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Development of a new specimen thinning technique based on the quantum process.

Research Project

Project/Area Number 12355024
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Physical properties of metals
Research InstitutionHOkkaido University (2003)
The University of Tokyo (2000-2002)

Principal Investigator

ICHINOSE Hideki  Hokkaido Univ., Center for Advanced Research of Energy Conversion Materials, Prof., エネルギー先端工学研究センター, 教授 (30159842)

Co-Investigator(Kenkyū-buntansha) SHIBAYAMA Tamaki  Hokkaido Univ., Center for Advanced Research of Energy Conversion Materials, Prof., 大学院・工学系研究科, 助教授 (10241564)
IKUHARA Yuichi  University of Tokyo, Graduate School of Eng., Prof., 工学部, 教授 (70192474)
須賀 唯知  東京大学, 先端科学研究センター, 教授 (40175401)
TAKAHASHI Heisichiro  Hokkaido Univ., Center for Advanced Research of Energy Conversion Materials, Prof. (80001337)
岩本 知広  東京大学, 工学部附属総合試験所, 助手 (60311635)
Project Period (FY) 2000 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥45,010,000 (Direct Cost: ¥37,300,000、Indirect Cost: ¥7,710,000)
Fiscal Year 2003: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2002: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2001: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2000: ¥11,600,000 (Direct Cost: ¥11,600,000)
Keywordsquantum-process thinning / damage free super thin foil / laser gun / ultra violet laser / damage free surface / thin foil for TEM observation / atomic structure analyzing system / tuned irradiation / 平滑表面 / 波長同調照射 / SiC超薄片 / ダイヤモンド超薄片
Research Abstract

The research is aimed to develop a new specimen thinning technique employing not an accelerated ions but a tuned short wave length electro magnetic wave to cut out atomic bonding on or near the materials surface to thin the specimen layer by layer without any damages on and in the specimen. The new technique is expected to increase the quality and the credibility of indispensable atomic structure information to the nano-technology obtained by a TEM. Apparent advancement in the precise control technique of the laser power, in development of fine focus control system and in high efficiency this technique on various materials were shown. Detailed results are as follows ; (1)A quantum-process thinning system equipped by both an ion gun and a laser gun was developed to acquire the optimum optical condition and energy density of the laser, (2)Both binary elemental covalent handing material (SiC) and a pure covalent bonding material (diamond) were thinned at the fixed wavelength to compare with Si to optimize the thinning condition. (3)A guiding rule to evaluate the size of evaporating material from the surface due to the laser irradiation was obtained. (4)A prototype of the new product was designed. The research is planned to be followed by the JST project on the next stage.

Report

(5 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (107 results)

All Other

All Publications (107 results)

  • [Publications] K.Murakami, M.Saito, E.Takuma, H.Ichinose: "ARHVTEM of the Pd/ZnO heterointerface chemical structure"J.Electron Microscopy. 52. 27-32 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] E.Takuma, H.Ichinose: "Atomic site determination of a high-pulity SiC grain boundary"Philosophical Magazine. 82. 857-866 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] E.Takuma, H.Ichinose, F-R.Chen: "Atomic structure observation of silicon carbide using HRTEM"J.Electron Microscopy. 51. 297-302 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Shibata, F.Oba, T.Yamamoto, T.Sakuma, Y.Ikuhara: "Grain-boundary faceting at a Σ=3, [110]/{112} grain boundary in a cubic zirconia bicrystal, Phil.Mag"Philosophical Magazine. 83. 2221-2246 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sakuma, Y.Ikuhara, T.Yamamoto, H.Yoshida: "Twords Grain Boundary Engineering in Advanced Ceramics"Ann.Chim.Sci.Mater. 27. S345-S356 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Hidehiro Yoshida, Yuichi Ikuhara, Taketo Sakuma: "Grain boundary electronic structure related to the high-temperature creep resistance in polycrystalline Al_2O_3"Acta.Material. 85. 2955-2966 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Torimoto, J.P.Reyes, K.Iwasaki, H.Takahashi: "Preparation of Novel Silica-Cadmium Sulfide Composite Nanoparticles Having Adjustable Void Space by Size-Selective Photoetching"J.of American Chemical Society. 125. 316-317 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Matsuura, M.Kudoh, H.Kinoshita, H.Takahashi: "Precipitation of Si particles in a super-rapidly solidified Al-Si hypereutectic alloy"Materials Chemistry and Physics. 81. 393-395 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Sueishi, N.Sakaguchi, T.Shibayama, H.Kinoshita, H.Takahashi: "Radiation-induced segregation and precipitation behaviors around cascadeclusters under electron irradiation"J.of Electron Microscopy. 52. 63-68 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Murakami, M.Saito, E.Takuma, H.Ichinose: "ARHVTEM of the Pd/ZnO heterointerface chemical structure"J.Electron Microscopy. 52. 27-32 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] E.Takuma, H.Ichinose: "Atomic site determination of a high-pulity SiC grain boundary"Philosophical Magazine. 82. 857-866 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] E.Takuma, H.Ichinose, F-R.Chen: "Atomic structure observation of silicon carbide using HRTEM"J.Electron Microscopy. 51. 297-302 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Shibata, F.Oba, T.Yamamoto, T.Sakuma, Y.Ikuhara: "Grain-boundary faceting at a Σ=3, [110]/{112} grain boundary in a cubic zirconia bicrystal"Philosophical Magazine. 83. 2221-2246 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sakuma, Y.Ikuhara, T.Yamamoto, H.Yoshida: "Towards Grain Boundary Engineering in Advanced Ceramics"Ann.Chim.Sci.Mater. 27. S345-S356 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Hidehiro Yoshida, Yuichi Ikuhara, Taketo Sakuma: "Grain boundary electronic structure related to the high-temperature creep resistance in polycrystalline Al_2O_3."Acta.Material. 85. 2955-2966 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Torimoto, J.P.Reyes, K.Iwasaki, H.Takahashi: "Preparation of Novel Silica-Cadmium Sulfide Composite Nanoparticles Having Adjustable Void Space by Size-Selective Photoetching"J.of Americam Chemical Soc.. 125. 316-317 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Matsuura, M.Kudoh, H.Kinoshita, H.Takahashi: "Precipitation of Si particles in a super-rapidly solidified Al-Si hypereutectic alloy"Materials Chemistry and Physics. 81. 393-395 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Sueishi, N.Sakaguchi, T.Shibayama, H.Kinoshita, H.Takahashi: "Radiation-induced segregation and precipitation behaviors around cascadeclusters under electron irradiation"J.of Electron Microscopy. 52. 63-68 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Murakami, M.Saito, E.Takuma, H.Ichinose: "ARHVTEM of the Pd/ZnO heterointerface chemical structure"J.Electron Microscopy. 52. 27-32 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] E.Takuma, H.Ichinose: "Atomic site determination of a high-pulity SiC grain boundary"Philosophical Magazine. 82. 857-866 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Watanabe, M.Hoshino, S.Ohnuki, H.Takahashi, N.Q.Lam: "Temporal fluctuation and its power law in the crystalline-to-glass transition during electron irradiation"Philosophical Magazine. 83. 2599-2619 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Torimoto, J.P.Reyes, K.Iwasaki, H.Takahashi: "Preparation of Novel Silica-Cadmium Sulfide Composite Nanoparticles having Adjustable Void Space by Size-Selective Photoetching"J.of Americam Chemical Society. 125. 316-317 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Matsuura, M.Kudoh, H.Kinoshita, H.Takahashi: "Precipitation of Si particles in a super-rapidly solidified Al-Si hypereutectic alloy"Materials Chemistry and Physics. 81. 393-395 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Sueishi, N, Sakaguchi, T.Shibayama, H.Kinoshita, H.Takahashi: "Radiation-induced segregation and precipitation behaviors around cascadeclusters under electron irradiation"J.of Electron Microscopy. 52. 63-68 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] E.Takuma, H.Ichinose: "Atomic site determination of a high-pulity SiC grain boundary"Phil. Mag.. 82. 857-866 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] E.Takuma, H.Ichinose: "Chemical Structure Analysis of a Σ9 Grain Boundary in SiC"MRS Symp. Proc. 727. 53-58 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] E.Takuma, H.Ichinose, F-R.Chen: "Atomic structure observation of silicon carbide using HRTEM"J. Electron Microscopy. 51. 297-302 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] E.Takuma, H.Ichinose, S.Sanorpim, K.Onabe: "Morphology and Atomic Structure of Grain Boundaries in GaN grown by MOVPE"MRS Symp. Proc.. 727. 117-122 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Ichinose, H.Sawada, E.Takuma: "HRTEM and EELS analysis of Diamond and Silicon Carbide Grain Boundary"Ann Chim Sci Mat. 27s1. 15-20 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Sawada, H.Ichinose, M.Kohyama: "Imaging of a single atomic column in silicon grain boundary"J. Electron Microscopy. 51. 353-358 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] J.Y.Yan, H.lchinose, Fu-Rong Chen, J.J.Kai, E.Takuma: "Atomic and Electronic Structure of Interfaces at SiC Studied by lndirect Super HRTEM and Electron Spectroscopy"MRS Symp. Proc.. 727. 169-176 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Sanorpim, E.Takuma, R.Katayama, K.Onabe, H.Ichinose, Y.Shirakawa: "Reduction of Plannar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001)Substarates by MOVPE"Phys. Stat. Sol.. 234. 840-844 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Sanorpim, E.Takuma, H.Ichinose, Y.Shiraki: "Laterally Overgrown GaN on Patterned GaAs(001)Substrates by MOVPE"Phys. Stat. Sol.. 192. 446-452 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Kimura, Y.Azuma, T.Suzuki, T.Saito, Y.Ikuhara: "Microstructure of diamond-like carbon films prepared by cathodic arc deposition"Dia. Rel. Mater.. 11. 1436-1440 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Hidehiro Yoshida, Yuichi Ikuhara, Taketo Sakuma: "Grain boundary electronic structure related to the high-temperature creep resistance in polycrystalline Al_2O_3"Acta. Material.. 50. 2955-2966 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Kuwabam, J.Katamura, Y.Ikuhara, T.Sakuma: "Influence of Interaction between Neighboring Oxygen Ions on Phase Stability in Cubic Zirconia"J. Am. Ceram. Soc.. 85. 2557-2561 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Araki, T.Niwa, Y.Yamada, I.Hirabayashi, J.Shibata, Y.Ikuhara, K.Kato, T.Kato, T.Hirayama: "Growth model and the effect of CuO nanocrystallites on the properties of chemically derived epitaxial thin film of YBa_2Cu_3O_<7-x>"J. Appl. Phys. 92. 6. 3318-3325 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Sato, F.Oba, T.Yamamoto, Y.Ikuhara, T.Sakuma: "Current-Voltage Characteristic across[0001]Twist Boundaries in Zinc Oxide Bicrystals"J. Am. Ceram. Soc.. 85. 2142-2144 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Shibata, F.Oba, T.Yamamoto, Y.Ikuhara, T.Sakuma: "Atomic structure and solute segregation of a・=3[110]/{111}grain boundary in an yttria-stabilized cubic zirconia bicrystal"Phil. Mag. Let.. 82. 393-400 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Yoshida, T.Yamamoto, Y.Ikuhara, T.Sakuma: "A change in the chemical bonding strength and high-temperature creep resistance in Al_2O_3 with lanthanoid oxide doping"Phil. Mag. A.. 82. 511-525 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Sasaki, M.Nakano, Y.Ikuhara, T.Sakuma: "Pre-holed tensile specimens for superplastic Y-TZP ceramics"J. Mater. Sci.. 37. 3307-3313 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Fumiyasu Oba, Takahisa Yamamoto, Yuichi Ikuhara, Isao Tanaka, Hirohiko Adachi: "First-Principles Calculation of Impurities and Native Defects in ZnO"Mater. Trans.. 43. 1439-1443 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsuyuki Matsunaga, Yuji Iwamoto, Yuichi Ikuhara: "Atomic Structure and Diffusion in Amorphous Si-B-C-N by Molecular Dynamics Simulation"Mater. Trans.. 43. 1506-1511 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Junko Shibata, Hironori Yamamoto, Sergei A.kulinich, Takahisa Yamamoto, Kazuo Terashima, Toyonobu Yoshida, Yuichi Ikuhara: "Transmission Electron Microscopic Studies of LiNb_<0.5>Ta_<0.5>O_3 Films Deposited on Sapphire Substrates by Thermal Plasma Spray CVD(Microstructure of LiNb_<0.5>Ta_<0.5>O_3 Films Deposited on Sapphire Substrates by Thermal Plasma Spray CVD)"Mater. Trans.. 43. 1512-1516 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takahisa Yamamoto, Fumiyasu Oba, Yuichi Ikuhara, Taketo Sakuma: "Current-Voltage Characteristics Across Small Angle Symmetric Tilt Boundaries in Nb-Doped SrTiO_3 Bicrystals"Mater. Trans.. 43. 1537-1541 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Hitoshi Nishimura, Yuichi Ikuhara, Ken'ichi Ota, Giuseppe Pezotti: "Internal Friction Analysis of CaO-Doped Silicon Carbides"Mater. Trans.. 43. 1552-1556 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kazumi Nakagawa, Giuseppe Pezotti, Ken'ichi Ota, Yuichi Ikuhara, Hidehiro Yoshida, Taketo Sakkuma: "Internal Friction Behavior of Alumina Polycrystals with Engineered Grain Boundaries"Mater. Trans.. 43. 1557-1560 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Tsuyoshi Watanabe, Hidehiro Yoshida, Yuichi Ikuhara, Tateto Sakuma, Hiroyuki Muto, Mototsugu Sasaki: "Grain Boundary Sliding and Atomic Structures in Alumina Bicrystals with[0001] Symmetric Tilt Grain Boundaries"Mater. Trans.. 43. 1561-1565 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Hidehiro Yoshida, Yorinobu Takigawa, Yuichi Ikuhara, Taketo Sakuma: "Effect of Chemical Bonding State on High-temperature Plastic Flow Behavior in Fine-grained, Polycrystalline Cation-doped Al_2O_3"Mater. Trans.. 43. 1566-1572 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Akhadejdamrong, A.Mitsuo, C.Iwamoto, T.Yamamoto, Y.Ikuhara, T.Aizawa: "Formation of Protection Layer during Oxidation of Al-implanted TiN Coating"Mater. Trans.. 43. 1291-1297 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yuichi Ikuhara: "Towards New Transmission Electron Microscopy in Advanced Ceramics"J. Ceram. Soc. Jpn.. 110. 139-145 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] G-D.Zhan, Y.Ikuhara, M.Mitomo, R-J.Xie, T.Sakuma, A.K.Mukherjee: "Microstructural Analysis of liquid-phase-sintered・-SiC"J. Am. Ceram. Soc.. 85. 430-436 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Nakamura, T.Yamamoto, Y.Ikuhara: "Direct Observation of Basal Dislocation in Sapphire by HRTEM"Acta. Mater.. 50[1]. 101-108 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] ZL.Hong, H.Yoshida, Y.Ikuhara, T.Sakuma, T.Nishimura, M.Mitomo: "The effect of additives on sintering behavior and strength retention in silicon nitride with RE-disilicate"J Eur. Ceram. Soc.. 22:(4). 527-534 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Aizawa, T.Akhadejdamrong, C.Iwamoto, Y.Ikuhara, A.Mitsuo: "Self-Lubrication of Chlorine-Implanted TiN Coating"J.Am. Ceram. Soc.. 85. 21-248 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Shibata, M.Morishige, T.Yamamoto, Y.Ikuhara, T.Sakuma: "Stacking-fault formation in [001]small-angle symmetric tilt grain boundaries in cubic zirconia bicrystals"Phil. Mag. Let.. 82. 175-181 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Araki, I.Hirabayashi, J.Shibata, Y.Ikuhara: "High critical current density scheme of YBa_2Cu_3O_<7-x> films by metalorganic deposition using trifluoroacetates"Supercond. Sci. Technol.. 15. 913-916 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.H.Ikuhara, X.L.Ma, Y.Iwamoto, Y.Ikuhara, K.Kikuta, S-I.Hirano: "Interfaces between solution-derived LiMn_2O_4 thin films and MgO and Au/MgO substrates"J. Mater. Res.. 17. 358-366 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Suga: "Lead-free roadmap 2002 -Roadmap 2002 for commercialization of lead-free solder-"Care Innovation '02, Proceedings.. 1(CD). 14.3 (2002)

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      2002 Annual Research Report
  • [Publications] H.Okada, T.Nara, M.M.R.Howlader, H.Takagi, R.Maeda, T.Itoh, T.Suga: "Sealing using sufrace activated bonding method"Eurosensors XVI, Abstract. 1. 137-138 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Itoh, S.Kawamura, K.Kataoka, T.Suga: "Electroplated Ni microcantilevers for fritting-contact MEMS probe card"Eurosensors XVI, Abstract. 1. 139-140 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Suga, T.Itoh, Z.H.Xu, M.Tomita, A.Yamauchi: "Surface activated bonding for new flip chip and bumpless interconnect systems"IEEE, Electronic Components & Technology Conf. (ECTC), 52nd., Proceedings. 1. 105-111 (2002)

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      2002 Annual Research Report
  • [Publications] Q.Wang, Z.H.Xu, M.M.R.Howlader, T.Itoh, T.Suga: "Reliability and microstructure of Au-Al and Au-Cu direct bonding fabricated by the surface activated bonding"IEEE, Electronic Components & Technology Conf.(ECTC), 52nd., Proceedings. 1. 915-919 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Suga, A.Takahashi, M.M.R.Howlader, K.Saijo, S.Oosawa: "A lamination technique of LCP/Cu for electronic packaging"IEEE, Int.Conf.on Polymers and Adhesives in Microelectronics and Photonics, 2nd, Proceedings. 1. 177-182 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Z.H.Xu, M.Tomita, T.Itoh, T.Suga: "Flip-chip bonding using SAB technique at low temperature"IEEE, Int.Symp.on High Density Packaging and Component Failure Analysis in Electronics Manufacturing, 5th, (HDP'2002), Proceedings. 1. 95-98 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Suga, K.Saito: "A new bumping process using lead-free solder paste"IEEE, Int. Symp. on High Density Packaging and Component Failure Analysis in Electronics Manufacturing, 5th, (HDP'2002), Proceedings. 1. 1-3 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Saito, T.Itoh, T.Suga: "A new bumping process using non-residue and lead-free solder paste"Int. Conf. on Electronics Packaging (ICEP), 2002, Proceedings. 1. 99-103 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Suganuma, T.Tsukui, T.Suga, T.Makimoto: "JIEP low temperature lead-free soldering Project"Int. Conf. on Electronics Packaging (ICEP), 2002, Proceedings. 1. 74-78 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Otsuka, C.Ueda, Y.Odate, T.Usami, T.Suga: "Study of beyond GHz signal integrity under TEM wave mode analysis in multi-channel transmission lines"Int. Conf. on Electronics Packaging (ICEP), 2002, Proceedings. 1. 295-300 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Odate, T.Usami, K.Otsuka, T.Suga: "Transmission performance inteconnections designed by FDTD"Int. Conf. on Electronics Packaging (ICEP), 2002, Proceedings. 1. 307-310 (2002)

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      2002 Annual Research Report
  • [Publications] T.Suga, T.Itoh, A.Shigetou: "Next generation electronic packaging and bumpless interconnection"Int. Symp. on Microeletronics and Packaging, 1st., (ISMP2002), Proceedings. 1. 247-252 (2002)

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      2002 Annual Research Report
  • [Publications] K.Kataoka, T.Itoh, K.Okumura, T.Suga: "Low contact force probing on copper electrodes"Int. Test Conf. (ITC), 2002. 1. 424-429 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Kataoka, S.Kawamura, T.Itoh, K.Ishikawa, H.Honma, T.Suga: "Electroplating Ni micro-cantilevers for low contact-force IC probing"Sensors and Actuators. 1. 116-121 (2002)

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      2002 Annual Research Report
  • [Publications] K.Saito, Y.Akiyama, T.Usami, K.Otsuka, T.Suga: "Replacement of bypass capacitor to transmission line for high frequency power supply system"VLSI Packaging Workshop of JAPAN, 6th, Technical Digest. 1. 137-144 (2002)

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      2002 Annual Research Report
  • [Publications] T.Suga: "Room temperature joining of inorganic materials and its application in microelectonics"CIMTEC '02-10th Int. Ceramics Congress & 3rd Forum on New Materials, Abstract. 1. 59 (2002)

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  • [Publications] 梅田靖, 大橋敏二郎, 岸田俊二, 木村文彦, 須賀唯知, 高田祥三, 福田敏男, 山際康之, 古川勇二: "ライフサイクルデザイン指標の体系化-日本学術会議生産システム学専門委員会の議論を中心として-第1報:基本的な考え方"エコデザインジャパンシンポジウム論文集'02. 1. 60-63 (2002)

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  • [Publications] 梅田靖, 大橋敏二郎, 岸田俊二, 木村文彦, 須賀唯知, 高田祥三, 福田敏男, 山際康之, 古川勇二: "ライフサイクルデザイン指標の体系化-日本学術会議生産システム学専門委員会の議論を中心として-第2報:企業におけるアプローチ"エコデザインジャパンシンポジウム論文集'02. 1. 64-67 (2002)

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  • [Publications] 冨田誠, Z.H.Xu, 伊藤寿浩, 須賀唯知: "表面活性化による低温フリップチップ接合"マイクロエレクトロニクスシンポジウム、第12回、(MES2002)、論文集. 1. 23-26 (2002)

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  • [Publications] 伊藤寿浩, 河村晋吾, 片岡憲一, 須賀唯知: "マイクロマシンプローブによる低接触カコンタクト"マイクロエレクトロニクスシンポジウム、第12回、(MES2002)、論文集. 1. 103-106 (2002)

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  • [Publications] 藤野真久, 宮澤薫一, 須賀唯知: "C60ナノウィスカの加熱ホルダによるTEM観察"応用物理学会学術講演会講演予稿集. 1. 1187 (2002)

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  • [Publications] 河村晋吾, 片岡憲一, 伊藤寿浩, 須賀唯知: "フリッティングを用いた低接触力MEMSプローブカードのためのマイクロカンチレバーの開発(第2報)マイクロカンチレバーの特性"精密工学会学術講演会講演論文集. 1. 335 (2002)

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  • [Publications] 片岡憲一, 伊藤寿浩, 須賀唯知: "MEMSプローブカードのためのフリッティングコンタクト(第6報)銅電極のフリッティング特性"精密工学会学術講演会講演論文集. 1. 336 (2002)

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  • [Publications] 岡田浩尚, 前田龍太郎, 高木秀樹, M.M.R.Howlader, 伊藤寿浩, 須賀唯知: "表面活性化法による封止接合(第2報)-評価用Siマイクロ構造の設計と製作-"精密工学会学術講演会講演論文集. 1. 325 (2002)

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  • [Publications] 須賀唯知: "常温接合の最新動向"日本金属学会分科会シンポジウム予稿 「接合・溶接技術の最前線」. 1. 18 (2002)

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  • [Publications] D.Takeuchi, H.Watanabe, S.Yamanaka, H.Sawada, H.Ichinose, T.Sekiguchi, H.Okushi: "Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy"Solid State Phenomena. 78. 197-204 (2001)

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  • [Publications] D.Takeuchi, H.Watanabe, S.Yamanaka, H.Sawada, H.Ichinose, T.Sekiguchi, H.Okushi: "Origin of band-A emission in homoepitaxial diamond films"Diamond and related materials. 10. 526-530 (2001)

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  • [Publications] H.Sawada, H.Ichinose: "Structure of {112} Σ3 boundary in silicon and diamond"Scripta Materialia. 44. 2327-2330 (2001)

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  • [Publications] T.Kuzumaki, Y.Takamura, H.Ichinose, Y.Horiike: "Structural change at the carbon-nanotube tip by field emission"Appl. Phys. Lett.. 78. 3699-3701 (2001)

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  • [Publications] D.Takeuchi, H.Watanabe, S.Yamanaka, H.Okushi, H.Sawada, H.Ichinose, T.Sekiguchi, KKajimura: "Origin of band A emission in diamond thin films"Phys. Rev. B. 63. 245-328 (2001)

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  • [Publications] H.Sawada, H.Ichinose, H.Watanabe, D.Tateuchi, H.Okushi: "Structure of unepitaxial crystallites in a homoepitaxial diamond film"Diamond and elated materials. 10. 2096-2098 (2001)

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  • [Publications] F-R.Chen, H.Ichinose, J.J.Kai, L.Chang: "Extension of HRTEM resolution : Solving structures of grain boundary and interface using gerchberg-saxton algorithm and blind decombolution"Microscopy and Microanalysis. 7. 242-243

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  • [Publications] H.Ichinose, H.Sawada, E.Takuma, H.Saito: "Grain boundary structure analysis of covalent bonding materials by atomic resolution transmission electron microscopy"Microscopy and Microanalysis. 7. 276-277 (2001)

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  • [Publications] H.Sawada, H.Ichinose, H.Watanabe, D.Takeuchi, H.Okushi: "Cross-sectional TEM study of unepitaxial crystallites in a homoepitaxial diamond film"Diamond and Related materials. 10. 2030-2034 (2001)

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  • [Publications] T.Kuzumaki, H.Sawada, H.Ichinose, Y.Horiike: "Selective processing of individual carbon nanotubes using dual-nanomanipulator installed in transmission electron microscope"Appl. Phys. Lett.. 79. 4580-4582 (2001)

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  • [Publications] B.Xu, H.Jia, H.Zhou, H.Ichinose, C.Iwamoto: "Transformation of Active Carbon to Onion-like fullerens Under electron Beam Iradiation"Mat. Res. Soc. Symp. Proc.. 675. W75.1 (2001)

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  • [Publications] A.Nagayama, R.Katayama, H.Sawada, E.Takuma, J.Wu, K.Onabe, H.Ichinose, Y.Shiraki: "Surface Modification of Cubic GaN Buffer Layer Grown by Metalorganic Vapor Phase Epitaxy"MRS Symp. Proc. Of III-V Nitrides. G3. 201 (2001)

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  • [Publications] A.Nagayama, H.Sawada, E.Takuma, R.Katayama, J.Wu, K.Onabe, H.Ichinose, Y.Shiraki: "MICRO-EELS Study of a Cubic GaN FILM grown on GaAs(001) substrate"Extended Abstract of The Fourth International Conference on Nitride Semiconductor (2001), B9.5, Denver, July 2001. B9. 5 (2001)

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  • [Publications] 磯部大介, 石井俊之, 井野博満, 小田克郎, 沢田英敬, 市野瀬英喜: "Zr添加による液体急冷Fe-Nd-B合金の微細化と磁気特性"日本金属学会誌. 65. 1008-1013 (2001)

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  • [Publications] H.Ichinose: "Crystal Interface and high-resolution electron Microscopy"Proc.Advanced Materials 2000. 1. 11-20 (2000)

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  • [Publications] S.Koh,T.Kondo,T.Ishiwada,H.Ichinose,I.Shoji and R.Ito: "Characterization of Sublattice-Reversed GaAs by Reflection High Energy Electron Diffraction and Transmission Electron"Physica E. E7. 876-880 (2000)

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  • [Publications] H.Ichinose and M.Saito: "Change in Atomic Bonding due to hydrogen-Bonding into MgO/Pd Interface"Proc Electronics Goes Green2000+. 1. 335-338 (2000)

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  • [Publications] B.S.Xu,L.Lu,X.G.Zhao,H.S.Jia,W.Liang,S.I.Tanaka and H.Ichinose: "Migration and bonding of Pt nanoparticles by electron beam irradiation"Int.Kuming Symp. On Microscopy. 1. 71-74 (2000)

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  • [Publications] T.Kuzumaki,O.Ujiie,H.Ichinose and K.Ito: "Mechanical Characteristics and preparation of Carbon Nanotube Fiber-reinforced Ti Composite"Advanced Engineering Materials. 2. 416-418 (2000)

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  • [Publications] H.Ichinose,H.Sawada and E.Takuma: "Atomic resolutionTEM analysis of grain boundaries in covalent bonding materials"Proc.Advanced Materials 2000. 1. 39-40 (2000)

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  • [Publications] 市野瀬英喜: "超高圧電子顕微鏡-世界1の高分解能を実現したテクノロジーに迫る"電子顕微鏡. 55. 265-268 (2000)

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  • [Publications] H.Ichinose: "Una Iente di quattro piani"Oggi N newton. 6. 130-137 (2000)

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  • [Publications] 市野瀬英喜: "Newton(超高圧電子顕微鏡-世界1の高分解能を実現したテクノロジーに迫る)"ニュートンプレス. 8/156 (2000)

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Published: 2000-04-01   Modified: 2016-04-21  

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