| Project/Area Number |
11650348
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | NARA INSTITUTE OF SCIENCE AND TECHNOLOGY |
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Principal Investigator |
OHTA Jun Graduate School of Materials Science, NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Associate Professor, 物質創成科学研究科, 助教授 (80304161)
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| Co-Investigator(Kenkyū-buntansha) |
TOKUDA Takashi Grduate School of Materials Science, NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Instructor, 物質創成科学研究科, 助手 (50314539)
NUNOSHITA Masahiro Grduate School of Materials Science, NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Professor, 物質創成科学研究科, 教授 (70304160)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2000: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1999: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | vision chips / CMOS image sensor / non-accumulation / modulation light / demodulation / asynchronous mode / フォトゲート / イメージセンサ |
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| Research Abstract |
In the first year we have studied a vision chip based on non-accumulation mode and its application. First of all we have evaluated photo-transistors, which are essential devices to non-accumulation mode. Next by using the non-accumulation mode we have proposed a vision chip which can take image without being affected by surrounding illumination. This chip can extract only modulated signals from reflected light signals. The simulation results have showed a proper operation. The proposed chip consists of photo-sensing part, a demodulation circuit, an averaging circuit, and a sensitivity correction circuit. To detect a small modulated signals on a strong background illumination, Darlington connected photo-transistors have been employed due to their high gain. To suppress the non-uniform gain we have introduced a sensitivity correction circuit. We have designed the circuits and demonstrated their effectiveness by HSPCIE simulation.
In the second year we have studied on high performance of photo-sensing circuit. Floating diffusion has been used to improve the sensitivity and suppress the noise. Standard CMOS fabrication process has been applied to make two types of sensor chip ; photo-gate type and photodiode type. The used process is 0.35μm double poly double metal CMOS.We have preliminary showed the fundamental characteristics of photo-gate type sensor.
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