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Development of Field Emitters with Advanced Functions and Narrow Energy Spread

Research Project

Project/Area Number 12135202
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShizuoka University (2003)
Tohoku University (2000-2002)

Principal Investigator

MIMURA Hidenori  Research Institute of Electronics, Professor, 電子工学研究所, 教授 (90144055)

Co-Investigator(Kenkyū-buntansha) EGAMI Norifumi  Japan Broadcasting Corporation, Science & Technical Research Laboratories, Senior Research Engineer, 放送技術研究所, 主任研究員
KOMINAMI Yuko  KOMINAMI,Yuko, 電子工学研究所, 助手 (60313938)
NAKANISHI Yoichiro  NAKANISHI,Yoichiro, 電子工学研究所, 教授 (00022137)
SHIMAWAKI Hidetaka  Hachinohe Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (80241587)
横尾 邦義  東北大学, 電気通信研究所, 教授 (60005428)
佐藤 信之  東北大学, 電気通信研究所, 助手 (10178759)
石塚 浩  福岡工業大学, 工学部, 教授 (50015517)
Project Period (FY) 2000 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥29,000,000 (Direct Cost: ¥29,000,000)
Fiscal Year 2003: ¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 2002: ¥8,800,000 (Direct Cost: ¥8,800,000)
Fiscal Year 2001: ¥13,900,000 (Direct Cost: ¥13,900,000)
KeywordsSi emitter / GaAs emitter / Diamond emitter / energy analyser / miniature x-ray tube / Smith-Purcell radation / field emitter / time resolved x-ray radiograpy / 電子ビーム / スミスパセール光 / 機能性電子源 / 低エネルギー分散化 / カーボンナノチューブ / 変調電子ビーム / 光照射効果 / Si電界放射陰極 / 平面陰極 / 高輝度電子源 / ダイヤモンド / MOSトンネル陰極 / 共鳴トンネル陰極 / スミスパーセル効果 / GaAs / AlAs
Research Abstract

(a)Emitters with advanced functions : We have successfully fabricated the GaAs field emitter with an aspect ratio larger than 10 using both dry-and wet-etching. The saturation behavior is observed in the current-voltage characteristics of the GaAs emitter, suggesting that the bunched beam generated by the Gunn effect is emitted directly from the GaAs emitter. We have fabricated the novel planar emitter using polycrystalline diamond. Uniform emission with low emission angle is observed at the low gate voltage of 15V.
(b)Emitters with narrow energy spread : We have measured energy spread of the electrons emitted from the single-tip Si field emitter using a parallel-type energy analyzer. We have also measured energy spread f the electrons emitted from the single-tip Si field emitter using a cylindrical energy analyzer, which is not affected by the emission angle. The energy distribution indicates that some trapped electrons contribute the field emission.
(C)Novels devices with field emitters : We have successfully observed Smith-Purcell radiation at an acceleration voltage of 20 kV and a beam current of 200nA in a visible-to-near infrared light region using a single tip Si field emitter. We have also developed a miniature size x-ray tube using the novel graphite emitter formed by the etching of a graphite substrate. We have demonstrated time-resolved x-ray radiography, whose time resolution is 10μsec.

Report

(5 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (53 results)

All Other

All Publications (53 results)

  • [Publications] V.Ichizli et al.: "Field emission from porous (100) GaP with modified morphology"App.Phys.Lett.. 79. 4016-4019 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Ishizuka et al.: "Laser-assisted electron emission from gated field-emitters"Nuclear Instr.Meth.Phys.Resear.A. 483. 305-309 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shimawaki et al.: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans.Electron Devices. 49. 1665-1668 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] P.Minh et al.: "Carbon nanotube on a Si tip for electron field emitter"Jpn.J.Appl.Phys.. 41. L1409-L1411 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"J.Vac.Sci.Tech.B. 21. 471-473 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Matsumoto et al.: "Point x-ray source using graphite nanofibers and its application to x-ray radiography"Appl.Phys.Lett.. 82. 1637-1639 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Jpn.J.Appl.Phys.. 42. 4048-4050 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa et al.: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Jpn.J.Appl.Phys.. 42. 4051-4053 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Electron emission from porous silicon planar emitters"J.Vac.Sci.Tech.B. 21. 1612-1615 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shimawaki et al.: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam"J.Vac.Sci.Tech.B. 21. 1594-1597 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] P.Minh et al.: "Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters"J.Vac.Sci.Tech.B. 21. 1705-1709 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Field emission from an undoped diamond particle and an undoped diamond film"New Diamond and Frontier Carbon Technology. 13. 275-284 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Matsumoto et al.: "Intense electron emission from graphite nanocraters and their application to time-resolved x-ray radiography"Appl.Phys.Lett.. 84. 1804-1806 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Future concept for compact FEL using a field emission micro-cathode"Nuclear Instr.Meth.Phys.Resear.A. (In press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura et al.: "Photoresponse of a p-type Si field emitter"J.Vac.Sci.Tech.B. (In press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] V.Ichizli: "Field emission from porous (100) GaP with modified morphology"App. Phys. Lett. 79. 4016-4019 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Ishizuka: "Laser assisted electron emission from gated field-emitters"Nuclear Instr. Meth. Phys. Resear.. A483. 305-309 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shimawaki: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans. Electron Devices. 49. 1665-1668 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] P.Minh: "Carbon nanotube on a Si tip for electron field emitter"Jpn. J. Appl. Phys.. 41. L1409-L1411 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"J. Vac. Sci. Tech.. B21. 471-473 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Matsumoto: "Point x-ray source using graphite nanofibers and its application to x-ray radiography"Appl. Phys. Lett.. 82. 1637-1639 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Jpn. J. Appl. Phys.. 42. 4048-4050 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Jpn. J. Appl. Phys.. 42. 4051-4053 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Electron emission from porous silicon planar Emitters"J. Vac. Sci. Tech.. B21. 1612-1615 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shimawaki: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam"J. Vac. Sci. Tech.. B21. 1594-1597 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] P.Minh: "Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters"J. Vac. Sci. Tech.. B21. 1705-1709 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Field emission from an undoped diamond particle and an undoped diamond film"New Diamond and Frontier Carbon Technology. 13. 275-284 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Matsumoto: "Intense electron emission from graphite nanocraters and their application to time-resolved x-ray radiography"Appl. Phys. Lett.. 84. 1804-1806 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Future concept for compact FEL using a field emission micro-cathode"Nuclear Instr. Meth. Phys. Resear., in press. A. (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Photoresponse of a p-type Si field emitter"J. Vac. Sci. Tech., in press. B. (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantileve anode"Journal of Vacuum Science and Technology B. 21. 471-473 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Matsumoto: "Point x-ray source using graphite nanofibers and its application to x-ray radiography"Applied Physics Letters. 82. 1637-1639 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Mimura: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Japanese Journal of Applied Physics. 42. 4048-4050 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Mimura: "Electron emission from porous silicon planar emitters"Journal of Vacuum Science and Technology B. 21. 1612-1615 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Mimura: "Field emission from an undoped diamond particle and an undoped diamond film"New Diamond and Frontier Carbon Technology. 13. 275-284 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Matsumoto: "Intense electron emission from grraphite nanocraters and their application to time-resolved x-ray radiograph"Applied Physics Letters. 84. 1804-1806 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Ishizuka: "Laser-assisted electron emission from gated field-emitters"Nuclear Instruments and Methods in Physics Research A. 483. 305-309 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Shimawaki: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans. Electron Devices. 49. 1665-1668 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Mimura: "Carbon nanotube on a Si tip for electron field emitter"Japanese Journal Applied Physics. 41. L1409-L1411 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Mimura: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Digest of International Microprocess and Nanotechnology Conference. 202-203 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 三村秀典: "半導体電子源のバンドエンジニアリング"応用物理. 71. 1391-1395 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"Journal of Vacuum Science and Technology B. 21. 471-473 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Yokoo: "Experiments of microwave and optical wave radiation using field emission micro cathode"8th International Symposium on Microwave and Optical Technology. (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"14th International. Vacuum Microelectronics Conference. 129-130 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Ishizuka: "Laser-assisted electron emission from gated field-emitters"21th International Free Electron Laser Conference. (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 三村: "結晶性ダイヤモンドからの電界電子放射"電子情報通信学会技術報告. ED2001-183. 63-69 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 石塚: "半導体ティップ微小電子源からのレーザ支援電界放出"電子情報通信学会技術報告. ED2001-171. 49-56 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 三村: "Siティップ上に成長した単結晶ダイヤモンドからの電子放射特性"第62回応用物理学会学術講演会予稿集. 2. 577 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 三村: "半導体エミッタからの電子放射特性"電子情報通信学会論文誌. J83-C. 673-680 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Mimura: "GaAs lateral field emitters for generation of modulation beam using Gunn effect"13th Internatonal Vacuum Microelectronics Conferece. 234-235 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Mimura: "Resonant tunneling cathodes using GaAs/AlAs quantum structures"2000 International Conference on Solid State Devices and Materials. 104-105 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Mimura: "GaAs lateral field emitters for generation of modulation beam using Gunn effect"2nd European Field Emission Workshop. (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 三村: "GaAs系電界放射陰極(II)"第61回応用物理学会学術講演会予稿集. 2. 661 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2001-04-01   Modified: 2018-03-28  

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