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Dissolution and Growth of InGaSb Ternary Semiconductor under Microgravity

Research Project

Project/Area Number 11694144
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionShizuoka University

Principal Investigator

KUMAGAWA Masashi  Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (30022130)

Co-Investigator(Kenkyū-buntansha) HAYAKAWA Yasuhiro  Shizuoka University, Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (00115453)
YAMAGUCHI Tomuo  Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (40010938)
HIRATA Akira  Waseda University, Faculty of Science and Technology, Professor, 理工学部, 教授 (00063610)
OZAWA Tetsuo  Shizuoka Institute of Science and Technology, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (90247578)
OKANO Yasunori  Shizuoka University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (90204007)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2001: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 2000: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 1999: ¥3,100,000 (Direct Cost: ¥3,100,000)
Keywordsmicrogravity / compound semiconductor / GaSb / InSb / InGaSb / uni-directional solidification / drop experiment / numerical simulation / 航空機実験 / ガリウムアンチモン / インディウムガリウムアンチモン / 重力変動
Research Abstract

We have conducted different types of experiments to obtain information on dissolution and growth of InGaSb ternary semiconductor under microgravity and on earth.
(1) The microgravity experiment performed in the Chinese recoverable satellite and the reference experiment on earth.
(a) the Ga compositional profile of the space-processed sample was uniform in the radial direction, and the interfaces were almost parallel. On the contrary, the larger amount of Ga composition was incorporated in the upper region of the earth-processed sample, and the dissolved zone broadened towards gravitational direction. Numerical simulation results suggested that the GaSb compositional profile in the solution and solution/crystal interface was significantly affected by solutal convection due to compositional difference ; (b) the GaSb with the (111)B plane dissolved into the InSb melt much more than that with the (111)A plane.
(2) Experiments performed using an airplane,
Crystallization studies were done at a … More reduced gravity level of 10^<-2>G using an airplane (flying in a parabolic trajectory) and at normal gravity conditions on earth. During the crystallization of InGaSb under reduced gravity, there were many needle crystals formed. Though different sizes of these needle crystals formed, most of these crystals were relatively large sized. At the same time, most of the needle crystals resulted during the crystallization process done on earth were considerably smaller in size when compared with the crystals resulted in the reduced gravity condition.
(3) Experiments using a drop tower,
(a) During the crystallization of InGaSb, many spherical projections were observed on the surface of the sample. The projections emerged out during the crystallization of InGaSb from its melt due to the reason that the density of InGaSb liquid is larger than that of solid.
(b) The observed projections were found to be similar to the projections observed in the melting and solidification experiment on In/GaSb/Sb done in IML-2. The projections formed under microgravity were almost spherical, whereas, the projection formed under normal gravity was not perfectly spherical. Due to gravitational pull, the top surface of the projection tended to become flat. This showed the influence of gravity on the formation of projections.
(c) The In composition of the crystallized InGaSb varied depending on the existing temperature at the time of formation. This was in accordance with the InSb-GaSb ternary phase diagram.
(4) Uni-directional solidification under a temperature gradient
(a) When the Seed temperature, the heating rate, the holding period, and the cooling rate were fixed at 648 ℃, 20 ℃/min, 40 h, and 0.5 ℃/min, respectively, the length of the crystal portion with uniform In compositional ratio became longer as the temperature was increased from 1.3 ℃/cm to 9.8 ℃/cm.
(b) The crystal length with uniform In compositional ratio became longer with the decrease of cooling rate and the initial In compositions.
(c) The dissolved area decreased with the increase of heating rate.
(d) The shapes of the dissolved region depend on the gravitational direction. They were perpendicular against the gravitational direction for the horizontal furnace, and broadened towards the gravitational direction in the case of the vertical furnace and the inclined furnace.
(5) Numerical simulation on solute transportation as functions of gravity level and g-jitter.
Numerical simulations on the flow and compositional distribution in the solution were performed as the analytical backup for the experimental studies.
(a) Under zero gravity, as there is no flow, dissolved GaSb diffuses from the interface towards a region far from the interface in the solution. This brings about the compositional gradient along the axial direction in the solution, but the Ga composition is uniform along the radial direction. Therefore, the dissolution of GaSb takes place uniformly at the interface. This results in the flat interface. On the contrary, under normal gravity, the Ga composition is not homogeneous in the radial direction. From the stream lines, it can be understood that a high velocity region exists near the solid-liquid interface. This is because a large amount of Ga-rich solution moves to the upper region due to buoyancy as the density of liquid GaSb (6.01 g/cm^3) is smaller than that of liquid InSb (6.32 g/cm^3). This concentrational gradient becomes a driving force of flow at the interface. At the solid-liquid interface, the dissolution of GaSb in the upper region is suppressed as large amount of Ga composition exists in the upper region of the solution. On the other hand, in the lower region of the solution, a large amount of In composition exists. This increases the dissolution of GaSb into the solution to satisfy the binary InSb-GaSb phase diagram. As a result, the shape of solid-liquid interface broadens towards the bottom. These numerical results can qualitatively explain the experimental results.
(b) The flow vector becomes smaller as the gravity level decreases. The shape of the interface becomes parallel with the decrease of gravity levels. With the increase of heating rate in the furnace, the dissolved amount decreases.
(c) The effect of g-jitter on the convection increases as the frequency decreases.
(d) Thermal Marangoni convection enhances the melting near the free surface under both normal and zero gravity conditions. Under the normal gravity field, the contribution of the solutal Marangoni convection to the flow is less than that of the thermal Marangoni convection because of gravitational segregation. Under zero gravity filed, the inteface shape is greatly affected by both the presence of thermal and solutal Marangoni convections. Less

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (116 results)

All Other

All Publications (116 results)

  • [Publications] T.KIMURA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Dependence of Dissolution and Growth Processes of Compound Semiconductors on Crystal Surface Orientation"The Japan Society of Microgravity Application. 15. 472-475 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Simulation of Ocillatory Flow in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method"Int. J. Numerical Modeling. 11. 289-298 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.BALAKRISHNAN, Y.HAYAKAWA, M.KUMAGAWA et al.: "Preparatory Terrestrial Growth of InGaSb for the Crystallization in Space"Proc. Joint International Conference on Advanced Science and Technology. 213-216 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.SHIBATA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Preliminary Experiments of InGaSb Growth in the Space Station"Proc. 50^<th> International Astronautical Congress. 1-7 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestial Conditions"J. Crystal Growth. 213. 40-50 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of Marangoni Convection on the Dissolution and Recrystallization Processes of InGaSb Semiconductors"Proc. 22^<nd> International Symposium on Space and Technology and Science. II. 1426-1433 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.KOMATSU, Y.HAYAKAWA, M.KUMAGAWA et al.: "Solidification of InGaSb under Reduced Gravity using a Drop Tower"Proc. Joint International Conference on Advanced Science and Technology. 375-378 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.ABE, Y.HAYAKAWA, M.KUMAGAWA et al.: "Crystallization of InGaSb in Preparation for the Futher Space Experiment under Microgravity"Proc. Joint International Conference on Advanced Science and Technology. 379-382 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.ADACHI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of He ating Rate on the Dissolution Process of GaSb into InSb Melt"Proc. Joint International Conference on Advanced Science and Technology. 383-386 (2000)

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      2001 Final Research Report Summary
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Growth of In_xGa_<1-x>As Bulk Mixed Crystals with a Uniform Composition by the Rotational Bridgman Method"J. Crystal Growth. 229. 124-129 (2001)

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      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Study on the Crystallization of InGaSh under Different Gravity Conditions"Proc. Space Bound 2000. (CD-ROM). (2001)

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      2001 Final Research Report Summary
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Study on the Effect of Natural and Marangoni Convection on the Melting of a Pseudo Binary Alloy under Normal and Reduced Gravity Fields"Proc. Space Bound 2000. (CD-ROM). (2001)

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      2001 Final Research Report Summary
  • [Publications] 早川泰弘, 熊川征司, 他: "微小重力下と地上におけるGaSb/InSb/GaSb試料の溶解実験と数値解析"静岡大学電子工学研究所研究報告. 34. 1-7 (2000)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] A.HIRATA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of Gravity on the Melting of In-Sb Melt"Jnt. J. Applied Electromagnetics in Materials. 10. 527-536 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method"Computer Modeling in Engineering & Sciences. 1. 1-5 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.UMEMURA, Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb Sandwich Structured Sample"Proc. Joint International Conference on Advanced Science and Technology. 28-31 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.NAKAMURA, Y.HAYAKAWA, M.KUMAGAWA et al.: "A Comparative Analysis on the Crystallization of InGaSb under Reduced Gravity using Parabolic Flight of an Airplane and Normal Gravity Conditions"Proc. Joint International Conference on Advanced Science and Technology. 367-370 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.MURAKANI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Drop Tower Experiments on the Melting of GaSb and InSb"Proc. Joint International Conference on Advanced Science and Technology. 371-374 (2000)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "A Numerical Study for the Melting of a Pseudo Binary Alloy under Normal and Reduced Gravity"Prof. 6^<th> World Congress of Chemical Engineering. (CD-ROM). (2001)

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      2001 Final Research Report Summary
  • [Publications] N.ARAKI, Y.HAYAKAWA et al.: "Measuring Thermal Diffusivities of Semiconductor Melts"Proc. The Sixth Asian Thermophysical Properties Conference. 55-60 (2001)

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      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Microgravity Experiments on Melting and Crystallization of InGaSb Performed using a Drop Tower"Proc. 52^<nd> International Autronautical Conference. 1-6 (2001)

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      2001 Final Research Report Summary
  • [Publications] N.MURAKAMI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Analysis of Grvity Influence on Dissolution of GaSb into InSb Mekt"Proc. Joint International Conference on Advanced Science and Technology. 280-283 (2001)

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      2001 Final Research Report Summary
  • [Publications] 早川泰弘, 岡野泰則, 熊川征司: "航空機利用による微小重力環境下におけるInGaSb半導体の結晶成長"日本マイクログラビテイ応用学会誌. 18. 79-83 (2001)

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      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Effects of Gravity on Crystallization of InGaSb"Proc. 43^<rd> DAE-Solid State Physics Symposium. 26-29 (2002)

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      2001 Final Research Report Summary
  • [Publications] 岡野泰則, 早川泰弘, 熊川征司: "GaSb/InSb/GaSbサンドイッチ構造試料溶融に及ぼす自然対流、マランゴニ対流の影響に関する数値解析"日本マイクログラビテイ応用学会誌. 19. 24-29 (2002)

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      2001 Final Research Report Summary
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Study of Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb"J. Crystal Growth. 235. 135-139 (2002)

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      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Experimental and Numerical analysis of Crystallization Processes of In_xGa_<1-x>Sb under Different Gravity Concitions"The Journal of Space Technology and Science. 15. 11-20 (2002)

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      2001 Final Research Report Summary
  • [Publications] Y.HAYAKAWA, S.DOST, M.KUMAGAWA et al.: "Drop Experiments on Crsytallization of InGaSb Semiconductors"J. Crystal Growth. (In print). (2002)

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  • [Publications] T.OZAWA, Y.HAYAKAWA M/KUMAGAWA et al.: "Numerical Analysis of Effect of Ampoule Rotation for the Growth of InGaSb by Rotational Bridgman Method"J. Crystal Growth. (In print). (2002)

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      2001 Final Research Report Summary
  • [Publications] K.BALAKRISHNAN, Y.HAYAKAWA, M.KUMAGAWA et al.: "Airplane and Drop Experiments on Crystallization of In_xGa_<1-x>Sb Semiconductors under Different Gravity Conditions"Proc. MRS Fall Meeting Symposium. (In print). (2002)

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      2001 Final Research Report Summary
  • [Publications] T.ARAKI, Y.HAYAKAWA: "Thermal Diffusivity of High-Temperature Melts (Specimen Enclosed in a in a Quartz Container)"High Temperature-High Pressures. (In print). (2002)

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      2001 Final Research Report Summary
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Advances in Computational Engineering Sciences 2000"Tech Science Press (Edited by Satye N.Atluri and Frederick W.Brust). 6 (2000)

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      2001 Final Research Report Summary
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Advances in Computational Engineering Sciences 2001"Tech Science Press (Edited by Satye N.Atluri and Frederick W.Brust). 6 (2001)

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      2001 Final Research Report Summary
  • [Publications] Y. Okano, N. Audet, S. Dost, Y. Hayakawa and M. Kumagawa: "Numerical Simulation of Oscillatory Flow in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method"Int. J. Numver. Model. 11. 289-298 (1999)

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      2001 Final Research Report Summary
  • [Publications] K. Balakrishnan, N. Shibata, Y. Hayakawa, Y, Okano, T. Ozawa, M. Miyazawa, T. Koyama, T. Yamaguchi and M. Kumagawa: "Preparatory Terrestrial Growth of InGaSb for the Crystallization in Space"Proc. of Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 99) (Hangzhou, Republic of China, 1999). 213-216 (1999)

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  • [Publications] N. Shibata, Y. Hayakawa, Y. Okano, T. Ozawa, K. Balakrishnan, T. Kimura, Y. Enomoto, M. Katsumata, S. Abe, H. Komatsu, M. Miyazawa, K .Arafune, N. Imaishi, T. Koyama, T. Yamaguchi and M. Kumagawa: "Premilinary Experiments of InGaSb Growth in the Space Station"50th International Astronautical Congress (Amsterdam, The Netherland). 1-7 (1999)

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  • [Publications] A. Hirata, K. Okitsu, Y. Hayakawa, Y. Okano, S. Sakai, S. Fujiwara, T. Yamaguchi, N. Imaishi, S. Yoda, T. Oida and M. Kumagawa: "Effects of Gravity on the Mixing of In-Sb Melt"Int.J.Applied Electromagnetics and Mechanics. 10 [6]. 527-536 (2000)

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  • [Publications] Y. Hayakawa, Y. Okano, A. Hirata, N. Imaishi, Y. Kumagiri, X. Zhong, X. Xie, B. Yuan, F. Wu, H. Li, T. Yamaguchi and M. Kumagawa: "Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestrial Conditions"J.Cryst.Growth. 213[1/2]. 40-50 (2000)

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      2001 Final Research Report Summary
  • [Publications] T. Ozawa, N. Ishigami, Y. Hayakawa, K. Koyama and M. Kumagawa: "3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method"Computer Modeling in Engineering & Sciences. 1 [1]. 1-5 (2000)

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      2001 Final Research Report Summary
  • [Publications] T. Ozawa, Y. Hayakawa, Y. Okano, H. Adachi, N. Morio, K. Balakrishnan, T. Yamaguchi, M. Miyazawa, A. Hirata, N. Imaishi, L.H. Dao and M. Kumagawa: "Numerical Simulation for Dissolution Processes of InGaSb Semiconductors"Advances in Computational Engineering Sciences vol.1 (Edited by Satya N.Atluri and Frederick W.Brust) Tech Science Press. 328-333 (2000)

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  • [Publications] Y. Hayakawa, Y. Okano, T. Ozawa, K. Balakrishnan, M. Miyazawa, T. Yamaguchi, A. Hirata, N. Imaishi, S. Dost, L.H. Dao and M. Kumagawa: "Effect of Marangoni Convection on the Dissolution and Recrystallization Processes of InGaSb Semiconductors"Proc. 22^<nd> International Symposium on Space Technology and Science (Morioka Japan, 2000) II. 1426-1433 (2000)

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  • [Publications] S. Umemura, Y. Okano, Y. Hayakawa, S. Kumagawa, A. Hirata and S. Dost: "Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb Sandwich Structured Sample"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20)(Hamamatsu, Japan, 2000). 28-31 (2000)

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      2001 Final Research Report Summary
  • [Publications] T. Nakamura, Y. Hayakawa, K. Balakrishnan, N. Shibata, H. Komatsu, N. Murakami, T. Yamada, D. Krishnamurthy, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, A. Hirata, K. Arafune, S. Dost, L.H. Dao, and M. Kumagawa: "A Comparative Analysis on the Crystallization of InGaSb under Reduced Gravity using Parabolic Flight of an Airplane and Normal Gravity Conditions"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20) (Hamamatsu, Japan, 2000). 367-370 (2000)

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      2001 Final Research Report Summary
  • [Publications] N. Murakami, Y. Hayakawa, K. Balakrishunan, N. Shibata, H. Komatsu, T. Nakamura, T. Yamada, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, A. Hirata, S. Dost, L.H. Dao and M. Kumagawa: "Drop Tower Experiments on the Melting of GaSb and InSb"Proc.Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20) (Hamamatsu, Japan, 2000). 371-374 (2000)

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      2001 Final Research Report Summary
  • [Publications] H. Komatsu, Y. Hayakawa, K. Balakrishnan, N. Shibata, N. Murakami, T. Nakamura, T. Yamada, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, A. Hirata, S. Dost, L.H. Dao and M. Kumagawa: "Solidification of InGaSb under Reduced Gravity using a Drop Tower"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20) (Hamamatsu, Japan, 2000). 375-378 (2000)

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      2001 Final Research Report Summary
  • [Publications] S. Abe, Y. Hayakawa, K. Balakrishnan, N. Shibata, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, A. Hirata, S. Dost, L.H. Dao and M. Kumagawa: "Crystallization of InGaSb in Preparation for the Future Space Experiment under Microgravity"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20) (Hamamatsu, Japan, 2000). 379-382 (2000)

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      2001 Final Research Report Summary
  • [Publications] H. Adachi, Y. Hayakawa, T. Ozawa, Y. Okano, S. Abe, N. Murakami, K. Balakrishnan, T. Koyama and M. Kumagawa: "Effect of Heating Rate on the Dissolution Process of GaSb into InSb Melt"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 20) (Hamamatsu, Japan, 2000). 383-386 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Ozawa, Y. Hayakawa, K. Balakrishnan, F. Ohonishi, T. Koyama and M. Kumagawa: "Growth of In_xGa_<1-x>As Bulk Mixed Crystals with A Uniform Composition by the Rotational Bridgman Method"J. Cryst. Growth. 124-129 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hayakawa, Y. Okano, K. Balakrishnan, T. Ozawa, T. Koyama, M. Miyazawa, T. Yamaguchi, A. Hirata, N. Imaishi, S. Dost, Le H. Dao and M. Kumagawa: "Study on the Crystallization of InGaSb under Different Gravity Conditions"Proc. Space Bound 2000 (in CD-ROM) (Vancouver, Canada). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Okano, Y. Hayakawa, M. Kumagawa, A. Hirata and S. Dost: "Numerical Study on the Effect of Natural and Marangoni Convection on the Melting of A Pseudo Binary Alloy under Normal and Reduced Gravity Fields"Proc. Space Bound 2000 (in CD-ROM) (Vancouver, Canada). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Ozawa, Y. Hayakawa, Y. Okano, K. Ori, H. Adachi, N. Murakami, K. Balakrishnan, M. Miyazawa, A. Hirata, N. Imaishi and M. Kumagawa: "Effect of Gravity Force on the Dissolution Process of GaSb into InSb Melt"Advance in Computational Engineering & Science 2001, (133 file in CD-ROM) (Puerto Vallarta, Mexico). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Okano, Y. Hayakawa, M. Kumagawa, A. Hirata and S. Dost: "A Numerical Study for the Melting of A Pseudo Binary Alloy System under Normal and Reduced Graivty"Prof. 6th World Congress of Chemical Engineering (in CD-ROM) (Melbourne, Australia). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Araki, D.W. Tang, H. Totsuka and Y. Hayakawa: "Measuring Thermal Diffusivities of Semiconductor Melts"Proc. the Sixth Asian Thermophysical Properties Conference (Guwahati, India, 2001). 55-60 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hayakawa, K Balakurishnan, H. Komatsu, N. Murakami, T. Nakamura, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, S. Dost, Le H. Dao and M. Kumagawa: "Microgravity Experiments on Melting and Crystllization of InGaSb"52^<nd> International Astrnautical Congress (Toulouse, France). 1-6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Murakami, T. Kimura, H. Adachi, T. Ozawa, Y. Okano, K. Balakrishnan, T. Arafune, T. Koyama, Y. Hayakawa and M. Kumagawa: "Numerical Analysis of Gavity Influence on Dissolution of GaSb into InSb Melt"Proc. Joint International Conference on Advanced Science and Technology by Shizuoka University and Zhejiang University (JICAST 2001) (Hangzhou, Republic of China). 280-283 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Okano, S. Umemura, Y. Enomoto, Y. Hayakawa, M. Kumagawa, A. Hirata and S. Dost: "Numerical Study of Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb"J. Cryst.Growth.. vol.235. 135-139 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hayakawa, K. Balakrishnan, Y. Okano, T. Ozawa, T. Kimura, H. Komatsu, N. Murakami, T. Nakamura, K. Arafune, T. Koyama, M. Miyazawa, A. Hirata, N. Imaishi, S. Dost, Le.H. Dao and M. Kumagawa: "Experimental and Numerical analysis of Crystallization Processes of In_x-Ga_<1-x>Sb under Different Gravity Conditions"J. Space Technology and Science. 15 [1]. 11-20 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hayakawa, K. Balakrishnan, H. Komatsu, N. Murakarmi, T. Nakamura, T. Koyama, T. Ozawa, Y. Okano, M. Miyazawa, S. Dost, Le H. Dao and M. Kumagawa: "Drop Experiments on Crystallization of InGaSb Semiconductors"J. Cryst. Growth.. (in print.). (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Ozawa, Y. Hayakawa, K. Balakrishnan and M. Kumagawa: "Numerical Simulation of Effect of Ampoule Rotation for the Growth of InGaSb by Rotational Bridgman Method."J. Cryst. Growth. (in print). (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Araki, Y. Tozawa, D. Tang and Y. Hayakawa: "Thermal Diffusivity of High-Temperature Melts (Specimen Enclosed in a in a Quartz Container)"Hign Temperature-High Pressures. Vol.33 (in print). (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Balakrishnan, Y. Hayakawa, H. Komatsu, N. Murakarmi, T. Nakamura, T. Kimura, T. Ozawa, Y. Okano, M. Miyazawa, S. Dost, Le H. Dao and M. Kumagawa: "Airplane and Drop Experiments on Crystallization of In_xGa_<1-x>Sb Semiconductor under Different Gravity Conditions"2001 MRS Fall Meeting Symposium H : Progress in Semiconductor Materials for Optoelectronic Applications (Boston, USA, 2001.11). (in print.). (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.KIMURA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Dependence of Dissolution and Growth Processes of Compound Semiconductors on Crystal Surface Orientation"The Japan Society of Microgravity Application. 15. 472-475 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Simulation of Ocillatory Flow in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method"Int.J.Numerical Modeling. 11. 289-298 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.BALAKRISHNAN, Y.HAYAKAWA, M.KUMAGAWA et al.: "Preparatory Terrestrial Growth of InGaSb for the Crystallization in Space"Proc. Joint International Conference on Advanced Science and Technology. 213-216 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.SHIBATA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Preliminary Experiments of InGaSb Growth in the Space Station"Proc. 50^<th> International Astronautical Congress. 1-7 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestial Conditions"J.Crystal Growth. 213. 40-50 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of Marangoni Convection on the Dissolution and Recrystallization Processes of InGaSb Semiconductors"Proc. 22^<nd> International Symposium on Space and Technology and Science. II. 1426-1433 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] 早川泰弘, 熊川征司 他: "微小重力下と地上におけるGaSb/InSb/GaSb試料の溶解実験と数値解析"静岡大学電子工学研究所研究報告. 34. 1-7 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.HIRATA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of Gravity on the Melting of In-Sb Melt"Int.J.Applied Electromagnetics in Materials. 10[6]. 527-536 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method"Computer Modeling in Engineering & Sciences. 1[1]. 1-5 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.UMEMURA, Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb Sandwich Structured Sample"Proc. Joint International Conference on Advanced Science and Technology. 28-31 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.NAKAMURA, Y.HAYAKAWA, M.KUMAGAWA et al.: "A Comparative Analysis on the Crystallization of InGaSb under Reduced Gravity using Parabolic Flight of an Airplane and Normal Gravity Conditions"Proc. Joint International Conference on Advanced Science and Technology. 367-370 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.MURAKANI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Drop Tower Experiments on the Melting of GaSb and InSb"Proc. Joint International Conference on Advanced Science and Technology. 371-374 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.KOMATSU, Y.HAYAKAWA, M.KUMAGAWA et al.: "Solidification of InGaSb under Reduced Gravity using a Drop Tower"Proc. Joint International Conference on Advanced Science and Technology. 375-378 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.ABE, Y.HAYAKAWA, M.KUMAGAWA et al.: "Crystallization of InGaSb in Preparation for the Futher Space Experiment under Microgravity"Proc. Joint International Conference on Advanced Science and Technology. 379-382 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.ADACHI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Effect of Heating Rate on the Dissolution Process of GaSb into InSb Melt"Proc. Joint International Conference on Advanced Science and Technology. 383-386 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Growth of In_xGa_<1-x>As Bulk Mixed Crystals with a Uniform Composition by the Rotational Bridgman Method"J.Crystal Growth. 229. 124-129 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Study on the Crystallization of InGaSb under Different Gravity Conditions"Proc.Space Bound 2000. (CD-ROM). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Study on the Effect of Natural and Marangoni Convection on the Melting of a Pseudo Binary Alloy under Normal and Reduced Gravity Fields"Proc.Space Bound 2000. (CD-ROM). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "A Numerical Study for the Melting of a Pseudo Binary Alloy under Normal and Reduced Gravity"Prof. 6^<th> World Congress of Chemical Engineering. (CD-ROM). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.ARAKI, Y.HAYAKAWA et al.: "Measuring Thermal Diffusivities of Semiconductor Melts"Proc. The Sixth Asian Thermophysical Properties Conference. 55-60 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, M.KUMAGAWA et al.: "Microgravity Experiments on Melting and Crystallization of InGaSb Performed using a Drop Tower"Proc. 52^<nd> International Autronautical Conference. 1-6 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.MURAKAMI, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Analysis of Gravity Influence on Dissolution of GaSb into InSb Mekt"Proc. Joint International Conference on Advanced Science and Technology. 280-283 (2001)

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      2001 Annual Research Report
  • [Publications] 早川泰弘, 岡野泰則, 熊川征司: "航空機利用による微小重力環境下におけるInGaSb半導体の結晶成長"日本マイクログラビテイ応用学会誌. 18. 79-83 (2001)

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      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Effects of Gravity on Crystallization of InGaSb"Proc. 43^<rd> DAE-Solid State Physics Symposium. 26-29 (2002)

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      2001 Annual Research Report
  • [Publications] 岡野泰則, 早川泰弘, 熊川征司: "GaSb/InSb/GaSbサンドイッチ構造試料溶融に及ぼす自然対流、マランゴニ対流の影響に関する数値解析"日本マイクログラビテイ応用学会誌. 19. 24-29 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.OKANO, Y.HAYAKAWA, M.KUMAGAWA et al.: "Numerical Study of Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb"J.Crystal Growth. 235. 135-139 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, S.DOST, M.KUMAGAWA et al.: "Drop Experiments on Crystallization of InGaSb Semiconductors"J.Crystal Growth. (In print). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.OZAWA, Y.HAYAKAWA, M/KUMAGAWA et al.: "Numerical Analysis of Effect of Ampoule Rotation for the Growth of InGaSb by Rotational Bridgman Method"J.Crystal Growth. (In print). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.BALAKRISHNAN, Y.HAYAKAWA, M.KUMAGAWA et al.: "Airplane and Drop Experiments on Crystallization of In_xGa_<1-x>Sb Semiconductors under Different Gravity Conditions"Proc. MRS Fall Meeting Symposium. (In print). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.HAYAKAWA, Y.OKANO, M.KUMAGAWA et al.: "Experimental and Numerical analysis of Crystallization Processes of In_xGa_<1-x>Sb under Different Gravity Conditions"The Journal of Space Technology and Science. (In print). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.ARAKI, Y.HAYAKAWA: "Thermal Diffusivity of High-Temperature Melts (Specimen Enclosed in a in a Quartz Container)"High Temperature-High Pressures. (In press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Advances in Computational Engineering Sciences 2000"Tech Science Press (Edited by Satye N.Atluri and Frederick W.Brust). 6 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.OZAWA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Advances in Computational Engineering Sciences 2001"Tech Science Press (Edited by Satye N.Atluri and Frederick W.Brust). 6 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.KIMURA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Dependence of Dissolution and Growth Processes of Compound Semiconductors on Crystal Surface Orientation"The Japan Society of Microgravity Application. 15. 472-475 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.OKANO,Y.HAYAKAWA,M.KUMAGAWA et al.: "Numerical Simulation of Ocillatory Flow in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method"Int.J.Numerical Modeling. 11. 289-298 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.BALAKRISHNAN,Y.HAYAKAWA,M.KUMAGAWA et al.: "Preparatory Terrestrial Growth of InGaSb for the Crystallization in Space "Proc.Joint International Conference on Advanced Science and Technology. 213-216 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.SHIBATA,Y.HAYAKAWA,M.KUMAGAWA et al: "Preliminary Experiments of InGaSb Growth in the Space Station"Proc.50^<th> International Astronautical Congress. 1-7 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.HAYAKAWA,M.KUMAGAWA et al: "Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestial Conditions"J.Crystal Growth. 213. 40-50 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 早川泰弘,熊川政司 他: "微小重力下と地上におけるGaSb/InSb/GaSb試料の溶解実験と数値解析"静岡大学電子工学研究所研究報告. 34. 1-7 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.HIRATA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Effect of Gravity on the Melting of In-Sb Melt"Int.J.Applied Electromagnetics in Materials. 10[6]. 527-536 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.OZAWA,Y.HAYAKAWA,M.KUMAGAWA et al.: "3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method"Computer Modeling in Engineering & Sciences. 1[1]. 1-5 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.UMEMURA,Y.OKANO,Y.HAYAKAWA,M.KUMAGAWA et al: "Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb Sandwich Structured Sample"Proc.Joint International Conference on Advanced Science and Technology. 28-31 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.NAKAMURA,Y.HAYAKAWA,M.KUMAGAWA et al.: "A Comparative Analysis on the Crystallization of InGaSb under Reduced Gravity using Parabolic Flight of an Airplane and Normal Gravity Conditions"Proc.Joint International Conference on Advanced Science and Technology. 367-370 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.MURAKANI,Y.HAYAKAWA,M.KUMAGAWA et al.: "Drop Tower Experiments on the Melting of GaSb and InSb"Proc.Joint International Conference on Advanced Science and Technology. 371-374 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.KOMATSU,Y.HAYAKAWA,M.KUMAGAWA et al.: "Solidification of InGaSb under Reduced Gravity using a Drop Tower"Proc.Joint International Conference on Advanced Science and Technology. 375-378 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.ABE,Y.HAYAKAWA,M.KUMAGAWA et al.: "Crystallization of InGaSb in Preparation for the Futher Space Experiment under Microgravity"Proc.Joint International Conference on Advanced Science and Technology. 379-382 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.ADACHI,Y.HAYAKAWA,M.KUMAGAWA et al.: "Effect of Heating Rate on the Dissolution Process of GaSb into InSb Melt"Proc.Joint International Conference on Advanced Science and Technology. 383-386 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.OZAWA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Advances in Computational Engineering Sciences (Edited by Satye N.Atluri and Frederick W.Brust)"Tech Science Press. 6 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.KIMURA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Dependence of Dissolution and Growth Processes of Compound Semiconductors on Crystal Surface Orientations"The Japan Society of Microgravity Application. 15. 472-475 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.OKANO,Y.HAYAKAWA,M.KUMAGAWA et al.: "Numerical Simulation of Oscillatory Flow in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method"Int.J.Numerical Modelling. 11. 289-298 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.BALAKRISHNAN,Y.HAYAKAWA,M.KUMAGAWA et al.: "Preparatory Terrestrial Growth of InGaSb for the Crystallization in Space"Proc.of JSCAST'99. 213-216 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.SHIBATA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Premilinary Experiments of InGaSb Growth in the Space Station"Proc.50th International Astronautical Congress. 1-7 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 早川泰弘、熊川征司、他: "微小重力下と地上におけるGaSb/InSb/GaSb試料の溶解実験と数値解析"静岡大学電子工学研究所研究報告. 34. 1-7 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.HAYAKAWA,M.KUMAGAWA et al.: "Experimental and Numerical Investigations on Dissolurion and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestrial Conditions"J.Cryst.Growth. (at press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.HIRATA,Y.HAYAKAWA,M.KUMAGAWA et al.: "Effect of Gravity on the Mixing of In-Sb Melt"Int.J.Applied Electromagnetics in Materials. (at press). (2000)

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      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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