| Project/Area Number |
11695042
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
MORISAKI Hiroshi The University of Electro-Communications, Faculty of Electro-Communications, Professor, 電気通信学部, 教授 (00029167)
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| Co-Investigator(Kenkyū-buntansha) |
ONO Hiroshi The University of Electro-Communications, Faculty of Electro-Communications, Research Assikstant, 電気通信学部, 助手 (00134867)
NOZAKI Shinji The University of Electro-Communications, Faculty of Electro-Communications, Associate Prof., 電気通信学部, 助教授 (20237837)
UCHIDA Kazuo The University of Electro-Communications, Faculty of Electro-Communications, Associate Prof., 電気通信学部, 助教授 (80293116)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 2001: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2000: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1999: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | Griffith University / Semiconductor Position Sensitive Detector / MOVPE / Granular Metal Film / Coulomb Blockade / Cluster-Beam Evaporation / Phase Transformation / High-Pressure Form / Position Sensitive Detector (PSD) / HBT / Siナノ構造 / 半導体位置センター / ナノ構造デバイス / MEMS / 電子線ソングラフィー / 集積デバイス |
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| Research Abstract |
The aim of the research program is to develop international collaboration of education and research on nano-structured semiconductor materials and devices between Griffith University Group (GUG headed by Professor Barry Harrison) and our group (UECG). We have invited twice Mr. J.Combes, a post-graduate student of GUG as an : exchange student, who has made excellent contribution to the progress of the research on the semiconductor position sensitive detector. As a research interchange between GUG and UECG, several academic staffs from both. Universities have visited each other to develop nana-structured semiconductor devices using various semiconductor process facilities in both Universities. We have developed the position sensitive devices using a current-dividing resistor composed of granular metal as well as many GalnP/GaAs photo-detectors. We: have also investigated the phase transformation induced by nano-structuring of semiconductors.' In addition to the discovery of the new phase of nano-structured Ge, we have also found that nano-structured Si can transform to the Wurzite structure, a high-pressure form of crystalline Si. The stability of the high-pressure forms of crystalline Ge have been studied by applying hydrostatic pressure as high as 10GPa. The cluster-size in nano-structured Ge films deposited by the cluster-beam evaporation technique becomes very uniform by the photo-oxidation. We have found that the photo-oxidized Ge films can show the coulomb blockade effect even at the room temperature. The possible single electron devices using this phenomenon has been discussed in both UECG and GUG.
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