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Fabrication of nitride-based zero dimensional structure by mass-transport and green laser diode

Research Project

Project/Area Number 12450017
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionMeijo University

Principal Investigator

AKASAKI Isamu  Meijo Univ./Nagoya Univ., Faculty of Science and Technology, Professor, 理工学部, 教授 (20144115)

Co-Investigator(Kenkyū-buntansha) AMANO Hiroshi  Meijo Univ., Faculty of Science and Technology, Professor, 理工学部, 助教授 (60202694)
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥14,300,000 (Direct Cost: ¥14,300,000)
Fiscal Year 2001: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 2000: ¥9,800,000 (Direct Cost: ¥9,800,000)
KeywordsGroup III nitride semiconductors / Mass transport / Laser diode / Metalorganic vapor phase epitaxy / Green laser diode / Low density threading dislocation
Research Abstract

In the growth of group III nitride on sapphire substrate by metalorganic vapor phase epitaxy, low temperature buffer layer technique, which was established by us in 1986, is commonly used. High-brightness blue and green light emitting diodes and violet laser diode have been commercialized based on the low temperature buffer layer technique. In these devices, GaInN is used as the active layer. Compositional fluctuation of the GaInN is thought to form by the difference of the surface energy. The size of each domains formed by the compositional fluctuation is thought to be a few nm to tens of nm range. High In compositional domain formed by this fluctuation is thought to act as a hole capture center, thereby screening the effect of high density threading dislocations. This domain structure is thought to be effective to fabricate high-efficiency light emitting diode. However, this domain seriously affects the performance of the laser diode by widening the gain spectrum, thud decreasing the peak gain. Large piezoelectric field which separates electrons and holes inside the well layer also prohibits realization of green laser diode based on nitride semiconductors.
In the first fiscal year, luminescent property of GaInN based multi quantum well structure was studied in detail. We found that no compositional fluctuation occurred in our sample. In the second fiscal year, we found that luminescent property of GaInN-based multi quantum well was not affected by the compositional fluctuation, but was affected by the surface depletion. This new finding is very important as a mile stone of the fabrication of green laser diode based on group III nitride semiconductors.

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (111 results)

All Other

All Publications (111 results)

  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, H.Amano, I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C.Wetzel, H.Amano, I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequence for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C.Pernot, A.Hirano, M.Iwaya, T.Detchprohm, H.Amano, I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-L389 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Iwaya, S.Terao, N.Hayashi, T.Kashima, T.Detchprohm, H.Amano, I.Akasaki, A.Hirano, C.Pernot: "High-Quality Al_xGa_<1-x>N Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Nitta, T.Kashima, M.Kariya, Y.Yukawa, S.Yamaguchi, H.Amano, I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Benamara, L.Weber, J.H.Mazur, W.Swider, J.Washburn, M.Iwaya, I.Akasaki, H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I.Akasaki, S.Kamiyama, T.Detchprohm, T.Takeuchi, H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C.Wetzel, T.Takeuchi, H.Amano, I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tabuchi, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] P.N.Hai, W.M.I.Chen, A Buyanova, B.Monemar, H.Amano, I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN: An optically detected Magnetic-resonance study"Physical Review -Series B-. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, T.Takeuchi, H.Amano, I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, T.Takeuchi, H.Amano, I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Iwaya, S.Terao, N.Hayashi, T.Kashima, H.Amano, I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, H.Amano, I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Nitta, M.Kariya, T.Kashima, S.Yamaguchi, H.Amano, I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tabuchi, K.Hirayama, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by -ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sato, M.Iwaya, K.Isomura, T.Ukai, S.Kamiyama, H.Amano, I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.P.Bergman, B.Monemar, G.Pozina, B.E.Sernelius P.O.B.E.Holtz, H.Amano, I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, S.Yamaguchi, H.Amano, I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.Hayashi, S.Kamiyama, T.Takeuchi, M.Iwaya, H.Amano, I.Akasaki, S.Watanabe, Y.Kaneko, N.Yamada: "Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer"Jpn.J.Appl.Phys.. 39. 6493-6495 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Nitta, T.Kashima, R.Nakamura, M.Iwaya, H.Aman, I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, M.Iwaya, S.Nitta, H.Amano, I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C.Wetzel, T.Takeuchi, H.Amano, I.Akasaki: "Quantized states in Ga〜1〜-〜xIn〜xN/GaN heterostructures and the model polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tabuchi, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Amano, I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-Ill Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] P.N.Hai, W.M.Chen, I.A.Buyanova, B.Monemar, H.Amano, I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Nitta, T.Kashima, R.Nakamura, M.Iwaya, H.Amano, I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, T.Kashima, Kosaki, Y.Yukawa, H.Amano, I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Wagner, I.A.Buyanova, N.Q.Thinh, W.M.Chen, B.Monemar, J.L.Lindstrom, H.Amano, I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.A.Shapiro, Y.Kim, H.Feick, E.R.Weber, P.Perlin W.Yang, I.Akasaki, H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structure n applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C.Wetzel, M.Kasumi, H.Amano, I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al_xGa_<1-x>N Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Monemar, B., Paskov, P., P.Pozina, G., Paskova, T., Bergman, J.P., Iwaya, M., Nitta, S., Amano, H., Akasaki, I.: "Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation"PHYSICA STATUS SOLIDI B BASIC RESEARCH. 228. 157-160 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I.: "Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport"JOURNAL OF CRYSTAL GROWTH. 230. 473-476 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S Amano, H., Akasaki, I.: "Luminescence of InGaN/GaN Multiple Quantum wells Grown by Mass-Transport"MATRIALS SCIENCE FORUM. 353-356. 791-794 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C., Kamiyama, S., Amano, H., Akasaki, I.: "Quantized states in homogenous polarized GaInN/GaN quantum wells"SPRINGER PROCEEDINGS IN PHYSICS. 87. 1541-1542 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C., Amano, H., Akasaki, I.: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequence for Device Design"JAPANESE JOURNAL OF APPLIED PHYSICS. 39. 2425-2427 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C., Detchprohm, T., Takeuchi, T., Amano, H., Akasaki, I.: "Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices"JOURNAL OF ELECTRONIC MATERIALS. 29. 252-255 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Yamaguchi, M. Kariya, S. Nitta, H. Amano and I. Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorgamc Vapor Phase Epitaxy"Jpn. J. Appl. Phys.. 39. 2385-2388 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C. Wetzel, H. Amano and I. Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn. J. Appl. Phys.. 39. 2425-2427 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn. J. Appl. Phys.. 39. L387-389 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Iwaya, S. Terao, N. Hayashi, T. shima, T. Kashima, Detchprohm, H. Amano, I. Akasaki, A. Hirano and C. Pernot: "High-Quality Al_xGa_<1-x>N Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J. Nitride Semicond. Res.. 5S1. W1.10 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Nitta, T. Kashima, M. Kariya, Y. Yukawa, S. Yamaguchi, H. Amano and I. Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J. Nitride Semicond. Res.. 5S1. W2.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Benamara, L. Weber, J. H. Mazur, W. Swider, J. Washburn, M. Iwaya, I. Akasaki and H. Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J. Nitride Semicond. Res.. 5S1. W5.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi and H. Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J. Nitride Semicond. Res.. 5S1. W6.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C. Wetzel, T. Takeuchi, H. Amano and I. Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGalnN Heterostructures"MRS Internet J. Nitride Semicond. Res.. 5S1. W12.4 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tabuchi, Y. Takeda, T. Takeuchi, H. Amano, I. Akasaki: "Characterization of Initial Growth Stage of GalnN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] P. N. Hai, W. M. I. Chen, A Buyanova, B. Monemar, H. Amano, I. Akasaki: "Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic-resonance study"Physical Review -Series B-. 62. R10607-10609 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, I. Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, I. Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Iwaya, S. Terao, N. Hayashi, T. Kashima, H. Amano, I. Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, I. Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Nitta, M. Kariya, T. Kashima, S. Yamaguchi, H. Amano, I. Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tabuchi, K. Hirayama, Y. Takeda, T. Takeuchi, H. Amano, I. Akasaki: "Characterization of initial growth stage of GalnN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sato, M. Iwaya, K. Isomura, T. Ukai, S. Kamiyama, H. Amano, I. Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. P. Bergman, B. Monemar, G. Pozina, B. E. Sernelius, P. O. B. E. Holtz, H. Amano, I. Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G. Pozina, J. P. Bergman, B. Monemar, S. Yamaguchi, H. Amano, I. Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Hayashi, S. Kamiyama, T. Takeuchi, M. Iwaya, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko and N. Yamada: "Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer"Jpn. J. Appl. Phys. 39. 6493-6495 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Nitta, T. Kashima, R. Nakamura, M. Iwaya, H. Amano and I. Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] G. Pozina, J. P. Bergman, and B. Monemar, M. Iwaya, S. Nitta, H. Amano, and I. Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl. Phys. Lett.. 77. 1638-1640 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki: "Quantized states in Ga〜1〜-〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tabuchi, Y. Takeda, T. Takeuchi, H. Amano, I. Akasaki: "Characterization of Initial Growth Stage of GalnN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL- SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Amano, I. Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL- SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] P.N. Hai, W.M. Chen, I.A. Buyanova, B. Monemar, H. Amano, I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Nitta, T. Kashima, R. Nakamura, M. Iwaya, H. Amano, I. Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Yamaguchi, M. Kariya, S. Nitta, T. Kashima, M. Kosaki, Y. Yukawa, H. Amano, I. Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Wagner, I.A. Buyanova, N.Q.Thinh, W.M. Chen, B. Monemar, J.L. Lindstrom, H. Amano. I. Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.A. Shapiro, Y. Kim, H. Feick, E.R. Weber, P. Perlin, J.W. Yang, I. Akasaki, H. Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] C. Wetzel, M. Kasumi, H. Amano, I. Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al_xGa_<1-x>N Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Monemar, B. Paskov, P. P. Pozina, G. Paskova, T. Bergman, J. P.; Iwaya, M. Nitta, S. Amano, H. Akasaki, I.: "Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation"PHYSICA STATUS SOLIDI B BASIC RESEARCH. 228. 157-160 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Pozina, G. Bergman, J. P. Monemar, B. Iwaya, M. Nitta, S. Amano, H. Akasaki, I.: "Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport"JOURNAL OF CRYSTAL GROWTH. 230. 473-476 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Pozina, G. Bergman, J. P. Monemar, B. Iwaya, M. Nitta, S. Amano, H. Akasaki, I.: "Luminescence of InGaN/GaN Multiple Quantum wells Grown by Mass-Transport"MATRIALS SCIENCE FORUM. 353-356. 791-794 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C. Kamiyama, S. Amano, H. Akasaki, I.: "Quantized states in homogenous polarized GalnN/GaN quantum wells"SPRINGER PROCEEDINGS IN PHYSICS. 87. 1541-1542 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C. Amano, H. Akasaki, I.: "Piezoelectric Polarization in GalnN/GaN Heterostructures and Some Consequences for Device Design"JAPANESE JOURNAL OF APPLIED PHYSICS. 39. 2425-2427 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Wetzel, C. Detchprohm, T. Takeuchi, T. Amano, H. Akasaki, I.: "Piezoelectric Polarization in the Radiative Centers of GalnN/GaN Quantum Wells and Devices"JOURNAL OF ELECTRONIC MATERIALS. 29. 252-255 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Monemar, B., Paskov, P.P., Pozina, G., Paskova, T., Bergman, J.P., Iwaya, M., Nitta, S., Amano, H., Akasaki, I.: "Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation"PHYSICA STATUS SOLIDI B BASIC RESEARCH. 228. 157-160 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I.: "Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport"JOURNAL OF CRYSTAL GROWTH. 230. 473-476 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I.: "Luminescence of InGaN/GaN Multiple Quantum wells Grown by Mass-Transport"MATRIALS SCIENCE FORUM. 353-356. 791-794 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Wetzel, C., Kamiyama, S., Amano, H., Akasaki, I.: "Quantized states in homogenous polarized GaInN/GaN quantum wells"SPRINGER PROCEEDINGS IN PHYSICS. 87. 1541-1542 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Wetzel, C., Amano, H., Akasaki, I.: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"JAPANESE JOURNAL OF APPLIED PHYSICS. 39. 2425-2427 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Wetzel, C., Detchprohm, T., Takeuchi, T., Amano, H., Akasaki, I.: "Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices"JOURNAL OF ELECTRONIC MATERIALS. 29. 252-255 (2000)

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      2001 Annual Research Report
  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of(Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

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      2000 Annual Research Report
  • [Publications] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

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  • [Publications] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)

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  • [Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGal-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

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  • [Publications] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport,Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

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      2000 Annual Research Report
  • [Publications] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

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      2000 Annual Research Report
  • [Publications] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

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  • [Publications] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

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  • [Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

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  • [Publications] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)

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      2000 Annual Research Report
  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

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      2000 Annual Research Report
  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

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      2000 Annual Research Report
  • [Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

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  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

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  • [Publications] S.Nitta,M.Kariya,T.kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

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      2000 Annual Research Report
  • [Publications] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

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  • [Publications] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

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  • [Publications] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

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  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

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  • [Publications] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

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      2000 Annual Research Report
  • [Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13-305 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detecte magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜-〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

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      2000 Annual Research Report

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