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GROWTH OF HIGH-DENSITY ARRAY AND FLUX OF QUQNTUM WIRES B,Y UTILIZING ATOMIC STEPS AND LATTICE STRAIN AND ELECTRON RELAXATION IN THE WIRES

Research Project

Project/Area Number 11650011
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionYAMANASHI UNIVERSITY

Principal Investigator

MATSUMOTO Takashi  Yamanashi Univ. Dept. of Electrical Eng. Professor, 工学部, 教授 (00020503)

Co-Investigator(Kenkyū-buntansha) KABETANI Yoichi  Yamanashi Univ. Dept. of Electrical Eng. Research Associate, 工学部, 助手 (30283196)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2001: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2000: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1999: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordsvicinal substrate / atomic step / quantum well / quantum wire / photoluminescence / MBE / transmission electron microscope / reflection electron diffraction / フェトルミネセンス / 電子回折 / 超格子 / 単一量子井戸 / 顕微フォトルミネセンス / 格子歪み
Research Abstract

ZnSe surface growing on GaAs(100) substrates vicinal toward [001] or [0-11] by 3, 5 or 7 degree was investigated with in-situ reflection high-energy electron diffraction. Diffraction patterns indicated 1 ML-height atomic steps with uniform terrace widths determined by the substrate vicinal angle. The observed diffraction patterns were compared with simulated patterns to discuss the uniformity of the atomic step structure. The step array on 50nm-thick ZnSe surface with 5° vicinal had a fluctuation less than 3ML in terrace width and a fluctuation longer than 60ML in linearity of step edges. The insertion of a 2ML-thick CdSe layer did not destroy the step-and-terrace structure.
The potential profile and quantum energy levels were calculated for ZnSe/CdSe/ZnSe strained single quantum wells grown GaAs vicinal substrates by an atomic scale calculation. Potential energies in the CdSe well at the step edges increased due to inhomogeneous strain for both electron and heavy hole. The amplitude of the potential modulation was 22meV for both conduction and valence bands.
ZnSe/(CdSe,ZnSe)/ZnSe single quantum well structures were grown on GaAs vicinal substrates with well-layer thicknesses of 28 ML. The well layer consisted of CdSe/ZnSe lateral superlattices. Digital analysis of lattice image revealed that CdSe well regions were embedded in ZnSe barrier region with a uniform interval and in an orientation determined by the substrate vicinal angle. Photoluminescence was found to be linearly-polarized with electric field parallel to the step edge.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] Y.Nabetani: "Potential profile and quantum energy level in ZnSe/CdSe/strained qantum well grown on vicinal GaAs substrate"J. Crystal Growth. 214/215. 665-667 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Nabetani: "Strain distribution around the step edge of ZnSe/CdSe/ZnSe strained quantum well grown on vicinal GaAs substrate"J. Crystal Growth. 214/215. 610-615 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Abe: "RHEED study of atomic steps on ZnSe surface grown on vicinal GaAs substrates"J. Crystal growth. 214/215. 595-601 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Nabetani: "Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate"J. Appl. Phys.. 89. 154-159 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Nabetani: "HRTEM observation of CdSe/ZnSe SQW grown on vicinal GaAs substrate"J. Crystal Growth. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Suzuki: "MBE growth of MnTe/ZnTe super lattices on GaAs(100) vicinal substrates"J. Crystal Growth. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Abe, M. Kanemaru, T. Egawa, Y. Nabetani, T. Kato, T. Matsumoto: "RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates"J. Crystal Growth. vol. 214/215. 595-601 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Nabetani, T. Kato, T. Matsumoto: "Strain distribution around the step edge of ZnSe/CdSe/ZnSe strained quantum well grown on vicinal GaAs substrate"J.Crystal Growty. vol. 214/215. 610-615 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Nabetani, T. Kato, T. Matsumoto: "Potential profile and quantum energy level in ZnSe/CdSe/ZnSe strained quantum well on vicinal GaAs substrate"J.Crvstal Growth. V0l. 214/215. 665-670 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Nabetani, T. Kato, T. Matsumoto: "Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate"J.Appl.Phys. vol. 89. 154-159 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Nabetani, Y. Kobayashi, Y. Ito, T. Kato, T. Matsumoto: "HRTEM observation ofCdSe/ZnSe SOW grown on vicinal GaAs substrate"Crystal Growth. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Suzuki, I. Ishibe, Y. Nabetani, T. Kato, T. Matsumoto: "MBE growth of MnTe/ZnTe superlattices on GaAs(1OO) vicinal substrates"Crystal Growth,. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Nabetani: "HRTEM observation of CdSe/ZnSe SQW grown on vicinal GaAs substrate"J.Crystal Growth. (印刷中).

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Suzuki: "MBE growth of MnTe/ZnTesuper lattices on GaAs(100)vicinal substrates"J.Crystal Growth. (印刷中).

    • Related Report
      2001 Annual Research Report
  • [Publications] Hiroshi ABE: "RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates"Journal of Crystal Growth. 214/215. 595-601 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Yoichi NABETANI: "Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrates"Journal of Applied Physics. 89・1. 154-159 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Hiroshi Abe: "RHEED Study of Atomic Steps on ZnSe Surface Growing on Vicinal GaAs Substrates"Journal of Crystal Growth. (印刷中). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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