| Project/Area Number |
11792002
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| Research Category |
Grant-in-Aid for University and Society Collaboration
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
MIYAZAKI Terunobu Tohokou University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (60101151)
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| Co-Investigator(Kenkyū-buntansha) |
KUMAGAI Seiji Sony Corporation, Device Devision, Chief Researcher, 主任研究員
KUBOTA Hitoshi Tohokou University, Graduate School of Engineering, Research Assistant, 大学院・工学研究科, 助手 (30261605)
ANDO Yasuo Tohokou University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (60250726)
SUGAWARA Junichi Sony Corporation, Device Devision, Researcher, 研究員
NAKASHIO Eiji Sony Corporation, Device Devision, Researcher, 研究員
韓 秀峰 東北大学, 大学院・工学研究科, 特別研究員
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥9,800,000 (Direct Cost: ¥9,800,000)
Fiscal Year 2001: ¥9,800,000 (Direct Cost: ¥9,800,000)
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| Keywords | tunnel magnetoreistance (TMR) effect / magnetic tunnel junction (MTJ) / magnetic read head / tunnel resistance / conductive atomic force microscopy (c-AFM) / flux-guide / a long-range exchange interaction / reproduced wave form / スピントンネル素子 / 低抵抗 / ラフネス / 結晶配向 / 磁気テープ / 低抵抗化 / トンネル磁気抵抗 / 高TMR比 / 電流像 / HDD / MRAM / 酸化アルミニウム / 銅 / 白金 / 表面ラフネス |
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| Research Abstract |
Spin tunnel junction is one of the potential candidate for highly sensitive magnetic read head. However, in practical use, there are some difficulties to be overcome : large noise, low data transfer rate, and difficulty in applying magnetic bias fields. The first and the second problerns are due to large junction resistance and the third one is due to the characteristic junction geometry which is much different from metallic GMR head geometry. In this research project, the research group in Graduate School of Engineering, Tohoku university, together with the group in SONY Corporation have made experimental research to overcome these difficulties.
The Tohoku University group engaged in the fabrication of low tunnel resistance junctions by thinning insulating films in the junctions. Local transport properties of the insulating layers were examined using conductive atomic force microscopy (c-AFM). It has been concluded that the insulating layers less than 0.8 nm contain defects, which caus
… More
e the reduction of tunnel magnetoresistance (TMR) ratios. It has been also made clear that oxygen content in the insulating layer becomes homogeneous in the annealing process, resulted in the increase of the TMR ratios. In order to reduce the number of defects in the insulating layer, various kinds of materials were investigated as buffer layers. In conclusion, a low resistance value (about 80 Ω・um^2) and a high TMR (30%) were obtained using Cu buffer layer and 0.6 nm thick Al in the insulating layer. In case of Ni-Fe buffer layer, it is possible to reduce the resistance further keeping high TMR ratios.
The SONY group engaged in the development of read head design for the spin tunnel junctions. Flux guide was adopted in the head to avoid the mechanical damage on the junction and also to increase the junction area. The permanent magnet bias method, which is commonly used in GMR read head, causes electrical short circuiting in spin tunnel magnetoresistive read head. Therefore, a long range exchange coupling biasing scheme was employed to apply a bias field to the flux-guide. The reading performance of a test head was measured in a stationary head/metal tape configuration using helical scanning system. The output signal increased up to 1.75 mV_<p-p>, which was corresponding to +2.4 dB output of a conventional read head. In conclusion it has been demonstrated that the flux-guide type structure combined with a long-range exchange bias method is feasible for spin tunnel magnetoresistive read head. Less
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