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Laser Doping Process for wide-bandgap compound semiconductors

Research Project

Project/Area Number 12450145
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionShizuoka University

Principal Investigator

AOKI Toru  Research Institute of Electronics, Shizuoka University Reseach Associate, 電子工学研究所, 助手 (10283350)

Co-Investigator(Kenkyū-buntansha) 東 直人  静岡大学, 工学部, 助教授 (50192464)
NAKANISHI Yoichiro  Research Institute of Electronics, Shizuoka University Professor, 電子工学研究所, 教授 (00022137)
HATANAKA Yoshinori  Research Institute of Electronics, Shizuoka University Professor, 電子工学研究所, 教授 (60006278)
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥12,700,000 (Direct Cost: ¥12,700,000)
Fiscal Year 2001: ¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 2000: ¥6,200,000 (Direct Cost: ¥6,200,000)
KeywordsHeavily Doping / Non-equilibrium reaction / Excimer laser / Wide bandgap semicondutors / II-VI compound semiconductors / Low temperature processing / CdTe / ZnO / 不純物ドーピング / 非熱平衡
Research Abstract

Laser doping processing technique has been investigated for wide-bandgap compound semiconductors. Specially, the method has been researched for II-VI compound semiconductors such as CdTe, ZnO, ZnTe which are difficult for heavily doping because these have self-compensation effects, and it is difficult to apply conventional method for silicon such as thermal diffusion and ion implantation since the II-VI crystals are not so hard. The laser doping process is low temperature processing technique. The process have has only simple two steps, i) a dopant source was deposited on sample surface, and ii) an excimer laser pulse (20nS) was irradiated on its surface under the high-pressure ambient. In this technique, it was found that the laser beam intensity was strongly effect for doping conditions. The uniform doping in large area have became possible by laser beam homoginizer system, which installed by this Gran-in-Aid, and it was clearly understand laser intensity dependences. Then, we could obtain heavily doped and this technique could be applied to made opto-electorical device. In CdTe samples, integrated gamma-ray imaging device could be fabricated by laser pattern-doping and laser abrasion processing, and high hole concentration of 10^<19> cm^<-3> was obtained in p-type ZnO.

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (53 results)

All Other

All Publications (53 results)

  • [Publications] Y.Hatanaka et al.: "Excimer laser doping techniques for II-VI semiconductor"Appl. Surf. Sci.. 175-175.. 462-467 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Aoki et al.: "ZnO Films Deposition by Plasma Enhanced CVD Using Zinc-Acetylacetonate"Electrochem. Soc. Proc.. 2001-13. 421-428 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Shallow Junction Formation on p-like CdTe Crystals by Indium Diffusion Using Excimer Laser Annealing"J. Electronic Matterials. 30. 911-916 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Aoki et al.: "p-type ZnO layer formation by excimer laser doping"Phys. Stat. Sol. (b). 229. 829-833 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Niraula et al.: "A new fabrication technique of CdTe strip detectors for gamma-ray imagin and spectroscopy"Phys. Stat. Sol. (b). 229. 1103-1107 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Miyake et al.: "Study on tne structural transformation process from ZnS epitaxial film growth on Si substrate to ZnO epitaxial film by oxidation"Phys. Stat. Sol. (b). 229. 829-833 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Hatanaka et al.: "Low-temperature processing heavily doping by epitaxial growth and laser annealing for the fabrication of CdTe gamma-ray detectors"Proc. of SPIE. 4141. 226-234 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Low-temperature growth and doping of CdTe epilayers on CdTe substrates in a remote-plasma-assisted MOCVD system for nuclear radiation detector applications"Phys. Stat. Sol. (b). 229. 83-87 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Aoki et al.: "Zinc Oxide Film Deposition by Plasma CVD using Zinc Acetvlacetonate"Proc. of 7th Int. Display Workshops. 925-928 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Aoki et al.: "Fabrication of a ZnO LED by Excimer Laser Doping Technique"Proc. of 10th Int. Workshop. on Inorganic and Organic Electrolumine scence. 141-144 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Aoki et al.: "ZnO diode fabricated by excimer laser doping"Appl. Phys. Lett.. 76. 3257-3258 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Miyake et al.: "Luminescent properties of ZnO thin films grown epitaxially on Si substrate"J. Crystal Growth. 214-215. 394-298 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] D.Mochizuki: "Pattern doping on CdTe by excimer laser irradiation"J. Crystal Growth. 214-215. 520-523 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Miyake et al.: "Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Subatrate"Jpn. J. Appl. Phys. 39. L1186-L1187 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Low-temperature growth and n-type doping of CdTe by the remote plasma assisted metalorganic chemical vapor deposition method"Vacuum. 59. 678-685 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Fabrication of CdTe strip detectors for imaging applications"Nuclear Instruments and Methods in Physics Research A. 458. 339-343 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hatanaka et. al.: "Excimer laser doping techniques for II-VI semiconductor"Appl. Surf. Sci.. 175-175. 462-467 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Aoki et. al.: "ZnO Films Deposition by Plasma Enhanced CVD Using Zinc-Acetylacetonate"Electrochem. Soc. Proc.. 2001-13. 421-428 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "Shallow Junction Formation on p-like CdTe Crystals by Indium Diffusion Using Excimer Laser Annealing"J. Electronic Matterials. 30. 911-916 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Aoki et. al: "p-type ZnO layer formation by excimer laser doping"Phys. Stat. Sol. (b). 229. 829-833 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "A new fabrication technique of CdTe strip detectors for gamma-ray imagin and spectroscopy"Phys. Stat. Sol. (b). 229. 1103-1107 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Miyake et. al.: "Study on the structural transformation process from ZnS epitaxial film growth on Si substrate to ZnO epitaxial film by oxidation"Phys. Stat. Sol. (b). 229. 829-833 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Aoki, et. al.: "ZnO diode fabricated by excimer laser doping"Appl. Phys. Lett.. 76. 3257-3258 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Miyake et. al.: "Luminescent properties of ZnO thin films grown epitaxially on Si substrate"J. Crystal Growth. 214-215. 294-298 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] D. Mochizuki: "Pattern doping on CdTe by excimer laser irradiation"J. Crystal Growth. 214-215. 520-523 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Miyake et. al.: "Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Subatrate"Jpn. J. Appl. Phys. 39. L1186-L1187 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Niraula et al.: "Low-temperature growth and n-type doping of CdTe by the remote plasma assisted metalorganic chemical vapor deposition method"Vacuum. 59. 678-685 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Niraula et al.: "Fabrication of CdTe strip detectors for imaging applications"Nuclear Instruments and Methods in Physics Research A. 339-343 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hatanaka et. al: "Low-temperature processing heavily doping by epitaxial growth and laser annealing for the fabrication of CdTe gamma-ray detectors"Proc.of SPIE. 4141. 226-234 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Niraula et. al: "Low-temperature growth and doping of CdTe epilayers on CdTe substrates in a remote-plasma-assisted MOCVD system for nuclear radiation detector applications"Phys. Stat. Sol. (b). 229. 83-87 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Aoki et. al: "Zinc Oxide Film Deposition by Plasma CVD using Zinc Acetylacetonate"Proc. of 7th Int. Display Workshops. 925-928 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Aoki et al.: "Fabrication of a ZnO LED by Excimer Laser Doping Technique"Proc. of 10th Int. Workshop. on Inorganic and Organic Electroluminescence. 141-144 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Hatanaka et.al.: "Excimer laser doping techniques for II-VI semiconductor"Appl.Surf.Sci.. 175-175. 462-467 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Aoki et.al.: "ZnO Films Deposition by Plasma Enhanced CVD Using Zinc-Acetylacetonate"Electrochem.Soc.Proc.. 2001-13. 421-428 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Niraula et.al.: "Shallow Junction Formation on p-like CdTe Crystals by Indium Diffusion Using Excimer Laser Annealing"J.Electronic Matterials. 30. 911-916 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Aoki et.al.: "p-type ZnO layer formation by excimer laser doping"Phys.Stat.Sol.(b). 229. 829-833 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Niraula et.al.: "A new fabrication technique of CdTe strip detectors for gamma-ray imagin and spectroscopy"Phys.Stat.Sol.(b). 229. 1103-1107 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Miyake et.al.: "Study on the structural transformation process from ZnS epitaxial film growth on Si substrate to ZnO epitaxial film by oxidation"Phys.Stat.Sol.(b). 229. 829-833 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Aoki,Y.Hatanaka,D.C.Look: "ZnO diode fabricated by excimer laser doping"Appl.Phys.Lett.. 76. 3257-3258 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Aoki,T.Ikeda,D.Korzec and Y.Hatanaka: "ZnSe growth by radical assisted MOCVD using hollow cathode plasma"Thin Solid Films. 368. 244-248 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Miyake,H.Kominami,H.Tatsuoka,H.Kuwabara,Y.Nakanishi nad Y.Hatanaka: "Luminescent properties of ZnO thin films grown epitaxially on Si substrate"J.Crystal Growth. 214-215. 294-298 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Mochizuki,M.Niraula,T.Aoki,T.Nagai,M.Kinoshita Y.Hatanaka: "Pattern doping on CdTe by excimer laser irradiation"J.Crystal Growth. 214/215. 520-523 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Niraula,D.Mochizuki,T.Aoki,Y.Tomita and Y.Hatanaka: "Performance of CdTe gamma-ray detectors fabricated in a new M-π-n design"J.Crystal Growth. 214/215. 1116-1120 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Noda,T.Aoki,Y.Nakanishi and Y.Hatanaka: "Growth of CdZnTe and CdSeTe crystals for p-i-n radiation detectors"J.Crystal Growth. 214/215. 1121-1124 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Niraula,D.Mochizuki,T.Aoki,Y.Nakanishi,Y.Hatanaka: "Low-temperature growth and n-type doping of CdTe by the remote-plasma CVD technique"Vacuum. 59. 678-685 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Noda,T.Aoki,Y.Nakanishi,Y.Hatanaka: "Epitaxial growth of CdSeTe films by remote plasma enhanced metal organic chemical vapor deposition"Vacuum. 59. 701-707 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Aoki,H.Nonaka,Y.Hatanaka: "Zinc Oxicide Film Deposition by Plasma CVD Using Znic Acetylacetonate"Proc.of The Seventh International Display Workshops. 925-928 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Aoki,A.Nakamura,D.C.Look,Y.Hatanaka: "Fabrication of a ZnO LED by Excimer Laser Doping Technique"Proc.of The 10th International Workshop on Inorganic and Organic Electroluminescence. 141-144 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Miyake,H.Kominami,T.Aoki,H.Tatsuoka,H.Kuwabara,Y.Nkanishi,Y.Hatanaka: "Growth of ZnO epitaxial thin films showing exciton emission on Si substrate"Proc.of 5th Joint International Conference on Advanced Science and Technology. 226-229 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Noda,A.Nakamura,T.Aoki,Y.Hatanaka: "Performance and improvement of CdZnTe based diode for radiation detectors"Proc.of 5th Joint International Conference on Advanced Science and Technology. 320-323 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Kubota,T.Aoki,M.Nagai,M.Kinosita,Y.Hatanaka: "n-ZnSe/GaAs/p-ZnSe heterostructure diode for nuclear radiation detectors"Proc.of 5th Joint International Conference on Advanced Science and Technology. 324-327

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Nakamura,M.Niraula,D.Noda,T.Aoki,Y.Hatanaka: "Pressure dependence of excimer laser processing"Proc.of 5th Joint International Conference on Advanced Science and Technology. 39. 404-409 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Miyake,H.Kominami,H.Tatsuoka,H.Kuwabara,Y.Nakanishi,Y.Hatanaka: "Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Subatrate"Jpn.J.Appl.Phys.. 39. L1186-L1187 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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