• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate

Research Project

Project/Area Number 12555096
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionMeijo University

Principal Investigator

NARITSUKA Shigeya (2002)  Faculty of Science and Engineering, Meijo University, 理工学部, 助教授 (80282680)

西永 頌 (2000-2001)  名城大学, 理工学部, 教授 (10023128)

Co-Investigator(Kenkyū-buntansha) ASAKAWA Kiyoshi  The Femtosecond Technology Research Association (FESTA), Group Leader, グループリーダー
MARUYAMA Takahiro  Faculty of Science and Engineering, Meijo University, Lecturer, 理工学部, 講師 (30282338)
成塚 重弥  名城大学, 理工学部, 助教授 (80282680)
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2001: ¥4,700,000 (Direct Cost: ¥4,700,000)
Fiscal Year 2000: ¥7,300,000 (Direct Cost: ¥7,300,000)
Keywordshetero-epitaxy / dislocation-free / microchannel epitaxy / VCSEL / long lifetime laser diode / Si / OEIC / oxygen impurity / Si基板上のGaAsエピタキシー / 面発光レーザダイオード / 横方向成長 / 分子線エピタキシ(MBE) / 酸化ブロック構造 / 電流酸化狭窄構造 / Si基板上のGaAsエピタキシ / 面発光レーザーダイオード / マイクロチャンネルエピタキシ / 分子線エピタキシ / AlGaAs高純度化 / 屈折率導波構造 / 面発光ダイオード / マイクロチャネルエピタキシ / 液相エピタキシ / 反応性イオンエッチング
Research Abstract

"Opto-Electronic Integrated Circuit (OEIC)" is a key device in future information and communications society. Besides electronic signal processing, it makes full use of optoelectronics information processing technology. In order to realize the OEIC, hetero-epitaxial technology is important. For example, dislocation free layer is essential to realize a long lifetime laser as light source. However, dislocation density of GaAs grown on Si is an order of 10^6 cm^<-2> now and is still too high.
In order to overcome the above problems and to grow dislocation free crystals, we proposed "microchannel epitaxy (MCE)". In MCE, the information of crystal of substrate is transmitted through the narrow window ("microchannel"), but the information of defects in the substrate is cut off, and reduction of dislocation density can be realized. In this research subject, we grew dislocation free GaAs epitaxial layer on Si substrate and tried to fabricate Vertical Cavity Surface Emitting Laser (VCSEL). Through this research, the following outcome was rewarded.
1. A high-performance laser with gain-guided structure was realized on Si substrate. Though the laser was operated only by a pulsed current, the performance of the laser was found no less inferior than that of the laser fabricated on GaAs substrate.
2. Incorporation mechanism of oxygen into AlGaAs layers was investigated, because reduction of oxygen impurity is mandatory for the improvement of laser characteristics.
3. The performance of the laser was found strongly related to the concentration of oxygen, and it was experimentally confirmed that reduction of oxygen concentration is essential to decrease the threshold current density.
4. VCSEL with oxide-confinement structure was fabricated on GaAs substrate and it showed a high-grade performance of laser operation.
5. "Oxide block effect" was also tried to utilize in order to improve the flexibility of VCSEL processing.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (47 results)

All Other

All Publications (47 results)

  • [Publications] S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Nishinaga: "Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy"J. Crystal Growth. (印刷中). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.Matsunaga, T.Nishinaga: "Crystallization mechanism of amorphous GaAs buffer layers on Si (001)"J. Research Institute of Meijo University. 2(印刷中). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Maruyama, T.Nishinaga: "Oxygen incorporation into MBE-grown AlGaAs layers"Materials Research Society Symposium Proceeding. Vol.744. M8.9.1-M8.9.5 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Matusnaga, S.Naritsuka, T.Nishinaga: "A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy"J. Crystal Growth. 237-239. 237-239 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.Mochizuki, K.Motodohi, S.Ohya, N.Ikeda, Y.Sugimoto, K.Asakawa, W.D.Huang, T.Nishinaga: "Room-temperature pulsed oscillation of an AlGaAs-based multi-quantum-well laser fabricated on a GaAs microchannel epitaxy (MCE) layer on Si"J. Research Institute of Meijo University. 1. 77 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D.Kishimoto, T.Nishinaga, S.Naritsuka, H.Sakaki: "Start of 2D nucleation by accumulation of Ga adatoms GaAs (111)B facet"J. Crystal Growth. 240. 52-56 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] W.D.Huang, T.Nishinaga, S.Naritsuka: "Microchannel epitaxy of GaAs from parallel and nonparallel seeds"J. Jpn. Soc. Microgravity Appl. 40. 5373-5376 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] W.D.Huang, T.Nishinaga, S.Naritsuka: "AlSb Compositional Nonuniformity Induced by the Different Ga-Al Exchange Modes in the Melt Growth of AlxGal-xSb"Jpn. J. Appl. Phys. 40. 4648-4651 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, T.Nishinaga: "Intersarface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE"J. Crystal Growth. 222. 14-19 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Toyoda, Y.S.Hiraoka, S.Naritsuka, T.Nishinaga: "Ab initio calculation on the dissociative reaction of As4 molecules"Applied Surface Science. 159-160. 360-367 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D.Kishimoto, T.Ogura, A.Yamashiki, T.Nishinaga, S.Naritsuka, T.Noda, H.Sakaki: "2D-nucleation of (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication"J. Crystal Growth. 216. 1-5 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D.Kishimoto, T.Nishinaga, S.Naritsuka, T.Noda, Y.Nakamura: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"J. Crystal Growth. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.Yan, Y.Hmaoka, S.Naritsuka, T.Nishinaga: "Coalescence in microchannel epitaxy of InP"J. Crystal Growth. 212. 1-10 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, T.Nishinaga, M.Tachikawa, H.Mori: "Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source"J. Crystal Growth. 211. 395-399 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.Yan, S.Naritsuka, T.Nishinaga: "Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP"J. Crystal Growth. 209. 1-7 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka, O. Kobayashi, K. Mitsuda and T. Nishinaga: "Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy"J. Crystal Growth. (in print).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka, Y. Matsunaga and T. Nishinaga: "Crystallization mechanism of amorphous GaAs buffer layers on Si (001)"J. Research Institute of Meijo University. 2 (in print). (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka, O. Kobayashi, K. Mitsuda, T. Maruyama and T. Nishinaga: "Oxygen incorporation into MBE-grown AlGaAs layers"Materials Research Society Symposium Proceeding. Vol. 744. M8.9.1-M8.9.5 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Matsunaga, S. Naritsuka and T. Nishinaga: "A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy"J. Crystal Growth. 237-239. 1460-1465 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka, Y. Mochizuki, K. Motodohi, S. Ohya, N. Ikeda, Y. Sugimoto, K. Asakawa, W. D. Huang and T. Nishinaga: "Room-temperature pulsed oscillation of an AlGaAs-based multi-quantum-well laser fabricated on a GaAs microchannel epitaxy (MCE) layer on Si"J. Research Institute of Meijo University. 1. 77 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D. Kishimoto, T. Nishinaga, S. Naritsuka and H. Sakaki: "Start of 2D nucleation by accumulation of Ga adatoms GaAs (111)B facet"J. Crystal Growth. 240. 52-56 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] W. D. Huang, T. Nishinaga and S. Naritsuka: "Microchannel epitaxy of GaAs from parallel and nonparallel seeds"J. Jpn. Soc. Microgravity Appl.. 40. 5373-5376 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] W. D. Huang, T. Nishinaga and S. Naritsuka: "AlSb Compositional Nonuniformity Induced by the Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_<1-x>Sb"Jpn. J. Appl. Phys.. 40. 4648-4651 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka and T. Nishinaga: "Intersurface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE"J. Crystal Growth. 222. 14-19 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Toyoda, Y. S. Hiraoka, S. Naritsuka and T. Nishinaga: "Ab initio calculation on the dissociative reaction of As_4 molecules"Applied Surface Science. 159-160. 360-367 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D. Kishimoto, T. Ogura, A. Yamashiki, T. Nishinaga, S. Naritsuka, T. Noda and H. Sakaki: "2D-nucleation of (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication"J. Crystal Growth. 216. 1-5 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] D. Kishimoto, T. Nishinaga, S. Naritsuka, T. Noda, Y. Nakamura and H. Sakaki: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"J. Crystal Growth. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z. Yan, Y. Hamaoka, S. Naritsuka and T. Nishinaga: "Coalescence in microchannel epitaxy of InP"J. Crystal Growth. 212. 1-10 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Naritsuka, T. Nishinaga, M. Tachikawa and H. Mori: "Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source"J. Crystal Growth. 211. 395-399 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z. Yan, S. Naritsuka and T. Nishinaga: "Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy"J. Crystal Growth. 209. 1-7 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.Mochizuki, K.Motodohi, S.Ohya, N.Ikeda, Y.Sugimoto, K.Asakawa, W.D.Huang, T.Nishinaga: "Room-temperature pulsed oscillation of an AlGaAs-based multi-quantum-well laser fabricated on a GaAs microchannel epitaxy(MCE)layer on Si"J. Research Institute of Meijo University. 1. 77 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] D.Kishimoto, T.Nishinaga, S.Naritsuka, H.Sakaki: "Start of 2D nucleation by accumulation of Ga adatoms GaAs (111)B facet"J. Crystal Growth. 240. 52-56 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Maruyama, T.Nishinaga.: "Oxygen incorporation into MBE-grown AlGaAs layers"Abstract of Materials Research Society Fall Meeting. 2-6. 323 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Nishinaga: "Incorporation mechanism of oxygen atoms into MBE-grown AlGaAs layers"Extended Abstracts of the 21st Electronic Materials Symposium. 19-21. 149-150 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Naritsuka, T.Nishinaga: "Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE"Journal of Crystal Growth. 222. 14-19 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] W.D.Huang, T.Nishinaga, S.Naritsuka: "Microchannel epitaxy of GaAs from parallel and nonpararell seeds"Jpn.J.Appl.Phys.. 40. 5373-5376 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] W.Huang, T.Nishinaga, S.Naritsuka: "AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of AlxGa1-xSb"J.Appl.Phys.. 40. 4648-4651 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Naritsuka, Y.Mochizuki, Y.Motodohi, S.Ohya, N.Ikeda, Y.Sugimoto, K.Asakawa, W.D.Huang, T.Nishinaga: "Room-temperature pulsed oscillation of GaAs-based MQW laser on GaAs microchannel epitaxy(MCE) on Si"Extended abstracts of the 20th Electronic Materials Symposium, Nara. 37-40 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Naritsuka, Y.Mochizuki, Y.Motodohi, S.Ohya, N.Ikeda, Y.Sugimoto, K.Asakawa, W.D.Huang, K.Mitsuta, O.Kobayashi, T.Nishinaga: "Fabrication of laser array on microchannel epitaxy GaAs/Si toward the realization of opto-electronic integrated circuits(OEICs)"Dev.Res.Conf., Nortre Dame. (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Matsunaga, S.Naritsuka, T.Nishinaga: "A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy : vertical microchannel epitaxy"The Fifth symposium on Atomic-Scale Surface and Interface Dynamics. 27-32 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 西永 頌(分担執筆、編集委員): "結晶成長学辞典"共立出版. 363 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Z.Yan,S.Naritsuka,T.Nishinaga: "Two-dimmensional numerical calculation of solute diffusion in microchannel epitaxy of InP"Journal of Crystal Growth. 209. 1-7 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Shigeya Naritsuka,Tatau Nishinaga,Masami Tachikawa and Hidehumi Mori: "Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source"Journal of Crystal Growth. 211. 395-399 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Zheng Yan,Yoshiyuki Hamaoka,Shigeya Naritsuka,Tatau Nishinaga: "Coalescence in microchannel epitaxy of InP"Journal of Crystal Growth. 212. 1-10 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 西永頌: "化合物半導体における格子不整合とマイクロチャネルエピタキシー(解説)"表面科学. 21巻6号. 320-325 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Matsunaga,S.Naritsuka and T.Nishinaga: "Crystallization of amorphous GaAs buffer layers on Si(001) step structures induced by As deposition studied with STM and AFM"Proceedings of The Fourth symposium on Atomic-Scale Surface and Interface Dynamics. 51-56 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Nishinaga: "Understanding and control of crystal growth -for growing high quality semiconductor crystals-"Extended abstracts of the 19th Electronic Materials Symposium, Izu-Nagaoka. 1-2 (2000)

    • Related Report
      2000 Annual Research Report

URL: 

Published: 2000-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi