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Magneto-transport property of FeSe thin films prepared by selenization technique

Research Project

Project/Area Number 11650318
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionYokohama National University

Principal Investigator

TAKEMURA Yasushi  Yokohama National University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30251763)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2000: ¥1,100,000 (Direct Cost: ¥1,100,000)
KeywordsFeScthin film / magnetic thin film / magneto-tranport property
Research Abstract

Magneto-transport and structural properties of FeSe thin films prepared on GaAs substrates by selenization technique were studied.
(1) Fe_2Se_3/Fe/GaAs structures were prepared by a selenization of Fe films on GaAs (001) substrate. The selenization is not a deposition process, but replacing Fe atoms by Se atoms supplied as molecular beams from K-cell. The substrate temperature was 400℃ and Se beam pressure was 4×10^<-8> Torr. Fe_2Se_3 compound, which was different from bulk stable structures of Fe_3Se_4 and Fe_7Se_8, was obtained by this technique.
(2) From the resistivity and Hall effect measurements, it was found that the resistivity of FeSe thin film was ρ=1.1×10^<-4> Ωm, and carrier (electron) density was n=2.1×10^<23> m^<-3>. At the relatively low field region of the applied external magnetic field in Hall effect measurement, Hall resistivity exhibited similar to the extraordinary Hall effect which was observed in typical ferromagnetic materials. Details on magneto-transport property including anisotropic feature due to the crystal structure are followed.
(3) From the x-ray reciprocal space mapping measured by 2theta(omega)-psi scan, it was found that the crystal structure of Fe_2Se_3 is cubic with a=0.551 nm by fitting the Fe_2Se_3 reflections. The cubic structure of Fe_2Se_3 was easily understood by the positions of Fe_2Se_3 reflections which locate at slightly lower 2theta angles than GaAs reflections. Both of Fe_2Se_3 (022) and (113) reflections which belong to different reflection planes in the reciprocal space were detected simultaneously. This indicated that Fe_2Se_3 cubes are not oriented in-plane direction of the layer.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] Y.Takemura: "Formation of Fe vacancies and crystal structure of Fe_2Se_3/Fe thin films on GaAs substrates"Abstracts of 44th Annual Conference on magnetism & magretic materials. 221 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Takemura: "X-ray reciprocal space mapping of Fe_2Se_3 films prepared on GaAs substrates by Selenization technique"Abstracts of 8th Joint MMM-Intermag Conference. 251 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Takemura: "Formation of Fe vacancies and crystal structure of Fe2Se3/Fe thin films on GaAs substrate"Abstracts of 44th Annual Conference on Magnetisun & Magnetic Materials. 221 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Takemura: "X-ray reciprocal space mapping of Fe2Se3 films prepared on GaAs substrates by selenization technique"Abstracts of 8^<th> Joint MMM-Intermag Conference. 251 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Tabemura 他: "Formation of Fe Vacancies and crystal structure of Fe_2Se_3/Fe thin films on GaAs substrates"Abstracts of 44th Annual Conference on Magnetism 2 magnetic materials. 221 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Tabemura 他: "X-ray reciprocal space mapping of Fe_2Se_3 films prepared on GaAs substrates by selenization technique"Abstracts of 8th Joint MMM-Intermag Conference. 251 (2001)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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