Project/Area Number |
12305021
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | CHUBU UNIVERSITY (2001-2002) Nagoya Institute of Technology (2000) |
Principal Investigator |
UMENO Masayoshi Chubu University, Engineering, Professor, 工学部, 教授 (90023077)
|
Co-Investigator(Kenkyū-buntansha) |
EGAWA Takashi Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Professor, 極微構造デバイス研究センター, 教授 (00232934)
IDO Toshiyuki Chubu University, Engineering, Professor, 工学部, 教授 (60023256)
WAKITA Kouichi Chubu University, Engineering, Professor, 工学部, 教授 (20301640)
ISHIKAWA Hiroyasu Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Assistant, 極微構造デバイス研究センター, 助手 (20303696)
曽我 哲夫 名古屋工業大学, 工学研究科, 助教授 (20197007)
神保 孝志 名古屋工業大学, 工学研究科, 教授 (80093087)
林 靖彦 名古屋工業大学, 都市循環システム工学専攻, 助手 (50314084)
|
Project Period (FY) |
2000 – 2002
|
Project Status |
Completed (Fiscal Year 2002)
|
Budget Amount *help |
¥41,090,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥5,190,000)
Fiscal Year 2002: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2001: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2000: ¥18,600,000 (Direct Cost: ¥18,600,000)
|
Keywords | Heteroepitaxy / GaAs on Si substrate / GaN on Si substrate / GaAs / Si laser / Si tandem solar cell / GaN / Si light emitting device / Si electronic device / Si MESFET / Si上LED / Si上タンデム太陽電池 / Si上ヘテロエピタキシー / Si / GaAs / エピタキシャルリフトオフ(ELO) / 有機金属気相成長(MOCVD) / GaN / AlGaN / GaN中間層 / 発光ダイオード(LED) / 直列抵抗 |
Research Abstract |
The research results to date on heteroepitaxial GaAs and GaN semiconductors based on Si substrates have been compiled. In addition, research development on silicon based InP and device application of light emitting diode, laser, solar cell, field-effect transistor(HEMT), together with their merit and demerit for industrial application is discussed.
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