Evaluation of 2D Dopant Profile around source and drain of MOSFETs
| Project/Area Number |
11650326
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hiroshima University |
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Principal Investigator |
SHIBAHARA Kentaro Hiroshima University, Research Center for Nanodevices and Systems, Associate Professor, ナノデバイス・システム研究センター, 助教授 (50274139)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOYAMA Shin Hiroshima University, Research Center for Nanodevices and Systems, Professor, ナノデバイス・システム研究センター, 教授 (80144880)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2000: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1999: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | silicon / Dopant / 2D profile / SEM / SIMS |
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| Research Abstract |
We have investigated evaluation of 2D profiling of dopants around the source and drain of silicon MOSFETs. For one-dimensional, in other words depth, pro filing SIMS (Secondary Ion Mass Spectroscopy) is most widely used. We have proposed the new method to extract 2D dopant distribution that utilizes SIMS. Implanted ions are scattered and laterally spread. When the mask opening width becomes narrower than the lateral spread due to the scattering, effective dose reduces.
Based on this phenomena, we can obtain the relationship between the mask opening and the effective dose by SIMS measurement. By assuming adequate distribution function for the lateral spread, 2D profiles can be obtained. To confirm this idea, we have fabricated specimens with poly-Silicon or photoresist as the implantation mask for B implantation. By the SIMS evaluation, we have found that the aspect ratio of the mask opening must be enlarged to extract the profile. We also tried profiling with SEM (Scanning Electron Microscopy). This method is based on the variation in secondary electron emissivity due to the doping density. To improve spatial resolution, the specimens were polished with low angle, however, damage probably due to the polishing prevented obtaining clear SEM image. Though chemical etching to remove this damage was performed, the SEM image with good quality like a cleaved face has not been obtained.
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Report
(3 results)
Research Products
(4 results)
