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Study of enhancing carrier mobility using tensilely strained Si films

Research Project

Project/Area Number 11650010
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo Institute of Technology

Principal Investigator

YAMADA Akira  Tokyo Institute of Technology, Department of Physical Electronics, Associate Professor, 大学院・理工学研究科, 助教授 (40220363)

Co-Investigator(Kenkyū-buntansha) OKAMOTO Tamotsu  Tokyo Institute of Technology, Department of Physical Electronics, Research Associate, 大学院・理工学研究科, 助手 (80233378)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2000: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1999: ¥1,600,000 (Direct Cost: ¥1,600,000)
KeywordsGroup IV semiconductor / Low temperature Epitaxy / Strained / Hot Wire Cell method / Mobility / Plasma-CVD / Photo-CVD / Si / ホットワイヤーセル / 歪み
Research Abstract

Hot Wire (HW) Cell method was applied to grow epitaxial Si and strained Si_<1-y>C_y films at very low substrate temperature. In this method, the reactant gas was decomposed efficiently by HW and large amount of atomic hydrogen could be supplied to improve the crystallinity of Si films. The epitaxial Si films were grown on Si (100) at the substrate temperature (T_<sub>) of 150-250℃ and the pressure of 0.015-0.03Torr by using only SiH_4. The crystallinity of the films became amorphous or polycrystalline either at T_<sub> of over 300℃ or the pressure of over 0.06Torr. Carbon was introduced to the films by using C_2H_2 gas and the epitaxial growth at low T_<sub> was also possible by using hydrogen dilution. The hydrogen incorporation was observed in the epitaxial films at such low T_<sub>. The thermal annealing caused to desorb the hydrogen. Local vibration mode of C in Si network (607cm^<-1>) was detected in the annealed films by IR absorption and Raman scattering spectroscopy. The concentration of substitutional C was 0.9% when the ratio C_2H_2/SiH_4 was 0.01. Furthermore, X-ray reciprocal lattice mapping indicated the pseudomorphic growth of Si_<1-y>C_y alloy.
Plasma-CVD was also applied to grow strained Si_<1-y>C_y films. The highest substitutional C content of 3.5% was obtained in the films with SiH_2 (CH_3)_2 addition. In-situ phosphorus doping was carried out by using PH_3. The Si films, with and without C addition, were grown at the same PH_3/SiH_4 ratio of 0.03%. The electron concentration of Si_<1-y>C_y film was lower than that of Si film. However, the value was increased up to the same level of the Si film after annealing at 700℃, which was 5x10^<18>cm^<-3>. It means that the dopant neutralization occurred in the as-grown Si_<1-y>C_y films.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] T.Watahiki: "Low Temperature Epitaxial Growth of Si and Si_<1-y>C_y Films by Hot Wire Cell Method"Thin Solid Films. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Abe: "Characterization of Tensilely Strained Si_<1-y>C_y Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature"Jpn.J.Appl.Phys.. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys. 39・11A. L1078-L1080 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using Hot Wire Cell Method"J.Cryst.Growth. 209. 335-338 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Watahiki: "Low Temperature Epitaxial Growth of Si and Si_<1-y>C_y Films by Hot Wire Cell Method"Thin Solid Films. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Abe: "Characterization of Tensilely Strained Si_<1-y>C_y Alloy Grown by Photo-and Plasma Chemical Vapor Deposition at Very Low Temperature"Jpn.J.Appl.Phys.. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys.. 3911A. L1078-L1080

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using Hot Wire Cell Method"J.Cryst.Growth. 209. 335-338 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Watahiki: "Low Temperature Epitaxial Growth of Si and Si_<1-y>C_y Films by Hot Wire Cell Method"Thin Solid Films. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Abe: "Characterization of Tensiley Strained Si_<1-y>C_y Alloy Grown by Photo-and Plasma Chemical Vapor Deposition at Very Low Temperature"Jpn.J.Appl.Phys.. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Film by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys.. 39・11A. L1078-L1080 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using How Wire Cell Method"J. Cryst.Growth. 209. 335-338 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Watahiki: "New Approach to Low Temperature Si Epitaxy by using Hot Wire Cell Method"J.Crystal Growth. (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Abe: "Growth Mechanism during Si Epitaxy by Photo Chemical Vapor Deposition at Low Temperatures"Jpn.J.Appl.Phys.. 37. 3622-3627 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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