| Co-Investigator(Kenkyū-buntansha) |
OZAKI Shunji Faculty of Engineering, Gunma University, Tutor, 工学部, 助手 (80302454)
MIYAZAKI Takayuki Faculty of Engineering, Gunma University, Assistant Professor, 工学部, 助教授 (80110401)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2001: ¥100,000 (Direct Cost: ¥100,000)
Fiscal Year 2000: ¥1,600,000 (Direct Cost: ¥1,600,000)
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| Research Abstract |
1.The following results were obtained on twin Grimm-Sommerfeld (GS) materials, ZnIn_2Te_4, ZnGa_2Te_4, and CdGa_2Te_4 :
(1) Succeed in growing bulk twin GS crystals.
(2) Succeed in obtaining bulk twin GS materials, although they contain crystalline components as inclusions.
(3) It is shown that it is possible to prepare bulk amorphous and crystalline samples of optical grade by chemomechanical polishing. The optical properties of these materials are determined by spectroscopic ellipsometry.
(4) The optical and dielectric properties of ZnIn_2Te_4 have been studied by performing band-structure calculation and by comparing these calculated results with the experimental data.
(5) Succeed in measuring photoluminescence spectra of twin GS crystals.
2. The temperature dependence of the critical-point parameters for the III-V compound semiconductor, GaP, and II-VI compound semiconductors, CdTe, ZnTe, CdS, and ZnO, have been determined by performing photoreflectance measurements. The electroreflectance measurements have also been performed on III-V semiconductor alloy Ga_<0.5>In_<0.5>P.
3. Chemical treatment effects of silicon surfaces in TMAH (organic alkaline), NaF, NH_4HF_2 solutions, etc. have been studied using spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and contact-angle measurements. GaN and InN films have also been deposited on silicon substrates by reactive rf-magnetron sputtering. Properties of these III-V nitride films have been investigated using X-ray diffraction, spectroscopic ellipsometry, and atomic force microscopy.
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