| Project/Area Number |
12450038
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied physics, general
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
TANEMURA Masaki Nagoya Inst.Technol., Graduate School of Eng., Dept.Environmental Technol.& Urban Planning, Ass.Prof., 工学研究科, 助教授 (30236715)
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| Co-Investigator(Kenkyū-buntansha) |
SUGIE Hiroshi Nagoya Inst.Technol., Dept.Electrical & Computer Eng., Research Ass., 工学部, 助手 (40024327)
ICHIKAWA Yo Nagoya Inst.Technol., Dept.Systems Eng., Professor, 工学部, 教授 (10314072)
OKUYAMA Fumio Nagoya Institute of Technology, Emeritus Professor, 名誉教授 (30024235)
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| Project Period (FY) |
2000 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2002: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2000: ¥12,900,000 (Direct Cost: ¥12,900,000)
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| Keywords | Nano Material / Nanotube / Si / Sputtering / Semiconductor / Carbon / Field Electron Emission |
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| Research Abstract |
1. Development of Synthesis system of Si Nanotubes : The experimental system is composed of a differentially pumped micro-beam ion gun (JEOL ; MEED), and an arc-plasma gun (ULVAC ; APG-1000) serving as a metal supply source. The obtainable ion-current density of the ion gun was lager than 2mA/cm^2. The arc-plasma gun, whose particle evaporation mechanism is based on the pulse-triggered local vacuum-arc discharge generated just around the metal cathode edge, requires no gas supply for arc discharge, making ultra high vacuum (UHV) operation possible. The chamber was pumped down to 〜 10^<-7> Pa, and the pressure remained at 10^<-6> Pa during the synthesis.
2. Fabrication of Si nanostructures : Using this system, various types of surface structures with dimensions from nano- to micro- meters were fabricated. A threshold of metal-seeding rate (D) to sputtering rate (S) needed to induce nano-protrusion growth over a sputtered surface was determined. The surfaces sputtered with D/S ratios lower than the threshold were flat or characterized by a nano-sized rippled structure, whereas those sputtered with higher D/S values displayed densely distributed cones, rods or nanotubes, depending on the sample temperature. In addition, their sizes were controllable by adjusting the D/S ratio.
3. Applications of nanotubes : Due to their high aspect ratios and small tip radii of curvature, nanotubes are thought to be promising as field electron emission sources, e.g., for flat panel displays and for miniature x-ray tubes. For these applications, a statistical field emission model was developed that takes into account both the low-dimensional features of the electronic system of tubes and the scattered values of the geometrical and electrical parameters of the individual tubes. This theory was proved to be useful from the analysis of the field emission I-V characteristics obtained for typical tubular materials, carbon nanotubes.
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