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Study of Strain Relaxation Mechanisms of Semiconductor Nanostructures by means of Atomistic Simulation

Research Project

Project/Area Number 12650074
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Materials/Mechanics of materials
Research InstitutionThe University of Electro-Communications

Principal Investigator

SHINTANI Kazuhito  The University of Electro-Communications, Faculty of Electro-Communications, Professor, 電気通信学部, 教授 (00162793)

Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2000: ¥1,100,000 (Direct Cost: ¥1,100,000)
Keywordsnanotechnology / molecular-dynamics simulation / nanostructures / quantum dots / epitaxy / strain relaxation / carbon nanotubes / Poisson's ratio / 材料ナノ構造 / カボンナノチューブ / 半導体ナノ構造 / 結晶成長 / 表面ステップ
Research Abstract

1. How the behavior of a Si adatom or a Ge adatom deposited on the Si substrate and the morphology of the deposited layers in the initial period depend on the substrate temperature was investigated by the molecular-dynamics simulations with the Stillinger-Weber potential and the Tersoff one. For Si/Si homo-deposition processes, it was concluded that (1) the deposited layers form an amorphous structure at 300K and 400K, (2) the deposited atoms construct the alternately perpendicular dimer rows in the successive atomic layers to form an epitaxial structure at 700K and 1000K, which agrees with experimental results, (3) the ranges of the trajectories of a single deposited atom at 300K and 400K do not extend beyond, those at 500K are of the order of, and those at 700K and 1000K extend beyond the length between the nearest-neighbor atoms at the substrate surface, which corresponds with the different morphologies of the deposited layers at the temperatures. For Ge/Si hetero-deposition process … More es, it was elucidated that (4) at 1000K, the deposited layers with the deposition energy 0.2eV grow in the layer-by-layer mode until the initial two to four monolayers are deposited, and then the growth mode changes into the amorphous one while the deposited layers form amorphous stractures in the other conditions.
2. The temperature dependence of the strain distributions within Si/Ge/Si quantum dot structures was investigated using the molecular-dynamics simulation with the Tersoff potential, and the phonon densities of states for the optical mode were obtained. It was concluded that (1) the strain distributions within quantum dots computed by the molecular-dynamics method, at finite temperatures qualitatively agree with those computed by the conjugate-gradient method although the normal strain components perpendicular to the base of the quantum dots to the former are larger than those in the latter, and that (2) the positions of the peaks of the phonon densities of states for the optical mode in the quantum dots shift from those in bulk crystals
3. The mechanical properties of carbon naotubes were investigated by the molecular-dynamics simulation. The interaction between carbon atoms were calculated by using the Brenner potential. The Poisson's ratios and the Young's modulus were obtained for the naotubes models with the same diameter and with six chiral angles. It was conluded that (1) the Poisson's ratios of naotubes depend on their chiral angles, (2) the Young's modulus of nanotubes does not depends on their chiral angles, and (3)the elastic region in the deformations of nanotubes are extremely broad. Less

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (43 results)

All Other

All Publications (43 results)

  • [Publications] Y.Kikuchi: "Strain profiles in pyramidal quantum dots by means of atomistic simulation"Journal of Applied Physics. 89. 1191-1196 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Shintani: "Atomistic study of strain profiles in semiconductor quantum dot structures"Materials Research Society Symposium Proceedings (Semiconductor Quantum Dots II). 642. J3.2.1-J3.2.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Shintani: "Atomistic simulations of deposition processes of epitaxial layers"Materials Research Society Symposium Proceedings (Current Issues in Heteroepitaxial Growth-Stress Relaxation and Self Assembly). 696. N3.1.1-N3.1.6 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Narita: "Atomistic study of mechanical properties of carbon nanotubes"Materials Research Society Symposium Proceedings (Making Functional Materials with Nanotubes). 706. Z9.7.1-Z9.7.6 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 本多 敦史: "薄膜のひずみ緩和機構に及ぼす表面ステップの影響(分子動力学シミュレーション)"日本材料科学会平成12年度学術講演大会講演予稿集. 105-108 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 杉井 弘嗣: "分子動力学法による半導体ナノ構造の解析"日本機械学会平成12年度材料力学部門講演会講演論文集. No.00-19. 539-540 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 西村昌泰: "シリコン原子の表面マイグレーションの分子動力学シミュレーション"日本機械学会2001年度年次大会講演論文集. No.01-1(I). 343-344 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 中島隆明: "シリコンMBEの分子動力学シミュレーション"日本機械学会関東支部第8期総会講演会講演論文集. No.020-1. 537-538 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 成田隆慶: "分子動力学シミュレーションによるカーボンナノチューブの力学的特性の解析"日本機械学会関東支部第8期総会講演会講演論文集. No.020-1. 539-540 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 大林克至: "ねじれ結合コンプラアイント基板上のヘテロエピタキシャル層におけるひずみ緩和機構の解析"日本機械学会平成12年度材料力学部門講演会講演論文集. No.00-19. 541-542 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 大林克至: "ねじれ結合薄膜基板上のヘテロエピタキシャル層のひずみ緩和に及ぼすらせん転位列の影響"日本機械学会第13回計算力学講演会講演論文集. No.00-17. 549-550 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 杉井弘嗣: "半導体ナノ構造の分子動力学シミュレーション"日本機械学会関東支部第7期総会講演会講演論文集. No.010-1. 103-104 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 宮田 剛: "転位の動力学数値シミュレーション"日本機械学会関東支部第7期総会講演会講演論文集. No.010-1. 105-106 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 大林克至: "ねじれ接合基板上薄膜の表面モルフォロジーの解析"日本材料科学会平成13年度学術講演大会講演予稿集. 79-82 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 中島隆明: "転位の相互作用の分子動力学シミュレーション"日本機械学会2001年度年次大会講演論文集. No.01-1(I). 341-342 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Kikuchi: "Strain profiles in pyramidal quantum dots by means of atomistic simulation"Journal of Applied Physics. Vol.89. 1191-1196 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Shintani: "Atomistic study of strain profiles in semiconductor quantum dot structures"Materials Research Society Symposium Proceedings (Semiconductor Quantum Dots II). Vo.642. J3.2.1-J.3.2.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Shintani: "Atomistic simulations of deposition processes of epitaxial layers"Materials Reserach Society Symposium Proceedings (Current Issues in Heteroepitaxial Growth - Stress Relaxation and Self Assembly). Vol.696. N3.1.1-N3.1.6 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Narita: "Atomistic study of mechanical properties of carbon nanotubes"Materials Research Society symposium Proceedings (Making Functional Materials with Nanotubes). Vol.706. Z9.7.1-Z9.7.6 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Honda: "Effect of surface steps on the strain relaxation mechanisms of thin solid films : Molecular dynamics simulation"Proceedings of the 2000 Annual Meeting of the Materials Science Society of Japan. 105-108 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Sugii: "Analysis of semiconductor nano-structures by the method of molecular dynamics"Proceedings of the 2000 Annual Meeting of the Japan Society of Mechanical Engineers/Materials and Mechanics Division. No.00-19. 539-540 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Obayashi: "Analysis of strain relaxation mechanisms in heteroepitaxial layers on twist-bonded compliant substrates"Proceedings of the 2000 Annual Meeting of the Japan Society of Mechanical Engineers/Materials and Mechanics Division. No.00-19. 541-542 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Obayashi: "Influence of screw dislocations on strain relaxation in heteroepitaxial films over twist-bonded substrates"Proceedings of the 13th Computational Mechanics confedrence of the Japan society of Mechanical Engineers. No.00-17. 549-550

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Sugi: "Molecular dynamics simulation of semiconductor nano-structures"Proceedings of the 7th-term Meeting of the Kanto Branch of the Japan Society of the Mechanical Engineers. No.010-1. 103-104

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Miyata: "Numerical simulation of dislocation dynamics"Proceedings of the 7th-term Meeting of the Kanto Branch of the Japan Society of the Mechanical Engineers. No.010-1. 105-106

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Obayashi: "Analysis of surface morphology of thin films on twist-bonded substrates"Proceedings of the 2001 Annual Meeting of the Materials Science Society of Japan. 79-82 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Nakajima: "Molecular dynamics simulation of interaction between dislocations"Proceeding of the 2001 Annual Meeting of the Japan Society of Mechanical Engineers. No.01-1(I). 341-342 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Nishimura: "Molecular dynamics simulation of surface migration of silcon atoms"Proceedings of the 2001 Annual Meeting of the Japan Society of Mechanical Engineers. No.01-1(I). 343-344 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Nakajima: "Molecular dynamics simulation of silicon MBE"Proceedings of the 8th-term Meeting of the Kanto Branch of the Japan Sociedty of the Mechanical Engineers. No.020-1. 537-538

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Narita: "Molecular-dynamics study of mechanical properties of carbon nanotubes"Proceedings of the 8th-term Meeting of the Kanto Branch of the Japan Society of the Mechanical Engineers. No.02w0-1. 539-540

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Shintani: "Atomistic simulations of deposition processes of epitaxial layers"Materials Research Society Symposium Proceedings (Current Issues in Heteroepitaxial Growth-Stress Relaxation and Self Assembly). 696. N3.1.1-N3.1.6 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Narita: "Atomistic study of mechanical propertes of carbon nanotubes"Materials Research Society Symposium Proceedings (Making Functional Materials with Nanotubes). 706. Z9.7.1-Z9.7.6 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 大林 克至: "ねじれ接合基板上薄膜の表面モルフォロジーの解析"日本材料科学会平成13年度学術講演大会講演予稿集. 79-82 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 中島 隆明: "転位の相互作用の分子動力学シミュレーション"日本機械学会2001年度次大会論文集. 01-1(I). 341-342 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 西村 昌泰: "シリコン原子の表面マイグレーションの分子動力学シミュレーション"日本機械学会2001年度年次大会講演論文集. 01-1(I). 343-344 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 中島 隆明: "シリコンMBEの分子動力学シミュレーション"日本機械学会関東支部第8期総会講演会講演論文集. 020-1. 537-538 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 成田 隆慶: "分子動力学シミュレーションによるカーボンナノチューブの力学的特性の解析"日本機械学会関東支部第8期総会講演会講演論文集. 020-1. 539-540 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Kikuchi: "Strain profiles in pyramidal quantum dots by means of atomistic simulation"Journal of Applied Physics. 89. 1191-1196 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Shintani: "Atomistic study of strain profiles in semiconductor quantum dot structures"Materials Research Society Proceedings (Semiconductor quantum dots II, edited by R.Leon et al.) . 642. J3.2.1-J3.2.6 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 本多敦史: "薄膜のひずみ緩和機構に及ぼす表面ステップの影響(分子動力学シミュレーション)"日本材料科学会平成12年度学術講演大会講演予稿集. 105-108 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 杉井弘嗣: "分子動力学法による半導体ナノ構造の解析"日本機械学会平成12年度材料力学部門講演会講演論文集. No.00-19. 539-540 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 杉井弘嗣: "半導体ナノ構造の分子動力学シミュレーション"日本機械学会関東支部第7期総会講演会. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 宮田剛: "転位の動力学数値シミュレーション"日本機械学会関東支部第7期総会講演会. (2001)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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