surfaces.
3. 4.5. X-ray phi-scan was proposed and shown that it was a simple and powerful technique to distinguish the two structures.
6.7. ZnCdMgOSSe was also considered as a multi-pahse structure materials which can be lattice match to InP.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] M.Kobayashi: "Luminescence properties of CdS quantum dots on ZnSe"J.Vac.Sci.Technol.. B17. 2005-2008 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Homoepitaxy of ZnSe on the citric acid etched(001)ZnSe surface"J.Cryst.Growth. 201/202. 474-476 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Growth of hexagonal ZnCdS on GaAs(111)Band(001)substrates by MBE"J.Cryst.Growth. 214/215. 192-195 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates"J.Cryst.Growth. 214/215. 1085-1088 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Luminescence properties of CdS quantum dots on ZnSe"J.Vac.Sci.Technol.B. 17. 2005-2008 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Homoepitaxy of ZnSe on the citric acid etched (001) ZnSe surface"J.Cryst.Growth. 201/202. 474-476 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Growth of hexagonal ZnCdS on GaAs (111)B and (001) substrates MBE"J.Cryst.Growth. 214/215. 192-195 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates"J.Cryst.Growth. 214/215. 1085-1088 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Kobayashi: "Growth of hexagonal ZnCdS on GaAs (111)B and (001) substrates by MBE"J.Cryst.Growth. 214/215. 192-195 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Kobayashi: "Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates"J.Cryst.Growth. 2l4/215. 1085-1088 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M. Kobayashi: "Luminescence properities of CdS quantum dots on ZnSe"J. Vac. Sci. Technol.. B17. 2005-2008 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M. Kobayashi: "Homoepitaxy of ZnSe on the citric acid etched (001) ZnSe Surface"J. Cryst. Growth. 201/202. 474-476 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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