| Project/Area Number |
12650021
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
ISHI Makoto Kanazawa Institute of Technology, Electrical Engineering, Professor, 工学部, 教授 (30222946)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro Kanazawa Institute of Technology, Electrical Engineering, Vice Professor, 工学部, 助教授 (30257448)
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| Project Period (FY) |
2000 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2001: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2000: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | Monomethylhydrazine / Chemical Vapor Deposition / Quadrupole Mass Analyzer / Trimethylindium / Reaction Products / InGaN / Mass-spectra / 有機金属化学気相成長装置 / トリメチルガリウム |
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| Research Abstract |
A quadrupole mass analyzer is used to study effective decomposition reactions of monomethylhydrazine itself and mixed gas of monomethylhydrazine and trimethyhndium system using the hydrogen or nitorogen carrier gas in a growth chamber of low- pressure chemical vapor deposition apparatus.
It is found that the initial decomposition of monomethylhydrazine- hydrogen system occures at a temperature of about 200℃ and then at 400℃ with the increasing tepmerature, together with the formations of methylamine, methan, and anmonium. The methylamine is decomposed as the temperature increases above 500℃. In monomethylhydorazine- nitrogen system, those temperatures are higher than those of thejnono methylhydrazine- hydrogen system. In the monomethylhydrazine- trimethylindium system, adducts combined monomethylhydrazine with trimethylindiumare formed at room temperature.
InGaN layers continuously grown on GaN amorphous layers by a low-pressure chemical vapor phase deposition method using monomethylhydrazine- trimethylgallium- trimethylnidium were examined. It is found that the indium content of the In GaN layers was as high as 50 molepercent at 650 ℃ although the indium content in InGaN layers decreased with the increasing growth temperature from 650 to 750 ℃.
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