• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Synthesis of Si Nanotubes

Research Project

Project/Area Number 12450038
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied physics, general
Research InstitutionNagoya Institute of Technology

Principal Investigator

TANEMURA Masaki  Nagoya Inst.Technol., Graduate School of Eng., Dept.Environmental Technol.& Urban Planning, Ass.Prof., 工学研究科, 助教授 (30236715)

Co-Investigator(Kenkyū-buntansha) SUGIE Hiroshi  Nagoya Inst.Technol., Dept.Electrical & Computer Eng., Research Ass., 工学部, 助手 (40024327)
ICHIKAWA Yo  Nagoya Inst.Technol., Dept.Systems Eng., Professor, 工学部, 教授 (10314072)
OKUYAMA Fumio  Nagoya Institute of Technology, Emeritus Professor, 名誉教授 (30024235)
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2002: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2000: ¥12,900,000 (Direct Cost: ¥12,900,000)
KeywordsNano Material / Nanotube / Si / Sputtering / Semiconductor / Carbon / Field Electron Emission
Research Abstract

1. Development of Synthesis system of Si Nanotubes : The experimental system is composed of a differentially pumped micro-beam ion gun (JEOL ; MEED), and an arc-plasma gun (ULVAC ; APG-1000) serving as a metal supply source. The obtainable ion-current density of the ion gun was lager than 2mA/cm^2. The arc-plasma gun, whose particle evaporation mechanism is based on the pulse-triggered local vacuum-arc discharge generated just around the metal cathode edge, requires no gas supply for arc discharge, making ultra high vacuum (UHV) operation possible. The chamber was pumped down to 〜 10^<-7> Pa, and the pressure remained at 10^<-6> Pa during the synthesis.
2. Fabrication of Si nanostructures : Using this system, various types of surface structures with dimensions from nano- to micro- meters were fabricated. A threshold of metal-seeding rate (D) to sputtering rate (S) needed to induce nano-protrusion growth over a sputtered surface was determined. The surfaces sputtered with D/S ratios lower than the threshold were flat or characterized by a nano-sized rippled structure, whereas those sputtered with higher D/S values displayed densely distributed cones, rods or nanotubes, depending on the sample temperature. In addition, their sizes were controllable by adjusting the D/S ratio.
3. Applications of nanotubes : Due to their high aspect ratios and small tip radii of curvature, nanotubes are thought to be promising as field electron emission sources, e.g., for flat panel displays and for miniature x-ray tubes. For these applications, a statistical field emission model was developed that takes into account both the low-dimensional features of the electronic system of tubes and the scattered values of the geometrical and electrical parameters of the individual tubes. This theory was proved to be useful from the analysis of the field emission I-V characteristics obtained for typical tubular materials, carbon nanotubes.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] H.Sugie, M.Tanemura他: "Carbon nanotubes as electron source in an x-ray tube"Applied Physics Letters. 78. 2578-2580 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura他: "Modeling the electron field emission from carbon nanotube films"Ultramicroscopy. 89. 39-49 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tanemura他: "Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition : Optimization of growth parameters"Journal of Applied Physics. 90. 1529-1533 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tanemura他: "Field electron emission from carbon nanotubes grown by plasma-enhanced chemical vapor deposition"Journal of Vacuum Science and Technology B. 20. 122-127 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura他: "Influence of the electronic structure on the field electron emission from carbon nanotubes"Journal of Vacuum Science and Technology B. 21. 382-390 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.K.Chini, F.Okuyama, M.Tanemura他: "Structural investigation of keV-Ar-ion induced surface ripples in Si by cross-sectional transmission electron microscopy"Physical Review B. 67. 205403-205403-6 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H.Sugie, M.Tanemura, V.Filip, K.Iwata, K.Takahashi and F.Okuyama: "Carbon nanolubes as electron source in an x-ray tube"Appl.Phys.Lett.. 78. 2578-2580 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura and F.Okuyama: "Modelling the electron field emission from carbon nanotube films"Ultramicroscopy. 89. 39-49 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tanemura, K.Iwata, K.Takahashi, Y.Fujimoto, F.Okuyama, H.Sugie and V.Filip: "Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition : Optimization of growth parameters"J.Appl.Phys.. 90. 1529-1533 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tanemura, V.Filip, K.Iwata, Y.Fujimoto and F.Okuyama, D.Nicolaescu and H.Sugie: "Field electron emission from carbon nanotubes grown by plasma-enhanced chemical vapor deposition"J.Vac.Sci.Technol.. B20. 122-127 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura and F.Okuyama: "Influence of the electronic structure on the field electron emission from carbon nanotubes"J.Vac.Sci.Technol.. B21. 382-390 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.K.Chini, F.Okuyama, M.Tanemura and K.Nordlund: "Structural investigation of keV-Ar-ion induced surface ripples in Si by cross-sectional transmission electron microscopy"Phys.Review B. 67. 205403-205403-6 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H.Sugie, M.Tanemura 他: "Carbon nanotubes as electron source in an x-ray tube"Applied Physics Letters. 78. 2578-2580 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura 他: "Modeling the electron field emission from carbon nanotube films"Ultramicroscopy. 89. 39-49 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Tanemura 他: "Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition : Optimization of growth parameters"Journal of Applied Physics. 90. 1529-1533 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Tanemura 他: "Field electron emission from carbon nanotubes grown by plasma-enhanced chemical vapor deposition"Journal of Vacuum Science and Technology B. 20. 122-127 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] V.Filip, D.Nicolaescu, M.Tanemura 他: "Influence of the electronic structure on the field electron emission from carbon nanotubes"Journal of Vacuum Science and Technology B. 21. 382-390 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.K.Chini, F.Okuyama, M.Tanemura 他: "Structural investigation of keV-Ar-ion induced surface ripples in Si by cross-sectional transmission electron microscopy"Physical Review B. (to be published). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H. Sugie, M. Tanemura 他: "Carbon nanotubes as electron source in an x-ray tube"Applied Physics Lettres. 78. 2578-2580 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] V. Filip, Nicolaescu, M. Tanemura 他: "Modeling the electron field emission from carbon nanotube filims"Ultramicroscopy. 89. 39-49 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M. Tanemura 他: "Growth aligned carbon nanotubee by plasma-enhanced chemical vapor deposition: Optimization of grouwth parameters"Journal of Applied Physics. 90. 1529-1533 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Sugie,M.Tanemura 他: "Carbon nanotubes as electron source in an x-ray tube"Appl.Phys.Lett.. (印刷中). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] V.Filip,D.Nicolaescu,M.Tanemura 他: "Modeling the electron field emission from carbon nanotube films"Ultramicroscopy. (印刷中). (2001)

    • Related Report
      2000 Annual Research Report

URL: 

Published: 2000-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi