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Atomic scale monitoring for epitaxial growth process of 3C-SiC on Si

Research Project

Project/Area Number 11650028
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionNagaoka University of Technology

Principal Investigator

YASUI Kanji  Nagaoka University of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (70126481)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2000: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1999: ¥3,200,000 (Direct Cost: ¥3,200,000)
Keywordscubic SiC / methylsilanes / RHEED / epitaxial growth / 水素ラジカル / 原子レベルモニター
Research Abstract

The objective of this project is to understand the reaction processes during the epitaxial growth of 3C-SiC on Si substrates using methylsilanes as source materials in order to realize the low temperature epitaxial growth of SiC with excellent properties.
In 1999, from the experiments of crystal growth by low-pressure CVD (LPCVD) and triode plasma CVD using monometylsilane (MMS) as a source gas, the epitaxial growth at 900℃ was successful by triode plasma CVD, while the epitaxial growth was successful at higher temperature than 950℃ by LPCVD.The activation energies of SiC growth were 70kcal/mol in LPCVD and 43kcal/mol in triode plasma CVD, respectively.
In 2000, to investigate the growth mechanism of SiC on Si (001) surface, the initial reaction process between dimethylsilane (DMS) and Si (2×1) surface was observed in-situ using reflection high-energy electron diffraction (RHEED). By the DMS supply after raising the substrate temperature to 650-750℃, 3C-SiC spots were observed after incu … More bation time. During the incubation time, Si c(4×4) surface reconstruction was observed. The Si c(4×4) reconstruction was considered to have been a result of the carbon atoms diffused to the Si substrate from adsorbed DMS molecules. The activation energy calculated from the Arrhenius plot of the time until the Si c(4×4) structure appeared was about 16kcal/mol. It was considered that the carbon atoms adsorbed DMS molecules diffused into the Si substrate and formed Si_xC_<1-x> alloys in order to relax the lattice mismatch between Si and SiC during incubation time. The activation energy calculated from the Arrhenius plot on the initial growth rate of SiC formation was about 45kcal/mol. This energy value was close to that of hydrogen desorption from Si surface. In this temperature region, hydrogen atoms of DMS molecules adsorbed on Si surface migrated to Si dangling bonds and thereafter desorbed from Si-H bonds. The hydrogen desorption process from Si surface is considered to be rate-limiting step.
Parallel to the above investigation, SiC epitaxial growth was carried out by LPCVD and triode plasma CVD using dimethylsilane as source gas. The activation energies for SiC growth were 90kcal/mol in. In the case of the SiC growth by triode plasma CVD, on the other hand, the activation energy for the epitaxial growth hardly depended on the source materials, i. e. between MMS and DMS. Less

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] Kanji Yasui: "Growth of high quality SiC films on Si by triode plasma CVD using monomethylsilane"Applied Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Epitaxial Growth of 3C-SiC Films on Si Substrates by Triode Plasma CVD Using dimethylsilane"Applied Surface Science. 159/160. 556-560 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Atomic Scale Monitoring for 3C-SiC Heteroepitaxial Growth on Si Using Organosilicon Compound"Proc.of Plasma Science Symposium 2001 and the 18^<th> Symposium on Plasma Processing. 627-628 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 前田智彦: "MMSiを用いたトライオードプラズマCVD法による3C-SiCの低温成長"電子情報通信学会技術研究報告. 1000,No-396. 21-26 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 成田克: "有機ケイ素化合物と水素を用いたβ-SiC成長初期過程、"電子情報通信学会エレクトロニクスソサィエティ大会講演論文集2. 22 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 成田克: "DMSを用いたSiCエピタキシャル成長の初期過程、"第9回SiC及び関連ワイドギャップ半導体研究会予稿集. 25 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Growth of high quality SiC films on Si by triode plasma CVD using monomethylsilane"Appl.Surf.Sci.. (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane"Appl.Surf.Sci.. Vol.159/160. 556-560 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Atomic Scale Monitoring for 3C-SiC Heteroepitaxial Growth on Si Using Organosilicon Compound"Proc.Plasma Sci.Symp. 2001 and 18^<th> Symp.on Plasma Processing. 627-628 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Tomohiko Maeda: "Low-temperature epitaxial growth of 3C-SiC by triode plasma CVD using monomethylsilane"Technical Report of IEICE. CPM2000-130. 21-26 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Yuzuru Narita: "Initial growth stage of β-SiC using organosilicon compound and hydrogen"Proc.2000 Electro.Soc.Conf.of IEICE. Vol.2. 22 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Yuzuru Narita: "Initial growth stage of β-SiC using dimethylsilane"Proc.9^<th> Meeting on SiC and related Wide Bandgap Semiconductors. 25 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kanji Yasui: "Growth of high quality SiC films on Si by triode plasma CVD using monomethylsilane"Applied Surface Science. (in press). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Kanji Yasui: "Epitaxial Growth of 3C-SiC Films on Si Substrates by Triode Plasma CVD Using dimethylsilane"Applied Surface Science. 159/160. 556-560 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Kanji Yasui: "Atomic Scale Monitoring for 3C-SiC Heteroepitaxial Growth on Si Using Organosilicon Compound"Proc.of Plasma Science Symposium 2001 and the 18^<th> Symposium on Plasma Processing. 627-628 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 前田智彦: "MMSiを用いたトライオードプラズマCVD法による3C-SiCの低温成長"電子情報通信学会技術研究報告. 100・396. 21-26 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 成田克: "有機ケイ素化合物と水素を用いたβ-SiC成長初期過程"電子情報通信学会エレクトロニクスソサィエティ大会講演論文集2. 22 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 成田克: "DMSを用いたSiCエピタキシャル成長の初期過程"第9回SiC及び関連ワイドギャップ半導体研究会予稿集. 25 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 前田智彦: "トライオードプラズマCVD法によるモノメチルシランを用いたSiCエピタキオシャル成長"第47回応用物理学関係連合講演会予稿. 31pZL-7/II (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Kanji YASUI: "Epitaxial Growth of SiC Films by Triode Plasma CVD Using Monomethylsilane"Proceedings of the 17th Symposium on Plasma Processing. 335-338 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 安井寛治: "有機ケイ素化合物を用いた減圧CVD法によるAlN上SiCのエピタキシャル成長"電子情報通信学会技術研究報告[電子部品・材料]. 99・361. 89-94 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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