| Project/Area Number |
12555183
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
TAKANASHI Koki Institute for Materials Research, Professor, 金属材料研究所, 教授 (00187981)
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| Co-Investigator(Kenkyū-buntansha) |
KOBAYASHI Nobukiyo The Research Institute for Electric and Magnetic Materials Researcher, 研究員 (70205475)
SHIMA Toshiyuki Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (50261508)
MITANI Seiji Institute for Materials Research, Associate Professor, 金属材料研究所, 助教授 (20250813)
OHNUMA Shigehiro The Research Institute for Electric and Magnetic Materials, Principal Researcher, 主任研究員 (50142633)
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| Project Period (FY) |
2000 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 2002: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2001: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 2000: ¥9,200,000 (Direct Cost: ¥9,200,000)
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| Keywords | granular film / soft magnetic film / micro fabrication / tunnel effect / magnetoresistance / magnetization process / magnetoresistance device / magnetic sensor / 磁性薄膜 / 磁性細線 / 3次元人工超格子 / 自己組織化 / 原子ステップ / 薄膜成長 / 磁気機能性 / ナノテクノロジー |
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| Research Abstract |
Currently, magnetic sensors have been important devices, and are actually used for many systems and purposes. Magnetic granular thin film is one of most important materials applicable to magnetic sensors because it can be made easily by a conventional sputtering technique. Furthermore, excellent field-sensitivity has been achieved in granular-in-gap (GIG) structures in which magnetic granular film is put in a lateral gap between a couple of soft magnetic alloy electrodes.
In this study, we have investigated on (i) optimization of GIG structures, (ii) development of new structures for high field-sensitivity, (iii) development of new magnetic granular materials with large magnetoresistance, (iv) mechanism of the high field-sensitivity in GIG structures,(v) related magnetoresistance effects in GIG structures and (vi) development of actual GIG devices. By optimizing GIG structures, the magnitude and field-sensitivity of tunnel magnetoresistance are improved. This result is useful for preparing actual GIG devices. Concerning new materials, the largest room-temperature magnetoresistance has been found in CoFe-fluoride granular films, indicating that fluoride is a good barrier material for tunnel magnetoresistance. As a related magnetoresistance effect, enhanced magnetoresistance due to spin dependent single electron tunneling is observed at low temperatures in nanometer-sized GIG structures. Additionally, optimization of the electrical circuit for GIG sensors has been performed.
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