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Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI

Research Project

Project/Area Number 12555005
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionNagoya University

Principal Investigator

YASUDA Yukio  Nagoya University, Graduate School of Engineering Professor, 工学研究科, 教授 (60126951)

Co-Investigator(Kenkyū-buntansha) NAKATSUKA Osamu  Nagoya University, Center for Integrated Research in Science and Engineering Assistant Professor, 理工科学総合研究センター, 助手 (20334998)
IKEDA Hiroya  Nagoya University, Graduate School of Engineering Assistant Professor, 工学研究科, 助手 (00262882)
SAKAI Akira  Nagoya University, Graduate School of Engineering Associate Professor, 工学研究科, 助教授 (20314031)
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥12,900,000 (Direct Cost: ¥12,900,000)
Fiscal Year 2002: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2001: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2000: ¥10,300,000 (Direct Cost: ¥10,300,000)
KeywordsUltra low resistance contact / modulated interface / Silicon germanium / Rapid thermal annealing / Titanium / Silicide / Germanosilicide / Source / Drain / ニッケル / 超抵抗コンタクト / ボロン / 急速加熱化学気相成長法
Research Abstract

In this project, in order to realize reducing the parasitic resistance such as the contact resistivity at the metal/Si contact and the ultra shallow junction at source/drain regions, we aimed to the establishment of the applicable contact structure for sub-0.1 μm ULSI devices. We have clarified the relationship between the solid phase reactions and the electrical properties at the Ti/SiGe(C)/Si contact structure.
(1) The reaction products change from Ti5Ge_6, to C49-TiSi_2, C54-Ti(Si_<1_y>Ge_y)_2 with an increase in annealing temperature. The transformation temperature to C54-Ti(Si_<1-y>Ge_y)_2 in this structure is higher than that in the Ti/SiGe/Si structure. The Ti(SiGe)_2/Ge-rich SiGe/Si structure with the composition-modulated interface of Ge can be formed with annealing the Ti/Ge/Si structure.
(2) The Schottky barrier height estimated from the I-V measurement of the Ti/p-SiGe/p-Si structure decreases with the increase in the Ge composition. This structure is expected to be effective to reduce the contact resistivity.
(3) In the Ti/SiGeC/Si sample with the low Ge composition, C49-Ti(SiGe)_2 is formed after the 550℃-annealing and the transformation to C54-phase occurs after 750℃ RTA. On the other hand, in the case of the high Ge composition, Ti_6Ge_5 is formed at 550℃, C49-Ti(SiGe)_2 is formed with RTA at 650〜700℃, and the transformation to the C54-phase completes at 750℃. Almost Ge in the SiGe layer can be mixed in the C54-phase by using the RTA method.
(4) In the Ti/SiGeC/Si sample with the high Ge composition, while the Ti_6Ge_5 is formed with the conformal layer-structure, -grains of C49- and C54-phase agglomerate and the discontinuous film is formed. The reason why that occurs is the inhomogenization of the Ge composition in the reaction layer with the formation of the Ti_6Ge_5. On the other hand, in the sample with the low Ge composition, the conformal and flat layer of C49- and C54-phase can be formed.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaciton of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Shigeaki Zaima, Yukio Yasuda: "Low resistivity contact materials for ULSI applictions and metal/silicon interfaces"Ext. Abst. 19th Electronic Symp.. 3-6 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Osamu Nakatsuka et al.: "Dependence of contact resistivity on impurity concentration in Co/Si systems"Applied Surface Science. 159-160. 149-153 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yukio Yasuda et al.: "Interfacial reactions of Ti/ and Zr/Si_<1-x>Ge_x/Si contacts with rapid thermal annealing"Thin Solid Films. 373. 73-78 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshinori Tsuchiya, et al.: "Electrical properties of Ni silicide/silicon contact"Advanced Metallization Conference 2001 (AMC 2001). 679-684 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akihiro Tobioka et al.: "Study on solid-phase reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) contacts"Materials Science and Engineering. B89. 373-377 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 安田幸夫: "1.2節"薄膜形成技術""薄膜工学(監修:金原粲)(丸善株式会社). 6-28 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Shigeaki Zaima and Yukio Yasuda: "Low resistivity contact materials for ULSI applications and metal/silicon interfaces"Ext.Abst.19th Electronic Symp.. 3-6 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Osamu Nakatsuka, et al.: "Dependence of contact resistivity on impurity concentration in Co/Si systems"Appl.Surf.Sci.. 159-160. 149-153 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yukio Yasuda, et al.: "Interfacial reactions of Ti/ and Zr/Si_<1-x>Ge_x/Si contacts with rapid thermal annealing"Thin Solid Films. 373. 73-78 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshinori Tsuchiya, et al.: "Electrical properties of Ni silicide/silicon contact"Advanced Metallization Conference 2001(AMC 2001)(Materials Research Society, Warrendale, Pennsylvania, 2002). 679-684 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akihiro Tobioka, et al.: "Study on solid-phase reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) contacts"Mat.Sci.and Eng.. B89. 373-377 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Tsuchiya, O.Nakatsuka, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda: "Electrical properties of Ni silicide/silicon contact"Advanced Metallization Conference 2001. 679-684 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Tobioka, Y.Tsuchiya, H.Ikeda, A.Sakai, S.Zaima, J.Murota, Y.Yasuda: "Study on solid-phase reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) contacts"Materials Science and Engineering. B89. 373-377 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 安田幸夫(編集委員会幹事も兼任): "『薄膜工学』(監修:金原粲)1.2節"薄膜形成技術"pp.6-28"丸善株式会社. 23 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Tsuchiya, O.Nakatsuka, H.Ikeda, A.Sakai, S.Zaima, and Y.Yasuda: "Electrical Properties of Ni silicide/silicon contact"Advanced Metallization Conference. (掲載決定済). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Zaima: "Low resistivity contact materials for ULSI applications and metal/silicon interfaces"Extended abstract of the 19th Electronic Symposium, Izu-Nagaoka. 3-6 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Okada: "Epitaxial growth of heavily B-doped SiGe films and interfacial reactions of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] O.Nakatuska: "Dependence of contact resistivity on impurity concentration in Co/Si systems"Applied Surface Science. 159-160. 149-153 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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