| Project/Area Number |
11650338
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tohoku University |
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Principal Investigator |
SHIMAWAKI Hidetaka Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (80241587)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Nobuyuki Research Institute of Electrical Communication, Tohoku University, Resarch Associate, 電気通信研究所, 助手 (10178759)
YOKOO Kuniyoshi Research Institute of Electrical Communication, Tohoku University, Professor, 電気通信研究所, 教授 (60005428)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2000: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1999: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | cold cathode / field emission / electro-optics / modurated field emission / vacuum microelectronics / photo-excited field emission |
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| Research Abstract |
The generation of moduration electron beam at the frequency renges from microwave to teraherz wave provides a highly efficient, frequency tunable, midium power and compact electro-magnetic wave sources at the frequencies. A semiconductor FEA produces excess emission current by photo-excitation due to generation of electron-hole pair in the semiconductor emitter tips. Then, a moduration beam over terahertz frequency is produced by photo-excitation of femtosecond laser pulses and two continuous and frequency-offset pump laser.
We fabricated p-type Si FEA and examined the emission characteristics. It was verified that the emissioncurrent was saturated by the limitation of the minority carrier density in the p-type substrate and the current stabirity in the saturation ragion was less than 10% of average emission current. Additionally, the emission current from p-type Si FEA was controlled by the laser intensity and the temperature of the substrate due to generation of electron-hole pair in the semiconductor emitter tips.
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