| Project/Area Number |
11650354
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Kogakuin University |
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Principal Investigator |
KAWANISHI Hideo Kogakuin University, Electronic Engineering, Professor, 工学部, 教授 (70016658)
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| Co-Investigator(Kenkyū-buntansha) |
HONDA Tohru Kogakuin University, Electronic Engineering, Assistant Professor, 工学部, 助教授 (20251671)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2000: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1999: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | GaN / Hetero epitaxy / Optical electrical integrated circuit / Strain control / Multi buffer layer |
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| Research Abstract |
In this research, fundamental discussion was done on the Si/GaN-hetero junction for photonics and electronic device integration on the Si substrate. Most important issue to be solved was how control the residual strain on the hetero-interface between Si and GaN semiconductors, and how reduce the defect on the epitaxial layer. The residual strain on the hetero-interface is originated in difference of a lattice constant and a thermal expansion coefficient of the hetero-junction material.
For this purpose, "Multi-Buffer Layer Structure (Super Lattice Structure)" was proposed for the control of the residual strain. This new technique was proposed as a Patent (in Japan). As a results, higher quality of GaN and GaInN epitaxial layer as these grown on SiC substrate could be grown on the Si substrate. And blue to green spectral region LEDs were fabricated on the Si substrate using the "Multi-Buffer Layer Structure".
This new technique has also potential to reduce the dislocation density, especially, screw-dislocation and mixed dislocation. Etch-Pit-Density (EPD) in the epitaxial layer gown on the Si substrate using the Multi-Buffer Layer Structure. As a results, the EPD of the epitaxial layer could be reduced from 10^9〜10^<10> [1/cm^3] to 10^6〜10^7 [1/cm^3].
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