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Light up-conversion effects of ZnSeTe strained superlattices

Research Project

Project/Area Number 11650022
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHokkaido Institute of Tecnology

Principal Investigator

IMAI Kazuaki  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (40001987)

Co-Investigator(Kenkyū-buntansha) SUZUKI Kazuhiko  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (30226500)
SAWADA Takayuki  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (40113568)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2001: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1999: ¥1,500,000 (Direct Cost: ¥1,500,000)
KeywordsMBE / II-VI semiconductors / superlattices / Light wavelenght conversion / ZnSeTe / 歪超格子 / MBE成長 / 光変調
Research Abstract

In this investigation, we grew the ZnSe-ZnTe strained superlattices with a dual subband (DSB) structure of [(7, 2)_6(2, 5)_1]_100. The structure and the mechanism of light up-conversion effect are analyzed by the HRXD, Raman scattering and measurements of excitation intensity dependences of PL spectra. The HRXD spectra indicate the satellite peaks of 0, ±1 and - 2 order of the part of (7, 2)_6. The diffraction peaks coincide with the result of calculated simulation. The Raman spectrum shows the ZnSe-like LO and the ZnTe-like LO phonon peaks, which means the sample consists of individual ZnTe layer. The PL spectra showed two peaks at 1.8 and 2.2 eV. The peak at 2.2 eV is from the part of (7, 2)_6 in the superlattice. In the previous investigation, the sample of the structure of [(2, 2)_<12>(2, 5)_3]_<30> indicated the PL peaks at 1.9 and 2.2 eV. It is cleared that we are able to control the photon energy of PL peaks by the structure of the DSB superlattices. The PL peak at 2.2 eV appeared also by excitation with the He-Ne laser, the energy of which is 1.96 eV, I.e., the laser light of 1.96 eV is converted to the light with the energy 2.2 eV (up-conversion). The dependence of the intensity of the 2.2 eV peak on the excitation intensity pointed out a non-linear relation. It is considered the mchanism of the up-conversion involves a step process of transition.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (33 results)

All Other

All Publications (33 results)

  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inaba: "Optical characterization of nuclear detector materials"phys. stat. sol. (b). 229. 601-604 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.Kimura, Y.Nakamura, K.Imai, T.Sawada, I.Tsubono: "Absorption properties of Langmuir-Blodgett films of retinoic acid"Mol. Cryst. and Liq. Cryst.. 371. 41-44 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Sasaki N.Takojima, N.Kimura, I.Tsubono, K.Suzuki, T.Sawada, K.Imai: "Electron-phonon coupling of deep emission In ZuSeTe alloy"J. Cryst. Growth. 227-228. 683-687 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inabe: "Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method"J. Electronic Materials. 30. 603-607 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Akimoto, M.Tamura, J.Ikeda, Y.Aoki, F.Fujita, K.Sato, A.Homna, T.Sawamura, M.Narita, K.Imai: "Generation and use of parametric X-rays with an electron linear accelerator"Nucl. Instrum. & Methods A. 459. 78-86 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Suzuki, S.Seto, A.Iwata, M.Bingo, T.Sawada, K.Imai: "Transport properties of undoped Cd_<0.9>Zn_<0.1>Te grown by high pressure Bridgman technique"J. Electronic Materials. 29. 704-707 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Yamagata, T. Sawada, K. Imai, K. Suzuki: "Potential barrier formed at n-ZnSe regrowth homointerface be MBE"J. Cryst. Growth. Vol. 201/202. 623-626 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, Y. Chikarayumi, I. Tsubono, N. Kimura, T. Sawada, K. Imai: "Up-conversion effects of ZnSe-ZnTe superlattices with modulated periodicity"J. Cryst Growth. Vol. 201/202. 477-480 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, K. Imai, T. Sawada, S. Seno: "Effect of compositional disorder on optical of Cd_<1-x>Zn_xTe"J. Elec. Mat. Vol. 28. 785-788 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Kimura, T. Matuo, K. Machida, K. Imai, T. Sawada, I, Tsubini: "Spectroscopic properties of retinoid molecules in Langmuir-Blodgett Films"Mol. Cryst. & Liq. Cryst. Vol. 337. 353-356 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sawada, M. Sawada, Y. Yamagata, K. Imai, K. Suzuki, H. Tomozawa: "Electrical properties of metal/n-GaN and PCVD-SiO_2/n-GaN interface"Inst. Phys. Conf. Ser. No. 162 : Chapter 13. 775-780 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, A. Iwata, S. Seno, T. Sawada, K. Imai: "Drift mobility measurements of undoped Cd_<0.9>Zn_<0.1>Te grown by high-pressure Bridgman technique"J. Cryst. Growth. Vol. 214/215. 909-912 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sawada, Y. Ito, K. Imai, K. Suzuki, H. Tomazawa, S. Sakai: "Electrical properties of metal/n-GaN and SiO_2/GaN interfaces and effects of themal annealing"Appl. Surface Sci.. Vol. 159-160. 449-455 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, S. Seto, A. Iwata, M. Bingo, T. Sawada, K. Imai: "Transport properties of undoped Cd_<0.9>Zn_<0.1> Te grown by high pressure Bridgman techinique"J. Electronic Materials. Vol. 29. 449-455 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sawada, Y. Ito, N. Kimura, K. Imai, K. Suzuki, S. Sakai: "Influence of Inhomogeneous barrier on I-V characteristics of metal/GaN Schottky diodes"Proc. Int'l. Workshop on Nitride Semiconductors. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Akimoto, M. Tamura, J. Aoki, F. Fujita, K. Sato, A. Honma, T. Sawamura, M. Narita, K. Imai: "Generation and use of parametric X-rays with an electron linear accelerator"Nucl. Instrum. & Methods A. Vol. 459. 78-86 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, S. Seno, T. Sawada, K. Imai, M. Adachi, K. Inabe: "Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method"J. Electronic Materials. Vol. 30. 603-607 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Sasaki, N. Takojima, N. Kimura, I. Tsubono, K. Suzuki, T. Sawada, K. Imai: "Electron-phonon coupling of deep emission In ZnSeTe alloy"J. Cryst. Growth. Vol.227-228. 683-687 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Kimura, Y. Nakamura, K. Imai, I. Tsubono: "Absorption properties of Langmuir-Blodgett films of retinoic acid"Mol. Cryst. and Liq. Cryst.. Vol. 371. 41-44 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, S. Seno, T. Sawada, K. Imai, M. Adachi, K. Inaba: "Optical characterization of nuclear detector materials"phys. stat. sol. (b). Vol. 229. 601-604 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inaba: "Optical characterization of nuclear detector materials"phys.stat.sol.(b). 229. 601-604 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Kimura, Y.Nakamura, K.Imai, T.Sawada, I.Tsubono: "Absorption properties of Langmuir-Blodgett films of retinoic acid"Mol.Cryst.and Liq.Cryst.. 371. 41-44 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Sasaki, N.Takojima, N.Kimura, I.Tsubono, K.Suzuki, T.Sawada, K.Imai: "Electron-phonon coupling of deep emission In ZnSeTe alloy"J.Cryst.Growth. 227-228. 683-687 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inabe: "Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method"J.Electronic Materials. 30. 603-607 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Akimoto, M.Tamura, J.Ikeda, Y.Aoki, F.Fujita, K.Sato, A.Honma, T.Sawamura, M.Narita, K.Imai: "Generation and use of parametric X-rays with an electron linear accelerator"Nucl.Instrum.& Methods A. 459. 78-86 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Suzuki, S.Seto, A.Iwata, M.Bingo, T.Sawada, K.Imai: "Transport properties of undoped Cd_<0.9>Zn_<0.1>Te grown by high pressure Bridgman technique"J.Electronic Materials. 29. 704-707 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Sawada et al.: "Electrical properties of metal/n-GaN and PCVD-SiO_2/n-GaN interface"Inst.Phys.Conf.Ser.No.162. Chapter 13. 775-780 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Suzuki et al.: "Driftmobility measurements of undoped Cd_<0.9>Zn_<0.1>Te grown by ……"J.Cryst.Growth. 214/215. 909-912 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Sawada et al.: "Electrical properties of metal/n-GaN and SiO_2/GaN interfaces and ……"Appl.Surface Sci.. 159-160. 449-455 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Suzuki et al.: "Transport properties of undoped Cd_<0.9>Zn_<0.1>Te grown by high pressure ……"J.Electron.Mater.. 29・6. 704-707 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Suzuki et al.: "Effect of compositional disorder on the optical properties of Cd_<1-x> ZnxT"J.Electronic Materials. 28・6. 785-788 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Watanabe at el.: "up-conversion effect of ZnSe-ZnTe superlattices with."J Cryst.Growth. Vol.201/202. 477-480 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Sawada et al.: "Electrical properties of Metal/n-GaN and..."Inst.Phys.Conf.Ser.. No.162 Chapt.13. 775-780 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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