| Project/Area Number |
11650344
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
YASUNAGA Hitoshi (2000) The University of Electro-Communications, Faculty of Electro-Communications, Professor, 電気通信学部, 教授 (40017330)
呉 南健 (1999) 電気通信大学, 電気通信学部, 助教授 (00250481)
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| Co-Investigator(Kenkyū-buntansha) |
SAKAMOTO Katsuyoshi The University of Electro-Communications, Faculty of Electro-Communications, Assistant, 電気通信学部, 助手 (20251704)
安永 均 電気通信大学, 電気通信学部, 教授 (40017330)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1999: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | Schottky diode / anodic oxidization / self-organization / atomic force microscope / GaAs / テラヘルツ / ダイオード / ショットキー |
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| Research Abstract |
On electrochemical anodic oxidization uniform Al thin film can be self-organized to insulating film with a honeycomb-array of pinhole. The main theme of this study is to prepare a nanometer scaled GaAs Schottky diode using the insulating film as a mask.
Prior to the preparation of target mask, the anodic oxidization of bulk Al was investigated with use of 0.5 M oxalic acid. From the atomic force microscope observation the honeycomb array of pinhole was evidently formed under a certain condition. Based on the condition similar anodic oxidization was made for Al thin film on GaAs. As a result a self-organized honeycomb array of pinhole was successfully prepared with a diameter of the pinhole of 30 to 50 nm and a distance between neighboring pinholes of 50 to 80 nm.
In the course of another study it is observed that an array of nanometer-scaled Schottky diode was formed in the self-organized manner for the case of In on Si(310). This was done with no anodic oxidization but In evaporation to clean Si(310) surface followed annealing in UHV.
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