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Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEIC

Research Project

Project/Area Number 11650336
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka Instizute of Technology

Principal Investigator

YODO Tokuo  Osaka Institute of Technology, Electronic Engineering, Associated Professor, 工学部, 助教授 (70288752)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1999: ¥2,500,000 (Direct Cost: ¥2,500,000)
KeywordsOEIC / ECR plasma / As doping / galium nitride / InGaAsN alloy / lattice matching / GaAsN alloy / Crystal structure / 結晶性 / シリコン基板上窒化ガリウム / シリコン基板表面 / プラズマダメージ / エピタキシャル成長 / 立方晶窒化ガリウム / 窒化ガリウムインジウム砒素
Research Abstract

In this research, we tried to grow epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy on nominal Si(001) and Si(111) substrates using ECR-MBE method. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) on Si with lattice matching is estimated to be about 0.2. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (y≠0) on Si with lattice matching is expected to be less than 0.2. Therefore, The crystal growth of In_XGa_<1-X>As_YN_<1-Y> alloy with good crystalline quality would be possible and well-matched with lattice constant of Si. However, the crystalline quality and crystal structure of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) are strongly dependent on the quantity of As-doping. The crystal structure has a zincblende type in light doping of As impurity while the crystal structure has a hexagonal type and the crystalline quality is greatly deteriorated in heavy doping. Moreover, the inert nitrogen molecules during ECR plasma obstructs the growth of GaN and drastically lowers the growth rates of GaN epitaxial layers. We have investigated whether this obstruction phenomenon occurs even in epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy (x and y≠0) or not at present.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] T.YODO,H.ANDO,H.TSUCHIYA,D.NOSEI,M.SHIMENO,Y.HARADA,M.FURUSAWA and M.YoSHIMOTO: "Influence of Inert Molecules,Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"Proc.Int.Workshop on Nitride Semiconductors,IPAP Conf.. Series1. 351-354 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yodo,H.Ando,H.Tsuchiya,D.Nosei,M.Shimeno,Y.Harada,M.Furusawa and M.Yoshimoto: "Influence of Inert Molecules,Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates bar Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"International Workshop on Nitride Semiconductors -IWN2000-,Technical Digest. PTD-01. 251-251 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.YODO,H.Ando,H.Tsuchiya,D.Nosei,M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on Molecular Beam Epitaxy, Abstract Book. P.3.16. 470-471 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yodo: "Model of Crystal Lattice Strained Along the Preferential Direction by Anisotropic Stress for GaAs Heteroepitaxial Films grown on Vicinal Si(001) and Si(110) Substrates by Molecular-Beam Epitaxy"J.Vac.Sci.Technol. A19・1. 287-291 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Tokuo YODO,Hironori TSUCHIYA,Hironori ANDO and Yoshiyuki HARADA: "Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance"Jpn.J.Appl.Phys.. 39・5A. 2523-2529 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Tokuo Yodo,Masaaki Toyama,Yasuyuki Imai and Hideki Shirasawa: "Influences of off-angle and off-direction, of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110) substrates by molecular-beam epitaxy"J.Cryst.Growth. 209. 724-733 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.YODO, H.ANDO, H.TSUCHIYA, D.NOSEI, M.SHIMENO, Y.HARADA, M.FURUSAWA and M.YOSHIMOTO: "Influence of Inert Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"Proc.Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 351-354 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yodo, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno, Y.Harada, M.Furusawa and M.Yoshimoto: "Influence of Inert Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"International Workshop on Nitride Semiconductors - IWN2000-, Technical Digest PTD-01 Nagoya, Japan. 251 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.YODO, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on Molecular Beam Epitaxy, Abstrack Book Beijing, China. 470-471 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yodo: "Model of Crystal Lattice Strained Along the Preferential Direction by Anisotropic Stress for GaAs Heteroepitaxial Films grown on Vicinal Si(001) and Si(110) Substrates by Molecular-Beam Epitaxy"J.Vac.Sci.Technol. A19 (1). 287-291 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Tokuo YODO, Hironori TSUCHIYA, Hironori ANDO and Yoshiyuki HARADA: "Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance"Jpn.J.Appl.Phys. 39. 2523-2529 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Tokuo Yodo, Masaaki Toyama, Yasuyuki Imai and Hidcki Shirasawa: "Influences of off-angle and off-direction, of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110) substrates by molecular-beam epitaxy"J.Cryst.Growth. 209. 724-733 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.YODO,H.ANDO,H.TSUCHIYA,D.NOSEI,M.SHIMENO,Y.HARADA,M.FURUSAWA and M.YOSHIMOTO: "Influence of Inert Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"Proc.Int.Workshop on Nitride Semiconductors, IPAP Conf.. Series 1. 351-354 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yodo,H.Ando,H.Tsuchiya,D.Nosei,M.Shimeno,Y.Harada,M.Furusawa and M.Yoshimoto: "Influence of Inert Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(110) substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Reasonance"International Workshop on Nitride Semiconductors-IWN2000-, Technical Digest. PTD-01. 251-251 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.YODO,H.Ando,H.Tsuchiya,D.Nosei,M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on Molecular Beam Epitaxy, Abstract Book. P.3.16. 470-471 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yodo: "Model of Crystal Lattice Strained Along the Preferential Direction by Anisotropic Stress for GaAs Heteroepitaxial Films grown on Vicinal Si(001) and Si(110) Substrates by Molecular-Beam Epitaxy"J.Vac.Sci.Technol. A19・1. 287-291 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Tokuo YODO,Hironori TSUCHIYA,Hironori ANDO and Yoshiyuki HARADA: "Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance"Jpn.J.Appl.Phys. 39・5A. 2523-2529 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Tokuo Yodo,Masaaki Toyama,Yasuyuki Imai and Hideki Shirasawa: "Influences of off-angle and off-direction, of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110) substrates by molecular-beam epitaxy"J.Cryst.Growth. 209. 724-733 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yodo,H.Ando,H.Tsuchiya,Y.Harada and M.Yoshimoto: "Dependence of flow rate of nitrogen gas on crystal structure of GaN films grown on Si(001)substrates by molecular beam epitaxy using nitrogen plasma assisted by electron cyclotron resonance"18th Electric Materials Symposium Record. 18巻. 119-122 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Tokuo Yodo,Masaaki Toyama,Yasuyuki Imai and Hideki Shirasawa: "Influences of off-angle and off direction of substrate on crystalline on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110)substrated by molecular beam epitaxy"J.Cryst.Growth(to be published). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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