触媒化学気相成長法によるシリコン系薄膜の成長プロセス

• Project/Area Number: 11895001
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 企画調査
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: 松村 英樹 北陸先端科学技術大学院大学, 材料科学研究科, 教授 (90111682)
• Co-Investigator(Kenkyū-buntansha): 増田 淳 北陸先端科学技術大学院大学, 材料科学研究科, 助手 (30283154) ; 和泉 亮 北陸先端科学技術大学院大学, 材料科学研究科, 助手 (30223043) ; 梅本 宏信 北陸先端科学技術大学院大学, 材料科学研究科, 助教授 (80167288) ; 野々村 修一 岐阜大学, 大学院工学研究科, 教授 (80164721) ; 小長井 誠 東京工業大学, 工学部, 教授 (40111653)
• Project Period (FY): 1999
• Project Status: Completed (Fiscal Year 1999)
• Budget Amount: ¥3,300,000 (Direct Cost: ¥3,300,000); Fiscal Year 1999: ¥3,300,000 (Direct Cost: ¥3,300,000)
• Keywords: 触媒化学気相成長 / Cat-CVD / ホットワイアCVD / 薄膜 / アモルファスシリコン / 微結晶シリコン / 窒化シリコン / 太陽電池

Research Abstract

触媒化学気相成長(触媒CVD、Cat-CVD)法はホットワイアCVD法とも呼ばれ、研究代表者(松村)らによる10数年にわたる研究の結果、アモルファスシリコン膜、微(多)結晶シリコン膜、シリコン窒化膜などの形成法として有望であることが明らかになり、薄膜太陽電池、薄膜トランジスタなどの大面積デバイス用半導体膜や化合物半導体デバイス保護膜の形成手法として注目されている。このような状況下において、Cat-CVD法の研究者ならびに関連周辺分野の研究者を一同に会した国際会議を開催し、Cat-CVD法におけるシリコン系薄膜の成長機構の解明などの基礎的検討からデバイス応用にいたるまで、幅広い視点で議論するこをは極めて有益である。本研究では、国際会議開催の準備段階として、Cat-CVD法ならびに関連周辺分野の研究者で研究組織を結成し、Cat-CVD法と周辺技術の現状における問題点とその解決手段を広く調査し、平成12年度に開催予定の国際会議のプログラム編成に役立て、同会議を一層充実したものにすることを目的とした。調査の結果、ホットワイアセル法においてジシランを用いることにより堆積速度28Å/sで多結晶シリコン膜が得られること、Cat-CVD法により16.5Å/Sの高速でアモルファスシリコン膜を堆積しても初期効率9.8%の太陽電池が得られること、Cat-CVD法で作製したアモルファスシリコン膜がマイクロマシンに適用可能であることなどが明らかになった。今年度得られた調査結果は、研究代表者の主催で開催したInternational Pre-Workshop on Cat-CVD(Hot-WireCVD)Processにおいて公開し、Extended Abstractを発行した。当該Workshopには国内外から110名の参加者があり、Cat-CVD法の普及ならびに育成に貢献するとともに、Workshopでの議論は平成12年11月に開催予定の国際会議のプログラム編成に役立てることができた。

Research Products

• [Publications] Hideki Matsumura: "Properties of Cat-CVD silicon films used in TFT (Invited)"Proceedings of the 4th Symposium on Thin Film Transistor Technologies. 98-22巻. 280-287 (1999)
• [Publications] 工藤 昭吉: "Cat-CVD SiN_x膜の面内均一性向上に関する検討"電子情報通信学会技術研究報告. ED99号21巻. 59-66 (1999)
• [Publications] Akira Heya: "Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten"Applied Physics Letters. 74巻15号. 2143-2145 (1999)
• [Publications] Akira Izumi: "Properties of catalytic CVD SiN_x for antireflection coatings"Materials Research Society Symposium Proceedings. 555巻. 161-166 (1999)
• [Publications] Atsushi Masuda: "Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: Application to preparation of Er-doped hydrogenated amorphous Si films"Proceedings of the 5th International Symposium on Sputtering &Plasma Processes. 23-24 (1999)
• [Publications] Akira Izumi: "Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method"Thin Solid Films. 343-344巻. 528-531 (1999)
• [Publications] Akira Heya: "Improvement of polycrystalline silicon film by atomic hydrogen anneal at low temperature"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. 119-122 (1999)
• [Publications] Atsushi Masuda: "Direct crystal growth of poly-Si films on glass substrates by catalytic CVD with incubation time"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. 123-126 (1999)
• [Publications] Hiroto Kasai: "Silicon thin films produced by catalytic CVD method at high pressure condition using Ar diluted SiH_4 gases"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. (1999)
• [Publications] Hidekazu Sato: "Improvement in characteristics of gate insulator by post-deposited treatment using a catalytic CVD system"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. 139-142 (1999)
• [Publications] Manabu Kudo: "Low-temperature oxidation of Si using activated oxygen generated by tungsten catalytic reaction for TFT gate insulator application"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. 147-150 (1999)
• [Publications] Hideki Matsumura: "Low-temperature formation of poly-Si films by catalytic-CVD method (Invited)"Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-. 221-224 (1999)
• [Publications] Chisato Niikura: "Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition"Journal of Applied Physics. 86巻2号. 985-990 (1999)
• [Publications] Akira Izumi: "Low-temperature oxidation of silicon surface using a gas mixture of H_2 and O_2 in a catalytic chemical vapor deposition system"Electrochemical and Solid-State Letters. 2巻8号. 388-389 (1999)
• [Publications] Atsushi Masuda: "Dominant parameter determining dangling-bond density in a-Si:H films prepared by catalytic CVD"Technical Digest of 11th International Photovoltaic Science and Engineering Conference. 399-400 (1999)
• [Publications] Yoshinori Ide: "Fabrication of polycrystalline silicon thin film solar cells by hot wire cell method"Technical Digest of 11th International Photovoltaic Science and Engineering Conference. 775-776 (1999)
• [Publications] Hidekuni Harada: "The creation of hydrogen radicals by the hot-wire technique and its application for μc-Si:H"Technical Digest of 11th International Photovoltaic Science and Engineering Conference. 779-780 (1999)
• [Publications] Akira Heya: "Structural control of Cat-CVD poly-Si films by gas phase reaction using pure SiH_4 gas"Technical Digest of 11th International Photovoltaic Science and Engineering Conference. 781-782 (1999)
• [Publications] Mitsuru Ichikawa: "High rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane"Technical Digest of 11th International Photovoltaic Science and Engineering Conference. 943-944 (1999)
• [Publications] Hideki Matsumura: "System of Cat-CVD project and summary of 1 year research"Extended Abstract of the Open Meeting of Cat-CVD Project. 1-8 (1999)
• [Publications] Namiko Honda: "Transport and generation mechanism of deposition precursors in catalytic CVD"Extended Abstract of the Open Meeting of Cat-CVD Project. 9-13 (1999)
• [Publications] Yoshitaka Nozaki: "Detection of free radicals in Cat-CVD processes by laser induced fluorescence spectroscopy"Extended Abstract of the Open Meeting of Cat-CVD Project. 15-18 (1999)
• [Publications] Atsushi Masuda: "Suppression of heat radiation in catalytic CVD using "catalytic plate""Extended Abstract of the Open Meeting of Cat-CVD Project. 19-22 (1999)
• [Publications] Akira Izumi: "Moisture resistant properties of silicon nitride films prepared by catalytic chemical vapor deposition method"Extended Abstract of the Open Meeting of Cat-CVD Project. 23-26 (1999)
• [Publications] Akiyoshi Kudo: "High-rate deposition of SiN_x thin films prepared by Cat-CVD method"Extended Abstract of the Open Meeting of Cat-CVD Project. 27-29 (1999)
• [Publications] Toshiharu Minamikawa: "Effect of exposure of Pb(Zr,Ti)O_3 ferroelectric capacitors to active ammonia gas cracked by catalytic chemical vapor deposition system"Extended Abstract of the Open Meeting of Cat-CVD Project. 31-34 (1999)
• [Publications] Hidekazu Sato: "High-quality ultra-thin silicon nitride gate dielectrics prepared by catalytic CVD"Extended Abstract of the Open Meeting of Cat-CVD Project. 35-38 (1999)
• [Publications] Akira Heya: "Crystallization of a-Si film by atomic hydrogen anneal at low temperatures"Extended Abstract of the Open Meeting of Cat-CVD Project. 39-43 (1999)
• [Publications] Naoji Nada: "Structural properties of polycrystalline silicon thin films prepared by catalytic CVD"Extended Abstract of the Open Meeting of Cat-CVD Project. 45-48 (1999)
• [Publications] Tatsuo Yoshioka: "Electrical properties of polycrystalline silicon films prepared by catalytic CVD"Extended Abstract of the Open Meeting of Cat-CVD Project. 49-52 (1999)
• [Publications] Hideki Matsumura: "Recent progress of Cat-CVD study in NEDO project"Extended Abstract of the International Pre-Workshop on Cat-CVD (Hot-Wire CVD) Process. 1-12 (1999)
• [Publications] Makoto Konagai: "Low temperature deposition of polycrystalline silicon thin films by hot wire cell method"Extended Abstract of the International Pre-Workshop on Cat-CVD (Hot-Wire CVD) Process. 13-20 (1999)
• [Publications] Shuichi Nonomura: "Microcrystalline Si thin film prepared by PECVD combined with Cat-CVD technique"Extended Abstract of the International Pre-Workshop on Cat-CVD (Hot-Wire CVD) Process. 47-53 (1999)
• [Publications] Hisayoshi Yamoto: "Low temperature Si epitaxial growth by Cat-CVD method"Extended Abstract of the International Pre-Workshop on Cat-CVD (Hot-Wire CVD) Process. 61-64 (1999)
• [Publications] Toshiharu Minamikawa: "Annealing effect of Pb(Zr,Ti)O_3 ferroelectric capacitor to active ammonia gas cracked by catalytic chemical vapor deposition system"Japanese Journal of Applied Physics Part 1. 38巻9B号. 5358-5360 (1999)
• [Publications] Hidekazu Sato: "Ultra-thin high quality silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperature"Materials Research Society Symposium Proceedings. 567巻. 155-160 (1999)
• [Publications] Akira Izumi: "Low temperature formation of ultra-thin SiO_2 layers using direct oxidation method in a catalytic chemical vapor deposition system"Materials Research Society Symposium Proceedings. 567巻(印刷中). (1999)
• [Publications] Hideki Matsumura: "Cat-CVD process and its application to preparation of Si-based thin films (Invited)"Materials Research Society Symposium Proceedings. 557巻(印刷中). (1999)
• [Publications] Akira Izumi: "Low temperature formation of passivation layers for compound semiconductors by catalytic CVD technique"Proceedings of 8th International Symposium on the Passivity of Metals and Semiconductors. (印刷中). (2000)
• [Publications] Atsushi Masuda: "Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: Application to preparation of Er-doped hydrogenated amorphous Si films"Vacuum. (未定印刷中). (2000)
• [Publications] Atsushi Masuda: "Novel deposition technique of Er-doped a-Si:H combining catalytic CVD and pulsed laser ablation"Journal of Non-Crystalline Solids. (未定印刷中). (2000)
• [Publications] Namiko Honda: "Transport mechanism of deposition precursors in catalytic CVD studied using a reactor tube"Journal of Non-Crystalline Solids. (未定印刷中). (2000)
• [Publications] Akira Heya: "Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal"Journal of Non-Crystalline Solids. (未定印刷中). (2000)
• [Publications] Atsushi Masuda: "Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition"Solar Energy Materials and Solar Cells. (未定印刷中). (2000)
• [Publications] Akira Izumi: "Plasma and fluorocarbon-gas free Si dry etching process using a Cat-CVD system"Microelectronic Engineering. (未定印刷中). (2000)
• [Publications] Manabu Kudo: "Low temperature direct-oxidation of Si using activated oxygen generated by tungsten catalytic reaction"Materials Research Society Symposium Proceedings. 592巻(印刷中). (2000)
• [Publications] Toshiharu Minamikawa: "Effects of active ammonia gas cracked in catalytic-CVD on PZT ferroelectric capacitors"Materials Research Society Symposium Proceedings. 596巻(印刷中). (2000)
• [Publications] Hidekazu Sato: "Preparation of high quality ultra-thin gate dielectrics by Cat-CVD and catalytic anneal"Materials Research Society Symposium Proceedings. 606巻(印刷中). (2000)