| Budget Amount *help |
¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2001: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2000: ¥7,000,000 (Direct Cost: ¥7,000,000)
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| Research Abstract |
In this project, as an example of the application to materials processing science, a plasma chip, an innovative material-processing device using microscale plasma, has been developed. A prototype plasma chip has been fabricated with microscale plasma generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated have some advantages for processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high-density microscale plasma and the possibility of parallel processing with integrated apparatus. The following results have been obtained in this project.
(1) Using a specially controlled electric source, we have successfully obtained stable glow-type plasma using various plasma gas such as H2, Ar, CH4, N2, and O2 for more than 30 min.
(2) The high density (above 10^<15>cm^<-3>) of the microscale plasma of plasma chip have been confirmed experimental by optical emission spectroscopy and Langmuir probe measurement, and computer simulation.
(1) Plasma chemical vapor deposition (CVD) of carbon films using a CH4-H2 gas system and carbon nitride films using a CH4-N2 gas system have been performed with a prototype plasma chips. Deposits were characterized by scanning electron microcopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), Raman spectroscopy, infrared spectroscopy. From these characterizations, it was founded that we have obtained various carbon films easily, such as a glassy carbon and diamond-like carbon, and carbon nitride films with various contents of nitrides with a high deposition rate exceeding 1 μm/m.
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