| Project/Area Number |
12305023
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
KANETO Keiichi Kyushu Institute of Technology, Graduate School of Life Science and Systems Engineering, Professor, 大学院・生命体工学研究科, 教授 (70124766)
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| Co-Investigator(Kenkyū-buntansha) |
TAKASHIMA Wataru Kyushu Institute of Technology, Graduate School of Life Science and Systems Engineering, Assistant Professor, 大学院・生命体工学研究科, 助手 (10226772)
西谷 龍介 九州工業大学, 情報工学部, 助教授 (50167566)
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| Project Period (FY) |
2000 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥29,990,000 (Direct Cost: ¥27,200,000、Indirect Cost: ¥2,790,000)
Fiscal Year 2002: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2001: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2000: ¥17,900,000 (Direct Cost: ¥17,900,000)
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| Keywords | Nano-interface / Conducting Polymer / Heterojunction / Ballistic Conduction / Schottky Junction / Depletion Layer / Mobility / Ohmic Junction / バリスティック伝導 / ナノテクノロジー / マニピュレータ / 深針 / 導電率 / ナノ領域 / バリスチック伝導 / マニュピレータ / 立体規則性 / 電子顕微鏡 |
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| Research Abstract |
The mechanisms of carrier generation and transportation, and interface generation have been investigated in regioregular polyalkylthiophenes (HT-PATs) as the target material. It was revealed that: (1) Al/HT-PAT/Au diode is constituted by Schottky contact at Al/HT-PAT interface and Ohmic contact at HT-PAT/Au. The thickness of depletion layer was estimated to be several ten nanometers. (2) Mobilities of HT-PATs increased with the decrease of alkyl chain length. The maximum mobility was obtained to be 0.01 cm^2V/s in butyl system. (3) Direct measurements of potential distribution revealed that 95% potential drops at Al/HT-PAT6 interface in Al/HT-PAT6/Au cell. HT-PAT6/Au interface also has 100 kΩ as the contact resistance.
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