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Si/SiGe Multiple-Quantum-well Resonant Tunneling Device

Research Project

Project/Area Number 12450141
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTokyo University of Agriculture & Technology

Principal Investigator

SUDA Yoshiyuki  Tokyo University of Agriculture & Technology,Faculty or Technolygy, Associate Professor, 工学部, 助教授 (10226582)

Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥12,100,000 (Direct Cost: ¥12,100,000)
Fiscal Year 2001: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2000: ¥8,100,000 (Direct Cost: ¥8,100,000)
KeywordsSiGe / RTD / Resonant Tunneling Diode / High Speed Device / Strain Relief / Relaxed Buffer / PVCR / Triple Barrier / PVR
Research Abstract

Resonant tunneling devices. Have been categorized into one of the highest speed devices which surpass 2D devices, such as HEMT and MODFET, and JJ devices, and have been expected to meet the demand for high speed operations from GHz to THz. So far, the tunneling devices have been applied to III-V material systems with which high tunneling barriers are obtained. If Si/SiGe tunneling devices are realized, we can expand a new Si-based ultra-high speed integration device system. However, the peak-to-valley current ratio (PVCR), in the negative differential resistance (NDR) region of, the I-V curve, as a figure of merit, has been low and 1.2 at RT since the first report of a Si/SiGe RTD in 1988. On the basis of the theoretical analysis, we have applied for the first time a combination of electron tunneling and a multiple quantum well to a Si/SiGe RTD and have succeeded in enhancing the PVCR value of a Si/SiGe RTD and obtaining a PVCR value of more than 7.6 in 1998. In this work, we have further investigated the RTD device structure and process to enhance the NDR effect. As a result, we have found that the surface crystalline quality of a strain-relief buffer largely affects the NDR performance, and have proposed an annealed thin two-layer buffer and an annealed thin multi-layer buffer, which has a thin SiGe layer with a high concentration of Ge. The proposed buffers exhibit surfaces with high crystallin quality. By introducing the high crystalline quality buffer to a electrontunneling multiple-well RTD, we have succeeded in realizing a PVCR value of more than 180 at RT which is comparable to or more than those of III-V RTDs. This result indicates the important device physics of very low inelastic scattering in SiGe RTDs. Through this research, it has' been demonstrated that the PVCR performance comparable to those of III-V RTDs has been obtained by the use of SiGe materials, which gives a great motive force to further extend Si/SiGe tunneling devices.

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] Y.Suda, H.Koyama: "Electron Resonant Tunneling with a High Peak-to-Valley Ratio at Room Temperature in Si_<1-x>Ge_x/Si Triple Barrier Diodes"Applied Physics Letters.. 79. 2273-2275 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Suda, N.Hosoya, D.Shiratori: "New Si Atomic-Layer-Controlled Growth Technique with Thermally-Cracked hydride Molecule"Journal of Crystal Growth. 237-239. 500-505 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Suda, A.Meguro, H.Maekawa: "Si_<1-x>Ge_x/Si Triple Barrier Resonant Tunneling Diode with a High Peak-to-Valley Ratio at Room Temperature"Technical Report IEICE (in Japanese). 101. 71-75 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Kumagai, Y.Kanegawa, Y.Suda, N.Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source"Journal of Porous Materials. 7. 73-76 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Yamaguchi, A.Meguro, Y.Suda: "Si_<1-x>Ge_x/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧180 at RT Formed Using an Annealed Thin Multilayer Buffer"Ext. Abs. 2001 Int. Conf. Solid State Devices and Materials. 582-583 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 須田良幸, 三木一司: "Si_<1-x>Ge_x/Si RTDと熱分解法原子層スケール成長技術"シリコンテクノロジー分科会研究集会特集号. 18. 43-47 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Suda, N. Hosoya, D. Shiratori: "New Si Atotnic-Layer-Controlled Growth ; Technique with Thermally-Cracked Hydride Molecule"Journal of Crystal Growth. vol.237-29. 500-505 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Suda and H. Koyama: "Electron Resonant Tunneling with a High Peak-to-Valley Ratio at Room Temperature in Si_<1-x>Ge<x>Si Triple Barrier Diodes"Applied Physics Letters. vol. 79. 2273-2275 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Yamaguchi, A. Meguro, Y. Suda: "Si<1-x)Ge<x>/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧ at RT Formed Using an Annealed Thin Multilayer Buffer"Ext. Abs. 2001 Int. Conf. Solid State Devices and Material. 582-583 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Suda, A. Meguro, H. Maekawa: "Sii.xGex/Si Triple Barrier Resonant Tun neling Diode with a High Peak-to-Valley Ratio at Room Temperature"Technical Report IEICE (in Japanese). vol. 101. 71-75 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Suda, K. Miki: "Si<1-x>Ge<x>/Si RTD and Thermally-Cracked Atbmic-Layer-Scale Grwoth Technology"Silicon Technology Symposium Report (in Japanese). vol. 18. 43-47 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Kumagai, Y. Kanegawa, Y. Suda, N. Koshida: "Improvetnent of Porous SI Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source"Journal of Porous Materials. vol. 7. 73-76 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Suda, N.Hosoya, D.Shiratori: "New Si Atomic-Layer-Controlled Growth Technique with Thermally-Cracked Hydride Molecule"Journal of Crystal Growth. 237-239. 500-505 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Suda, H.Koyama: "Electron Resonant Tunneling with a High Peak-to-Valley Ratio at Room Temperature in Si_<1-x>Ge_x/Si Triple Barrier Diodes"Applied Physics Letters. 79. 2273-2275 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Yamaguchi, A.Meguro, Y.Suda: "Si_<1-x>Ge_x/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of 【greater than or equal】180 at RT Formed Using an Annealed Thih Multilayer Buffer"Ext. Abs. 2001 Int. Conf. Solid State Devices and Materials. 582-583 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Suda, A.Meguro, H.Maekawa: "Si_<1-x>Ge_x/Si Triple-Barrier Resonant Tunneling Diode with a High Peak-to-Valley Ratio at Room Temperature"Technical Report IEICE (in Japanese). 101. 71-75 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 須田 良幸, 三木 一司: "Si_<1-x>Ge_x/Si RTDと熱分解法原子層スケール成長技術"シリコンテクノロジー分科会研究集会特集号. 18. 43-47 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Ayaka Kumagai: "Improvement of Porous Si Luminescence Intensity Durabilty by Nitrogen Ion Irradiation Using an ECR Ion Source"Journal of Porous Materials. 7. 73-76 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Naoyuki Hosoya: "New Approach for Si Atomic-Layer-Controlled Growth Method Using Thermally-Cracked Hydride Molecule"Abs.1'st Int.Workshop on New Group IV Semiconductors. 1. VI02 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Yoshiyuki Suda: "Electroluminescence Behavior of a Schottky-Type Asymmetric Si1-xGex/Si DQW Diode"Abs.1'st Int.Workshop on New Group IV Semiconductors. 1. VI16 (2001)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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