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Heteroepitaxy of GaAs and GaN on Si and their device applications

Research Project

Project/Area Number 12305021
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionCHUBU UNIVERSITY (2001-2002)
Nagoya Institute of Technology (2000)

Principal Investigator

UMENO Masayoshi  Chubu University, Engineering, Professor, 工学部, 教授 (90023077)

Co-Investigator(Kenkyū-buntansha) EGAWA Takashi  Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Professor, 極微構造デバイス研究センター, 教授 (00232934)
IDO Toshiyuki  Chubu University, Engineering, Professor, 工学部, 教授 (60023256)
WAKITA Kouichi  Chubu University, Engineering, Professor, 工学部, 教授 (20301640)
ISHIKAWA Hiroyasu  Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Assistant, 極微構造デバイス研究センター, 助手 (20303696)
曽我 哲夫  名古屋工業大学, 工学研究科, 助教授 (20197007)
神保 孝志  名古屋工業大学, 工学研究科, 教授 (80093087)
林 靖彦  名古屋工業大学, 都市循環システム工学専攻, 助手 (50314084)
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥41,090,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥5,190,000)
Fiscal Year 2002: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2001: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2000: ¥18,600,000 (Direct Cost: ¥18,600,000)
KeywordsHeteroepitaxy / GaAs on Si substrate / GaN on Si substrate / GaAs / Si laser / Si tandem solar cell / GaN / Si light emitting device / Si electronic device / Si MESFET / Si上LED / Si上タンデム太陽電池 / Si上ヘテロエピタキシー / Si / GaAs / エピタキシャルリフトオフ(ELO) / 有機金属気相成長(MOCVD) / GaN / AlGaN / GaN中間層 / 発光ダイオード(LED) / 直列抵抗
Research Abstract

The research results to date on heteroepitaxial GaAs and GaN semiconductors based on Si substrates have been compiled. In addition, research development on silicon based InP and device application of light emitting diode, laser, solar cell, field-effect transistor(HEMT), together with their merit and demerit for industrial application is discussed.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (58 results)

All Other

All Publications (58 results)

  • [Publications] M.Adachi, Y.Fujii, T.Egawa, T.Jimbo, M.Umeno: "Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy"Jpn. J. Appl. Phys.. Vol.39,No.4B. L340-L342 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.I.Kazi, T.Egawa, T.Jimbo, M.Umeno: "First Room-Temperature Continuous-WaveOperation of Self-Formed InGaAs Quantum Dot-Like Laser on Si Substrate Grown by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.39,No.7A. 3860-3862 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.I.Kazi, P.Thilakan, T.Egawa, M.Umeno, T.Jimbo: "Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.40,No.8. 4903-4906 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.I.Kazi, T.Egawa, M.Umeno, T.Jimbo: "Growth of InGaAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers"J. Appl. Phys.. Vol.90,No.11. 5463-5468 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Soga, T.Jimbo, G.Wang, K.Otsuka, M.Umeno: "Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication"J. Appl. Phys.. Vol.87,No.5. 2285-2288 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] G.Wang, T.Ogawa, T.Soga, T.Jimbo, M.Umeno: "Passivation of dislocations in GaAs grown on Si substrates by phosphine plasma exposure"Appl. Phys. Lett. Vol.78,No.22. 3463-3465 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Egawa, B.Zhang, N.Nishikawa, H.Ishikawa, T.Jimbo, M.Umeno: "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition"J. Appl. Phys.. Vol.91,No.1. 528-530 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Egawa, T.Moku, H.Ishikawa, K.Ohtsuka, T.Jimbo: "Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.41,No.6B. L663-L664 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] B.Zhang, T.Egawa, H.Ishikawa, Y.Liu, T.Jimbo: "High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si(111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer"Jpn. J. Appl. Phys.. Vol.42,No.3A. L226-L228 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 梅野正義, 神保孝志, 江川孝志: "Si基板上へのGaAs系およびGaN系結晶のヘテロエピタキシーとデバイス応用"応用物理. 第72巻第3号総合報告. 273-283 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Egawa, N.Nakada, H.Ishikawa, M.Umeno: "GaN MESFETs on (111)Si substrate grown by MOCVD"Electronics Letters. Vol.36,No.21. 1816-1818 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Umeno, T.Egawa, H.Ishikawa: "GaN-based optoelectronic denices on sapphire and Si substrates"Materials Science in Semiconductor Processing. 459-466招待論文. 459-466 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Nakaji, T.Egawa, H.Ishikawa, S.Arulkumaran, T.Jimbo: "Characteristics of BC13 Plasma-Etched GaN Schottky Diodes"Jpn. J. Appl. Phys.. Vol.41,No.4B. L493-L495 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 石川博康, 江川孝志, 神保孝志: "AlGaN/GaNヘテロ構造の諸特性と高電子移動度トランジスター"電気学会論文誌C. Vol.122-C,No.6. 910-915 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Egawa, H.Ohmura, H.Ishikawa, T.Jimbo: "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition"App. Phys. Lett.. Vol.81,No.2. 292-294 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Arulkumaran, M.Sakai, T.Egawa, H.Ishikawa, T.Jimbo, T.Shibata, K.Asai, S.Sumiya, Y.Kuraoka, M.Tanaka, O.Oda: "Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates"Appl. Phys. Lett. Vol.81,No.6. 1131-1133 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Arulkumaran, T.Egawa, H.Ishikawa, T.Jimbo: "Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobolity transistors on sapphire and semi-insulating SiC"Appl. Phys. Lett.. Vol.81,No.16. 3073-3075 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N.Nakada, H.Ishikawa, T.Egawa, T.Jimbo, M.Umeno: "MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors"Journal of Crystal Growth. Vol.237-239. 961-967 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Sakai, H.Ishikawa, T.Egawa, T.Jimbo, M.Umeno, T.Shibata, K.Asai, S.Sumiya, Y.Kuraoka, M.Tanaka, O.Oda: "Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE"Journal of Crystal Growth. Vol.244. 6-11 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Adachi, Y. Fujii, T. Egawa, T. Jimbo and M. Umeno: "Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy"Jpn. J. Appl. Phys.. Vol.39, No.4B. L340-L342 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z. I. Kazi, T. Egawa, T. Jimbo and M. Umeno: "First Room-Temperature Continuous-WaveOperation of Self-Formed InGaAs Quantum Dot-Like Laser on Si Substrate Grown by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.39, No.7A. 3860-3862 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z. I. Kazi, P. Thilakan, T. Egawa, M. Umeno and T. Jimbo: "Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.40, No.8. 4903-4906 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z. I. Kazi, T. Egawa, M. Umeno and T. Jimbo: "Growth of InGaAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers"J. Appl. Phys.. Vol.90, No.11. 5463-5468 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Soga, T. Jimbo, G. Wang, K. Otsuka and M. Umeno: "Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication"J. Appl. Phys.. Vol.87, No.5. 2285-2288 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] G. Wang, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: "Passivation of dislocations in GaAs grown on Si substrates by phosphine plasma exposure"Appl. Phys. Lett.. Vol.78, No.22. 3463-3465 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, T. Jimbo and M. Umeno: "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition"J. Appl. Phys.. Vol.91, No.1. 528-530 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka and T. Jimbo: "Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.41, No. 6B. L663-664 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] B. Zhang, T. Egawa, H. Ishikawa, Y. Liu and T. Jimbo: "High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si(111) Using AIN/GaN Multilayers with a Thin AIN/AlGaN Buffer Layer"Jpn. J. Appl. Phys.. Vol.42, No. 3A. L226-228 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Umeno, T. Jimbo and T. Egawa: "Heteroepitaxy of GaAs-and GaN-based materials on Si and their application"OUYOU BUTURI. Vol.72, No.3. 273-283 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Egawa, N. Nakada, H. Ishikawa and M. Umeno: "GaN MESFETs on (111) Si substrate grown by MOCVD"Electronics Letters. Vol.36, No.21. 1816-1818 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Umeno, T. Egawa and H. Ishikawa: "GaN-based optoelectronic denices on sapphire and Si substrates"Materials Science in Semiconductor Processing. (Invitation Paper). 459-466 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Nakaji, T. Egawa, H. Ishikawa, S. Arulkumaran and T. Jimbo: "Characteristics of BC13 Plasma-Etched GaN Schottky Diodes"Jpn. J. Appl. Phys.. Vol.41, No.4B. L493-L495 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Ishikawa, T. Egawa and T. Jimbo: "AlGaN/GaN Hetero structure and High Electron Transistors"IEEJ. Vol.22-C, No. 6. 910-915 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Egawa, H. Ohmura, H. Ishikawa and T. Jimbo: "Demonstration of an InGaN-based light emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition"Appl. Phys. Lett.. Vol.81, No.2. 292-294 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K.Asai, S. Sumiya, Y. Kuraoka, M. Tanaka and O. Oda: "Improved dc characteristics of AlGaN/GaNi high-electron-mobility transistors on AlN/sapphire templates"Appl. Phys. Lett.. Vol.81, No.6. 1131-1133 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Arulkumaran, T. Egawa, H. Ishikawa and T. Jimbo: "Comparative study of drain-current collapse in AlGaN/GaN hign-electron-mobolity transistors on sapphire and semi-insulating SiC"Appl. Phys. Lett.. Vol.81, No.16. 3073-3075 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Nakada, H. Ishikawa, T. Egawa, T. Jimbo and M. Umeno: "MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors"Journal of Crystal Growth. Vol.237-239. 961-967 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno, T. Shibata, K. Asai, S.Sumiya, Y. uraoka, M Tanaka and O. Oda: "Growth of high-quality GaN films on epitaxial AIN/sapphire templates by MOVPE"Journal of Crystal Growth. Vol.244. 6-11 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Nakaji, T.Egawa, H.Ishikawa, S.Arulkumaran, T.Jimbo: "Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes"Jpn. J. Appl. Phys.. Vol.41, No.4B. L493-L495 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Egawa, T.Moku, H.Ishikawa, K.Ohtsuka, T.Jimbo: "Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol.41, No.6B. L663-L664 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 石川博康, 江川孝志, 神保孝志: "AlGaN/GaNヘテロ構造の諸特性と高電子移動度トランジスター"電気学会論文誌C. Vol.122-C, No.6. 910-915 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Egawa, H.Ohmura, H.Ishikawa, T.Jimbo: "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition"Appl. Phys. Lett.. Vol.81, No.2. 292-294 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Arulkumaran, M.Sakai, T.Egawa, H.Ishikawa, I.Jimbo, T.Shibata, K.Asai, S.Sumiya, Y.Kuraoka, M.Tanaka, O.Oda: "Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates"Appl. Phys. Lett.. Vol.81, No.6. 1131-1133 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Arulkumaran, T.Egawa, H.Ishikawa, T.Jimbo: "Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobolity transistors on sapphire and semi-insulating SiC"Appl. Phys. Lett.. Bol.81, No.16. 3073-3075 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Nakada, H.Ishikawa, T.Egawa, I.Jimbo, M.Umeno: "MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors"Journal of Crystal Growth. Vol.237-239. 961-967 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Sakai, H.Ishikawa, T.Egawa, T.Jimbo, M.Umeno, T.Shibata, K.Asai, S.Sumiya, Y.Kuraoka, M.Tanaka, O.Oda: "Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE"Journal of Crystal Growth. Vol.244. 6-11 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] 梅野正義, 神保孝志, 江川孝志: "Si基板上へのGaAs系およびGaN系結晶のヘテロエピタキシーとデバイス応用"応用物理. 第72巻、第3号総合報告. 273-283 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] B.Zhang, T.Egawa, H.Ishikawa, T.Jimbo, M.Umeno: "InGaN Multiple-Quantum Well Light Emitting Diodes on Si(111) Substrates"Physica Status Solid. 188・1. 151-154 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] G.Wang, T.Ogawa, T.Soga, T.Jimbo, M.Umeno: "A detailed study of H_2 plasma passivation effects on GaAs/Si solar cell"Solar. E. Mat. & Solar Cells. 66. 599-605 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Akahori, G.Wang, K.Okumura, T.Soga, T.Jimbo, M.Umeno: "Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application"Solar E. Mat. & Solar Cells. 66. 593-598 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Saravanan, Y.Hayashi, T.Soga, T.Jimbo, M.Umeno: "Growth and characterization of GaAs epitaxial layers on Si/porous/Si by chemical vapordeposition"J. Appl. Phys.. 89. 5215-5218 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] G.Wang, T.Ogawa, T.Soga, T.Jimbo, M.Umeno: "Passivation of dislocations in GaAs on Si by phosphine (PH_3) plasma exposure"Appl. Phys. Lett.. 78. 3463-3465 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] G.Wang, T.Ogawa, F.Kunimasa, M.Umeno, T.Soga, T.Jimbo: "Hydrogen Plasma Passivation of Bulk GaAs and Al GaAs/GaAs Multiple Q. W. Structure on Si"J. Electron. Mater. 30. 845-849 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Soga: "Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition"Applied Physics Letters. 77・24. 3947-3949 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Soga: "Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth"Journal of Grystal Growth. 221. 220-224 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] J.Arokiaraj: "High-quality thin film GaAs bonded to Si using SeS_2 - A new approach for high-efficiency tandem sdolar cells"Solar Energy Materials & Solar Cells. 66. 607-614 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Akahori: "Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application"Solar Energy Materials & Solar Cells. 66. 593-598 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Adachi: "Fabrication of Light Emittingu Diodes with GaInN Multi-Quantum Wells on Si (111) Substrate by MOCVD"Proc.Int.Workshop on Nitride Semiconductors. IPAP CS1. 868-871 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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