| Project/Area Number |
12555004
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 展開研究 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Tokyo University of Agriculture and Technology |
|---|
Principal Investigator |
MORISHITA Yoshitaka Tokyo University of Agriculture and Technology, Faculty of Technology, Associate Professor, 工学部, 助教授 (00272633)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ISHIBASHI Takayuki Tokyo University of Agriculture and Technology, Faculty of Technology, Assistant Professor, 工学部, 助手 (20272635)
SATO Katsuaki Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (50170733)
|
|---|
| Project Period (FY) |
2000 – 2002
|
| Project Status |
Completed (Fiscal Year 2002)
|
| Budget Amount *help |
¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2002: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2001: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥8,000,000 (Direct Cost: ¥8,000,000)
|
|---|
| Keywords | Photonic crystals / Anodization / Quantum dots / Semiconductor / Molecular beam epitaxy |
|---|
| Research Abstract |
We have proposed a novel method for controlling the site of InAs dots using molecular-beam epitaxial(MBE) growth on anodized (001) GaAs substrates. InAs dots were selectively grown at the bottom of hollows formed by anodization of GaAs in an NH_4OH solution. However, the size variation of hollows strongly affected the size of InAs dots. In this study, we investigated on the effects of regularity of hollows which are formed by anodization of GaAs substrates on the MBE growth of InAs dots.
After the anodizaiotn, scanning electron microscope images show that hollows were formed on the surface. In the case of the optimal anodization, the average diameter and the standard deviation of hollows were about 200 and 20 nm, respectively. In the case of a triangular pattern was formed on the substrate using electron beam lithography and dry etching technique before the anodization, the size variation was further improved.
InAs dots were grown by MBE on honeycomb hollows formed by anodizatpn of GaAs substrates. In the case of the average diameter of hollows was about 80 nm, one InAs dot was selectively grown at each bottom of honeycomb hollows, and the average diameter of InAs dots was about 40 nm. Photolmninescence spectrum shows that a broad peak from quantum dots was observed at about 1.2 μm.
|
