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Fabrication Technique of Single Electron Transistor using STM-CVD Method

Research Project

Project/Area Number 12650032
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionHiroshima Kokusai Gakuin University

Principal Investigator

KANAJI Ztooru  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering Professor, 工学部, 教授 (40031059)

Co-Investigator(Kenkyū-buntansha) TANAKA Makoto  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Associate Prof., 工学部, 助教授 (90227174)
SUMOMOGI Tsunetaka  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Professor, 工学部, 教授 (10136129)
ENDOH Toshiro  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Professor, 工学部, 教授 (60069200)
MORII Takashi  Matsushita Research Institure, Staff Engineer, 主任技師
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2001: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2000: ¥1,400,000 (Direct Cost: ¥1,400,000)
KeywordsSingle Electron Device / Single Electron Transistor / Nano-Structure / Scanning Tunneling Microscope / Electron Beam Lithography / Chemical Vapour Depositon(CVD) / Vacuum / 走査トンネル顕微鏡(STM) / SET(単電子トランジスター / STM(走査型トンネル顕微鏡) / CVD(化学的蒸着成膜法) / EBL(電子ピームリングラフィー) / UHV(超高真空) / CMA(オージェー電子分光装置)
Research Abstract

Though the Single Electron Translator is noticed as a next generation technology of the electronic device, the practical application of the technology is not easy, because this device demonstrates the superiority in the case in which the geometry of it is smaller than about 1/100 of the conventional transistor. "STM-CVD method" of this study is one of the fabrication method of this nano-scale device. By this method, the organic metal gas is sprayed on the probe-tip of scanning tunneling microscope (STM), and the metal atomes are deposited on the sunbstrate by the effect of tunneling eiectrons forming the ultramicroelectrode. With this method, the electrode can be made using a usual metal, while the otner method are sometimes depend on the special chemical characters of the used metal.
A couple of extraction electrodes which has about 0.3 μ m gap was prepared during this study period on the idetical substrate, and it was tried to prepare the ultramicroelectrode using the STM-CVD method i … More n the gap between these extraction electrodes. As an organic metal gas, TMA (trimethyl aluminum) was purchased by the bomb, which is liquid in the ordinary temperature and normal pressure. The hydrogen gas was used as the conveying gas of TMA. The mixed gas gushes into the vacuumthrough a nozzle, and TMA is frozen on the substrate. The nozzle which has special structure was manufactured originally. A heating system was used so that the CVD gas may not adhere in valves, piping and the nozzle. In order to detoxicate the used CVD gas, the filters are installed at the exhaust ports of the vacuum pumps and the gas wasdischarged to the outdoors from the chimney safely. Few times, CVD gas was practically introduced into the vacuum chamber, and tried to form the frozen TMA film on the substrate, but it could not confirmed. It advanced foe the preliminary experiment which produced metal electrode by the STM probe, but the formation of the electrode was not confirmed.
In the stage at the end of this fiscal year, though the many experimental conditions were already prepared, however, at the same time, many other difficulties are also found. And the Single Electron Transistor is not yet ralized. Less

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (27 results)

All Other

All Publications (27 results)

  • [Publications] 金持 徹, 森居隆史, 西浦正倫, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(1)方法と用意した装置"真空. Vol.44 No.3. 263 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(2)SEMによる引き出し電極の作成"日本真空協会関西支部第2回研究例会資料. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(3)SEMとAFMによる基板と電極の検討"真空. Vol.44 No.3. 273 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 田中 誠, 久保隆, 森居隆史, 西浦正倫, 金持 徹: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(4)STM・CVD法の予備実験"第42回真空に関する連合講演諸演予稿集. 236 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 金持 徹, 久保 隆, 田中 誠, 西浦正倫, 森居隆史: "トンネル電子ビームを利用するリソグラフィー"第43回真空に関する連合講演会話演予稿集. 134 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 金持 徹: "10nm級超微細電極作成技術の開発とその応用(1)"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.1. 11-18 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 西浦正倫, 久保 隆, 田中 誠, 森居隆史, 金持 徹: "10nm級超微細電極作成技術の開発とその応用(2)電子ビームリソグラフイによるパラジュウム電極の作成"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.2. 13-23 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T, Kanaji. Et al: "Fabrication Technique of Single Elcctron Transistor (1) Concept and Apparatuses"SHINKUU. Vol.43 No.3. 439 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M, Nishiura. Et al: "Fabrication Technique of Single Eleectron Transistor (2) Extraction Electrode prepared by Electron-beam Lithography"SHINKUU. Vol.44 No.3. 399 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M, Nishiura. Et al: "Fabrication Technique of Single Electron Transisor (3) Studies on the Substrate and Extraction Electrode using SEM and AFM"Abstracts of 41st Japanese Vacuum cong. Oct. 343 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M, Tanaka. Et al: "Fabrication Technique of Single Electron Transisor (4) Preliminary Expcriment of STM=CVD Method"Abstracts of 42nd Japanese. Vacuum Cong. Oct.. 236 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T, Kanaji. Et al: "Lithography Using the tunneling electrons of STM"Abstracts of 43rd Japanese. Vacuum Cong. Oct.. 134 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T, Kanaji: "A Study on Fablication Technique of 10nm-class Microelectrode"Report of Hightechnology Center in Hiroshima-kokusaigakuin Univ. 11

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T, Kanaji, et al: "A Study on Fablication Technique of 10nm-class Microelectrode (2) Paradium Electrode prepared by Electron Lithography"Report of Hightechnology Center in Hiroshima-kokusaigakuin Univ. 13

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 金持 徹, 森居隆史, 西浦正倫, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(1)方法と用意した装置"真空. Vol.44 No.3. 263 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(2)SEMによる引き出し電極の作成"日本真空協会関西支部第2回研究例会資料. (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(3)SEMとAFMによる基板と電極の検討"真空. Vol.44 No.3. 273 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 田中 誠, 久保 隆, 森居隆史, 西浦正倫, 金持 徹: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(4)STM・CVD法の予備実験"第42回真空に関する連合講演会諸演予稿集. 236 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 金持 徹, 久保 隆, 田中 誠, 西浦正倫, 森居隆史: "トンネル電子ビームを利用するリソグラフィー"第43回真空に関する連合講演会諸演予稿集. 134 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 金持 徹: "10nm級超微細電極作成技術の開発とその応用(1)"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.1. 11-18 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] 西浦正倫, 久保 隆, 田中 誠, 森居隆史, 金持 徹: "10nm級超微細電極作成技術の開発とその応用(2)電子ビームリソグラフィーによるパラジュウム電極の作成"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.2. 13-23 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Mitsui,T.Urano,M.Tanaka,T.Kanaji: "Computer simulation of electron trajectories with the space charge in cascade static lens gauge"Applied Surface Science. 169-170. 747-751 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 西浦正倫,金持徹,田中誠,森居隆史: "超高真空温度可変STMによる超微細電極の作製(3)STMとAFMによる基板と電極の検討"真空. 44巻・3号(未定). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 谷川立,川井望,林貴子,三井剛,浦野俊夫,田中誠,金持徹: "直列静電レンズ型電離真空計におけるフィラメント位置の最適化"真空. 44巻・3号(未定). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 久保隆,田中誠: "容量結合型高周波放電の陰極構造依頼性に関する研究"真空. 44巻・3号(未定). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 久保隆,田中誠: "自己補償型ラングミュアプローブの作製について"広島国際学院大学研究報告. 33巻. 1-8 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Sunada,T.endo,T.Sumomogi,H.Maeta: "Defference of Structurebetween Pure Al and Al-30at%Cu Nanoclusters"広島国際学院大学研究報告. 33巻. 57-62 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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