| Co-Investigator(Kenkyū-buntansha) |
KO JungMin Tohoku University, Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (00333881)
YOSHIKAWA Akira Tohoku University, Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (50292264)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2001: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2000: ¥2,700,000 (Direct Cost: ¥2,700,000)
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| Research Abstract |
In this study, we established all technologies and made database all research results, which can be referred widely as basic technological knowledge.
By three growth technologies such as Czochralski (Cz), μ-Pulling Down (μ-PD) and Floating Zone (Fz) methods, various doped Ga_2O_3 single crystals such as (Ga_<1-x>W_x)_2O_3, (Ga_<1-x>Mo_x)_2O_3, (Ga_<1-x>Ge_x)_2O_3, (Ga_<1-x>Hf_x)_2O_3, (Ga_<1-x>Zr_x)_2O_3 were grown and their electrical and optical properties were investigated. Also, by using thermal treatment as a tool to make a oxygen deficiency for the grown crystals, Ga_2O_3 single crystals of n-type semiconducting was realized. We summarize the research results as follows:
1. We established a technology to grow doped Ga_2O_3 single crystals by Cz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.
2. We established a technology to grow doped Ga_2O_3 single crystals by μ-PD method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.
3. We established a technology to grow doped Ga_2O_3 single crystals by Fz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.
4. For the grown crystals by Cz, μ-PD, and Fz methods, the n-type semiconducting property was improved by optimizing partial pressure of mixture gas (oxygen and nitrogen) and thermal treatment temperature so that the crystals are of proper oxygen-deficiency.
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