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(Ba, Sr)TiO_3 Thin Film Preparation by Liquid Source Chemical Vapor Deposition.

Research Project

Project/Area Number 12450319
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 反応・分離工学
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

OKUYAMA Kikuo  Hiroshima University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (00101197)

Co-Investigator(Kenkyū-buntansha) MURAKAMI Takeshi  Ebara Corporation, Researcher, 精密電子事業部, 研究員
SHIMADA Manabu  Hiroshima University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (70178953)
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2002: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2001: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2000: ¥10,600,000 (Direct Cost: ¥10,600,000)
KeywordsChemical Vapor Deposition / Dielectric material / Thin film / Liquid Source / Gas Phase Reaction / Grain / Metal Organic / Transport Phenomena
Research Abstract

We designed a chemical vapor deposition (CVD) reactor for film preparation of dielectric materials by a liquid source chemical vapor deposition (LSCVD) method. A film formation mechanism has been investigated experimentally and theoretically using a numerical simulation. We clarified following results.
Experimental approach
1) We designed a singie wafer CVD reactor with maximum operating temperature of 800℃ and measured temperature profiles and pressures of the reactor.
2) Dielectric films such as titanium dioxide (TiO_2), barium titanate (BaTiO_3), and barium strontium titanate (BST) were prepared on silicon wafers. Their film thicknesses and surface morphologies and chemical compositions as a function of radial direction were measured by a field emission scanning electron microscopy (FE-SEM) and inductively coupled plasma atomic emission spectroscopy (ICP-AES), respectively. Crystalline structures were analyzed by x-ray diffraction (XRD) and transmission electron microscopy.
3) Thus, the effects of operating conditions, such as precursor flow rates, operating temperatures, and pressures on the film deposition rate, chemical compositions of the surface morphology, and crystalline structures were investigated.
Theoretical approach
1) The film formation mechanisms and film deposition rate were demonstrated by the numerical simulation considering energy and mass transfer, diffusion, chemical reactions in a quartz tubular reactor. The suggested film deposition rates of Ba, Sr, and Ti sources were compared to the experimental results.
2) The suggested chemical reaction kinetics and the reaction rate constants can demonstrate the film deposition rate in the single wafer type CVD reactor as well.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] Toshiyuki Fujimoto: "Chemical Reaction Kinetics and Grows Rate of (Ba,Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition"Journal of Electrochemical Society. 144・7. 2581-2587 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hitoshi Habuka: "Model of Boron Incorporation into Silicon Epitaxial Film in a B_2H_6-SiHCl_3-H_2 System"Journal of Crystal Growth. 222・1-2. 183-193 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hitoshi Habuka: "Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface"Journal of the Electrochemical Society. 148・7. 365-369 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Heru Setyawan: "Visualization and Numerical Simulation of Fine Particle Transport in Low-Pressure Parallel Plate Chemical Vapor Deposition Reactor"Chemical Engineering Science. 57・3. 497-506 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Heru Setyawan: "Characterization of Fine Particle Trapping in Plasma-Enhanced Chemical Vapor Deposition Reactor"Journal of Applied Physics. 92・9. 5525-5531 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Toshiyuki Fujimoto: "Chemical Reaction Kinetics and Grows Rate of (Ba,Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition."Journal of Electrochemical Society. 144(7). 2581-2587 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hitoshi Habuka: "Model of Boron Incorporation into Silicon Epitaxial Film in a B_2H_5-SiHCl_3-H_2 System."Journal of Crystal Growth. 222・1-2. 183-193 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hitoshi Habuka: "Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface."Journal of the Electrochemical Society. 148・7. 365-369 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Heru Setyawan: "Visualization and Numerical Simulation of Fine Particle Transport in Low-pressure Parallel Plate Chemical Vapor Deposition Reactor."Chemical Engineering Science. 57・3. 497-506 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Heru Setyawan: "Characterization of Fine Particle Trapping in Plasma-Enhanced Chemical Vapor Deposition Reactor."Journal of Applied Physics. 92・9. 5525-5531 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hitoshi Habuka: "Model of Boron Incorporation into Silicon Epitaxial Film in a B_2H_6-SiHCl_3-H_2 System"Journal of Crystal Growth. 222・1-2. 183-193 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] Hitoshi Habuka: "Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface"Journal of the Electrochemical Society. 148・7. 365-369 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] Heru Setyawan: "Visualization and Numerical Simulation of Fine Particle Transport in Low-Pressure Parallel Plate Chemical Vapor Deposition Reactor"Chemical Engineering Science. 57・3. 497-506 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Heru Setyawan: "Characterization of Fine Particle Trapping in Plasma-Enhanced Chemical Vapor Deposition Reactor"Journal of Applied Physics. 92・9. 5525-5531 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Motoaki Adachi: "Nanoparticle formation mechanism in CVD reactor with ionization of source vapor"Journal of Nanoparticle Research. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Koichi Nakaso: "Synthesis of Non-agglomerated Nanoparticles by An Electrospray Assisted Chemical Vapor Deposition (ES-CVD) Method"Journal of Aerosol Science. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Hitoshi Habuka: "Model of Boron Incorporation into Silicon Epitaxial Film in a B_2H_6-SiHCl_3-H-2 System"Journal of Crystal Growth. 222・1-2. 183-193 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Bin Xia: "Novel Route to Nanoparticle Synthesis by Salt-Assisted Aerosol Decomposition"Advanced. Materials. 13・20. 1579-1582 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Hitoshi Habuka: "Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface"Journal of the Electrochemical Society. 148・7. 365-369 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Heru Setyawan: "Visualization and Numerical Simulation of Fine Particle Transport in a Low-Pressure Parallel Plate Chemical Vapor Deposition Reactor"Chemical Engineering Science. 57・3. 497-506 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Toshiyuki FUJIMOTO: "Chemical Reaction Kinetics and Growth Rate of (Ba,Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition"Journal of Electrochemical Society. 144・7. 2581-2587 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 奥山喜久夫: "Preparation of (Ba,Sr)TiO_3 films Prepared by Liquid Source Chemical Vapor Deposition Method"Proceeding of The First Joint China/JAPan Chemical Engineering Symposium. 525-530 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 伊藤佳史: "LSCVD法によるBST薄膜の製造と評価"化学工学会第33回秋季大会要旨集. D207 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 奥山喜久夫: "(Ba,Sr)TiO_3 Thin Film Preparation by Liquid Source Chemical Vapor Deposition"Proceedings of 2000 IAMS International Seminar. 100-105 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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