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Gallium Nitride Single Crystal Growth by Flux Method

Research Project

Project/Area Number 12555175
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Inorganic materials/Physical properties
Research InstitutionTohoku University

Principal Investigator

SHIMADA Masahiko  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Professor, 多元物質化学研究所, 教授 (80029701)

Co-Investigator(Kenkyū-buntansha) MURAKAMI Yasukazu  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Research Associate, 多元物質科学研究所, 助手 (30281992)
KUBOTA Shuichi  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Research Associate, 多元物質科学研究所, 助手 (10271975)
YAMANE Hisanori  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Professor, 多元物質科学研究所, 教授 (20191364)
SARAYAMA Seiji  Dept., 5, R&D Center, Ricoh Company Ltd., Senior Researcher, 中央研究所・第5研究センター, 主席係長研究員
SEKIGUCHI Takashi  National Institute of Materials Science, Nanomaterials Laboratory, Senior Researcher, ナノマテリアル研究所, 主任研究官
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥13,200,000 (Direct Cost: ¥13,200,000)
Fiscal Year 2002: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2001: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2000: ¥9,100,000 (Direct Cost: ¥9,100,000)
Keywordsgallium nitride / single crystal / flux method / crystal growth / crystal structure / cathodluminescence / 窒素ガリウム / 発光特性 / キャリア濃度
Research Abstract

Colorless transparent platelet single crystals with a maximum area of 10.0 X 5.0mm^2 by 0.03-0.1 mm thick was obtained at 750℃, 5Mpa of N2 for 360h and 0.60 of Na/(Ga+Ns)mole ratio (γ_<Na>). At 800℃, 3MPa of N_2 for 250h and γ_<Na>=0.60, colorless transparent prismatic crystals having a size of 1.0x0.5x0.5 mm^3 were obtained. Prismatic single crystals with 1.0xO.5x0.5 mm3 size were also obtained at 750℃, 5MPa of N_2 for 450h and γ_<Na>=0.54. The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.
The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals. Hall measurements were carried out by the van der Pauw technique for the platelet crystals having a size of 1x1x0.2 mm^3. The concentration of free electrons in the crystal was 1-2x10^<18>cm-^3 and the mobility was 100 cm^2V-^1S-^1 at room temperature. The electrical conductivity was about 25 Ω-1cm-1 and almost independent of temperature between 120 and 350 K. The near band-edge emission of GaN was observed at 365 nm (3.4eV) by CL spectroscopy. No bands or peaks except the peak from the near band emission were observed. These results indicate the high quality of the GaN single crystals synthesized in this study.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] Hisanori Yamane: "GaN single crystal growth from a Na-Ga melt"Journal of Materials Science. 35. 801-805 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masato Aoki: "Growth of 5mm GaN Single Crystals at 750℃ from an Na-Ga Melt"Crystal Growth and Design. 1. 119-122 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masato Aoki: "Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method"Journal of Ceramic Society of Japan. 109. 858-862 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masato Aoki: "Morphology and Polarity of GaN Single Crystals Synthesized by the Na Flux Method"Crystal Growth and Design. 2. 55-58 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masato Aoki: "GaN single crystal growth using high-purity Na as a flux"Journal of Crystal Growth. 242. 70-76 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masato Aoki: "Conditions for seeded growth of GaN crystals by the Na flux method"Materials Letters. 56. 660-664 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Yamane, D. Kinno, M. Shimada, T. Sekiguchi and F.J. DiSalvo: "GaN single crystal growth from a Na-Ga melt"Journal of Materials Science. 35. 801-805 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. DiSalvo: "Growth of 5 mm GaN single crystals at 750℃ from an Na-Ga Melt"Crystal Growth and Design. 1. 119-122 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. DiSalvo: "Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method"Journal of Ceramic Society of Japan. 109. 858-862 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Aoki, H. Yamane, M. Shimada, T. Kajiwara, S. Sarayama and F.J. DiSalvo: "Morphology and Polarity of GaN Single Crystals Synthesized by the Na flux Method"Crystal Growth and Design. 2. 55-58 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. DiSalvo: "GaN single crystal growth using high-purity Na as a flux"Journal of crystal Growth. 242. 70-76 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. Salvo: "Conditions for seeded growth of GaN crystals by the Na flux method"Materials Letters. 56. 660-664 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 山根 久典: "K-Ga溶液を用いた立方晶窒化カリウムの作製"日本セラミックス協会学術論文誌. 110. 289-292 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takashi Sekiguchi: "Gathodluminescence study of h-and c-GaN single crystals grown by Na or K flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masato Aoki: "GaN Single crystal growth using high-purity Na as a flux"Journal of Crystal Growth. 242. 70-76 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masato Aoki: "Conditions for seeded growth of GaN crystals by the Na flux method"Materials Letters. 56. 660-664 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masato Aoki: "Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method"Journal of the Ceramic Society of Japan. 109・10. 858-862 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masato Aoki: "Growth of 5mm GaN Single Crystals at 750℃ from an Na-Ga Melt"Crystal Growth and Design. 1. 119-122 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 山根久典: "最近のNaフラックスを用いたGaN単結晶育成に関する研究"日本結晶成長学会誌. 28・5. 316-321 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Hisanori Yamane: "Growth of zinc-blend-type structure GaN from a Na-Ga melt"Materials Letters. 42. 66-70 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Hisanori Yamane: "Zinc-Blend-Type Cubic GaN Single Crystals Prepared in a Potassium Flux"Japanese Journal of Applied Physics. 39. 146-148 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Hisanori Yamane: "GaN single crystal growth from a Na-Ga melt"Journal of Materials Science. 35. 801-808 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Masato Aoki: "Growth of GaN single crystals from a Na-Ga melt at 750℃ and 5MPa of N_2"Journal of Crystal Growth. 218. 7-12 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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