| Project/Area Number |
11650033
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
MINAMI Tadatsugu Kanazawa Institute of Technology, Engineering, Professor, 工学部, 教授 (70113032)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro Kanazawa Institute of Technology, Engineering, Associate Professor, 工学部, 助教授 (30257448)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1999: ¥2,400,000 (Direct Cost: ¥2,400,000)
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| Keywords | Multuicomponent / Oxide / Transparent and Conducting Thin film / Magnetron Sputtering / co-doping |
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| Research Abstract |
Transparent and conductive thin films using new multicomponent oxides consisting of a combination of different binary and ternary compounds have been prepared by r.f. or d.c. magnetron sputtering. Transparent and conductive Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> thin films were prepared over the whole range of compositions in these multicomponent oxides. The electrical, optical, crystaloographcal and chemical properties of these multicomponent thin films were investigated. It was achieved that the electrical and chemical properties of the resulting multicomponent thin films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent thin films ranged between the properties of the two ternary compound films. As an extension of our previous work, we propose the use of impurity-co-doped oxides for transparent conducting films. For example, Highly transparent and conductive Zn-co-doped ITO (ITO : Zn) thin films were prepared with a Zn content of 0 to 34.1 at% by conventional d.c. magnetron sputtering. A resistivity of 2-3X10^<-4> Ωcm was obtained in ITO : Zn films prepared under optimized conditions with a Zn content of 0-28ar%. The etching rate of ITO : Zn films in a HCl solution could be controlled by the Zn content in the films ; ITO : Zn films prepared with a Zn content of 7.6-34.1 at% wer easily etched in a 1.0 M HCl solution.
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