Harmless Disposal System of NF3 in the Manufacturing Process of Semiconductor Using Chemical Reaction
| Project/Area Number |
11650788
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
化学工学一般
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| Research Institution | Kansai University |
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Principal Investigator |
YAMAMOTO Hideki Kansai Univ., Faculty of Eng., Associate Professor, 工学部, 助教授 (30174808)
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| Co-Investigator(Kenkyū-buntansha) |
SHIBATA Junji Kansai Univ., Faculty of Eng., Professor, 工学部, 教授 (70067742)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1999: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | environmental protection / global warming gases / harmless disposal / semiconductor / etching gas / fluoride gas / nitrogen fluoride / metal chloride / 特殊ガス / 無害化 / 半導体製造 / 三フッ化窒素 / 塩化カルシウム / 化学反応 / フッ化カルシウム / 温室効果 |
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| Research Abstract |
The chemical reactions of fluoride gases with metal chloride or metal oxide are utilized as an effective treatment for harmless disposal. These chemical reactions can be adopted in the temperature range of 80℃〜400℃, which is lower than that in the combustion treatment (800℃). Reaction products are metal fluoride or metal chloride which are a harmless and a valuable chemical material as one of new resources. This paper concerns with a new harmless disposal treatment of toxic global warming gases.
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Report
(3 results)
Research Products
(9 results)
