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Development of ultra-high-speed LSI with gas-isolated-interconnects and Ta metal gate transistors on SOI substrate

Research Project

Project/Area Number 12305020
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

OHMI Tadahiro  Tohoku University, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)

Co-Investigator(Kenkyū-buntansha) HIRAYAMA Masaki  Tohoku University Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (70250701)
KOTANI Koji  Tohoku University Graduate School of Engineering, Assistant Professor, 大学院・工学研究科, 助教授 (20250699)
SUGAWA Shigetoshi  Tohoku University Graduate School of Engineering, Assistant Professor, 大学院・工学研究科, 助教授 (70321974)
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥41,600,000 (Direct Cost: ¥37,100,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2001: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2000: ¥22,100,000 (Direct Cost: ¥22,100,000)
KeywordsLSI / Ta metal gate / gas-isolated-interconnects / mutual conductance / SOI / interface / trap level / low frequency noise / SOI / BPSG / 無水HF / 銅配線 / 金属基板
Research Abstract

The purpose of this study is to establish ultra-high speed and high integrated giga scale integration technology that the operating frequency of integrated circuit has been accelerated up to 20 GHz though the maximum speed was so far thought less than 1 GHz in order to develop the ideal device structure, process and material to realize ultra acceleration and low electric power consumption of semiconductor integrated circuit. Because of a problem of Gate depletion, a metal gate should be needed. In this study, Ta metal gate technology characterized by the low-temperature process was developed. Especially, using perfect low-temperature processes below 450 ℃, Ta gate FD-SOI MNSFET using the direct silicon nitride as a gate insulator was made for the first time, and it was found that the sub-threshold coefficient had the ideal property of 66 mV/dec, and the interface property was very good. Furthermore, it is clarified that the mutual conductance of this MNSFET was higher than that of conv … More entional MOSFET at high gate bias region, and also the current drive capability was higher than that of conventional MOSFET.
The performance and reliability of the SOI device is strongly influenced to the electric activity defect of Si/SiO_2 (SOI/BOX) interface. In this study, the back gate bias - mutual conductance property of FD-SOI MOSFET was experimentally measured for the first time. Moreover, the formula of the surface potential in the thin film SOI MOS device in consideration of the potential drop between the SOI layer - substrate was newly derived, and also the energy level of the trap level for the SOI/BOX interface corresponding to a kink phenomenon and the high dose SIMOX substrate trap level and its density were clarified.
With miniaturization of a MOS device, the electric power-supply voltage must be reduced in order to improve the performance. Therefore, the reduction of the low frequency noise for improving a S/N ratio becomes very important from now on. In this research, it is clarified that the low frequency noise property of a partial depletion type SOI device was analyzed for the first time, and also the noise spectrum in SOI MOSFET adopted the ELTRAN wafer is purely equivalent to 1/f type in the pre-kink domain. Less

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] Takeo Ushiki: "New Aspects and Mechanism of kink Effect in Static Back-Gate Transconductance Characteristics in Fully-Depleted SOI MOSFET's on High-Dose SIMOX Wafers"IEEE Trans. on Electron Devices. 47・2. 360-366 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroshi Arakawa: "Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 196-197 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Akihiro Morimoto: "Interconnect and Substrate Structure for High Speed Giga-Scale Integration"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 418-419 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Akihiro Morimoto: "Interconnect and Substrate Structure for Gigascale Integration"Jpan. J. Appl. Phys.. 40・1・4B. 3038-3043 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroyuki Shimada: "Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 460-461 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takeo Ushiki: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices : An Effect Of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2"IEEE Trans. on Electron Devices. 147・11. 2201-2207 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takeo Ushiki: "New Aspects and Mechanism of Kink Effect in Static Back-Gate Transconductance Characteristics in Fully-Depleted SOI MOSFET's on High-Dose SIMOX Wafers"IEEE Trans. on Electron Devices. Vol.47, No.7. 360-366 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroshi Arakawa: "Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 196-197 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Akihiro Morimoto: "Interconnect and Substrate Structure for High Speed Giga-Scale Integration"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 418-419 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Akihiro Morimoto: "Interconnect and Substrate Structure for Gigascale Integration"Jpn. J. Appl. Phys. Vol.40・1, No.4B. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroyuki Shimada: "Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer"Extended Abstract of the 2000 International Conferences on Solid State Devices and Materials. 460-461 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takeo Ushiki: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices : An Effect Of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2"IEEE Trans. on Electron Devices. Vol.147, No.11. 2201-2207 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Akihiro Morimoto: "Interconnect and Substrate Structure for Gigascale Integration"Jpn. J. Appl. Phys. 40・1・4B. 3038-3043 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Yuji Saito: "Improvement of MOSFET Subthreshold Leakage Current by its Irradiation with Hydrogen Radicals Generated in Microwave-Excited High-Density Inert Gas Plasma"2001 IEEE international reliability physics symposium. 47・11. 319-326 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Katsuyuki Sekine: "Highly Reliable Ultra thin Silicon Oxide Film Formation at Low Temperature by oxygen Radical Generated in High-Density Krypton Plasma"IEEE TRANSACTIONS ON Electron Devices. 48・8. 1550-1555 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Hiroyuki Shimada: "Tantalum Nitride Metal Gate FD-SOI CMOS Fetes Using Low Resistivity Self-Grown bcc-Tantalum Layer"IEEE TRANSACTIONS ON Electron Devices. 48・8. 1619-1626 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Tadahiro Ohmi: "New Paradigm of Silicon Technology"Proceedings of The IEEE. 89・3. 130-135 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Tatsufumi Hamada: "Thin Inter-Polyoxide Films for Flash Memories Grown at Low Temperature(400℃) by Oxygen Radicals"IEEE Electron Device Letters. 22・9. 423-425 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 大見忠弘: "高性能ポリシリコントランジスタの低温製造技術"第61回応用物理学会学術講演会予稿集. O. 53-57 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takeo Ushiki: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices"IEEE Transactions on Electron Devices. 47・11. 2201-2207 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Yukio Tamai: "Influence of substrate dopant concentration on electrical properties and residual defects in pn junction formed by low-temperature post-implantation annealing"Japanese Journal of Applied Physics. 87・7. 3488-3496 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takahiro Yamaguchi: "Extraction of Peak-to-Peak and RMS Sinusoidal Jitter Using an Analytic Signal Method"Proceedings of the 18^<th> IEEE VLSI Test Symposium. 395-402 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Kunkul Ryoo: "Analysis of Epitaxy of Polysilicon Films on Silicon (100) Wafers Deposited with Enlarged Microwave Plasma"Journal of The Electrochemical Society. 147・10. 3859-3863 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takeo Ushiki: "Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating-Body SOI MOSFETs"IEEE Electron Device Letters. 21・12. 610-612 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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