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SURFACE CHEMISTRY DURING SiC EPITAXIAL GROWTH USING ORGANO-SILANES

Research Project

Project/Area Number 12650025
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

SUEMITSU Maki  TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, ASSOCIATE PROFESSOR, 電気通信研究所, 助教授 (00134057)

Co-Investigator(Kenkyū-buntansha) NAKAZAWA Hideki  TOHOKU UNIVERSITY, RESEARCH INST. OF ELECTRICAL COMMUNICATION, COE RESEARCH FELLOW, 電気通信研究所, 中核的研究機関研究員
築舘 厳和  東北大学, 電気通信研究所, 日本学術振興会特別研究員
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 2001: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2000: ¥3,300,000 (Direct Cost: ¥3,300,000)
KeywordsSILICON CARBIDE / SiC / GAS-SOURCE MBE / HETEROEPITAXY / MONOMETHYLSILANE / ORGANO-SILANES / SURFACE CHEMISTRY / IN-SITU OBSERVATION
Research Abstract

SiC is a promising material for the next-generation power devices. This research, aiming at clarifying the surface chemistry during SiC epitaxy using organo-silanes as well as developing a low-temperature, high-quality SiC epitaxy, has yielded the following results.
(1) Suppression of Si out-diffusion by using Organo-Silane method: By using an organo-silane as the source gas, which contains a chemically stable Si-C bond within the molecule, the out-diffusion of the Si atoms from the substrate was found to be greatly suppressed.
(2) Development of OS-buffer method: In SiC/Si heteroepitaxy, a buffer interlayer is a must to moderate the 20% lattice mismatch between the SiC film and the Si substrate. Formerly, the buffer layer was formed with the carbonization method. The high temperature (〜900℃) required in the process, however, caused harmful surface roughness and voids in the Si substrates. In this study, a new method, named OS-buffer method, has been developed, in which organo-silane gas … More es are used to form the buffer layer in place of hydrocarbon gases. As a result, qualified bufferlayers can be grown at 600℃.
(3) Development of OS-GSMBE method: Instead of using a pair of Si- and C-source gases as in the conventional SiC epitaxy, a single source of organo-silane gas was successfully used to grow qualified SiC epitaxial films. As a result, the growth temperature could be reduced from the former 1100℃ to 900℃. Surface hydrogen was also found to be harmful in obtaining qualified films.
(4) Obtaining a single-domain SiC film on Si: The resistive heating method was found to be effective in obtaining a single-domain SiC film on Si substrates
(5) Modeling of the Si growth: By obtaining the growth rate and the hydrogen coverage at the growing surface as a function of both the substrate temperature and the disilane pressure, the growth kinetics for the Si GSMBE has been clarified. Based on the result, a new growth model has been developed, which accounts for both the temperature- and the pressure-dependence of the growth rate unifiedly. Less

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Y.Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appi. Surf. Sci.. 175-176. 43-48 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Murata: "Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy : In situ observations and detailed modeling of the growth"Appl. Phys. Lett.. 79. 746-748 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Nakazawa: "Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100)heteroepitaxy"Appl. Phys. Lett.. 79. 755-757 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Tsukidate: "Infrared study of SiH_4-adsorbed Si(100) surfaces : observation and mode assignment of new peaks"Jpn. J. Appl. Phys.. 40. 5206-5210 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Nakazawa: "Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer"Series of Material Science Forum, April, 2002 Trans Tech Publications Ltd. (Switzerland). (To be published). (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appl. Surf. Sci.. 175-176. 43-78 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Murata: "Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy. In situ observations and detailed modeling of the growth"Appl. Phys. Lett.. 79. 746-748 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Nakazawa: "Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy"Appl. Phys. Lett.. 79. 755-757 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Tsukidate: "Infrared study of SiH_4-adsorbed Si(100) surfaces: observation and mode assignment of new peaks"Jpn. J. Appl. Phys.. 40. 5206-5210 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Nakazawa: "Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer"Series of Material Science Forum. in print. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appl.Surf.Sci.. 175-176. 43-48 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Murata: "Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy : In situ observations and detailed modeling of the growth"Appl.Phys.Lett.. 79. 746-748 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Nakazawa: "Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy"Appl.Phys.Lett. 79. 755-757 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Tsukidate: "Infrared study of SiH_4-adsorbed Si(100) surfaces : observation and mode assignment of new peaks"Jpn.J.Appl.Phys.. 40. 5206-5210 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Nakazawa: "Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer"Series of Material Science Forum,April,2002 Trans Tech Publications Ltd.(Switzerland). (To be published). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Nakazawa: "Gas-Source MBE of SiC/Si using monomethylsilane"Thin Solid Films. 369. 269-272 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Nakazawa: "Formation of High Quality SiC on Si(100) at 900C using Monomethylsilane Gas-Source MBE"Materials Science Forum. 338-342. 269-272 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Nakazawa: "Dissociative adsorption of monomethylsilane (MMS) on Si (100) as revealed by comparative temperature-programmed-desorption studies on H/, C_2H_2/, and MMS/Si (100)"Appl.Surf.Sci.. 162-163. 139-145 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Suemitsu: "Transition from random to island growth mode during Si (100) -2x1 dry oxidation and its description with autocatalytic reaction model"Appl.Surf.Sci.. 162-163. 293-298 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Nakazawa: "Role of hydrogen prepairing in the hydrogen desorption kinetics from Si (100) -2x1 : effects of hydrogenating-gas and thermal history"Surf.Sci.. 465. 177-185 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Suemitsu: "Mode transition between growth and decomposition of oxides on Si (001) : Kinetically determined critical coverage for oxidation"Appl.Phys.Lett.. 77. 3179-3181 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appl.Surf.Sci.. 6791. 1-6 (2001)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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