| Project/Area Number |
12650309
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
ISHIDA Akihiro Shizuoka University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (70183738)
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| Co-Investigator(Kenkyū-buntansha) |
INOUE Yoku Shizuoka University, Faculty of Engineering, Research Associate, 工学部, 助手 (90324334)
FUJIYASU Hiroshi Shizuoka University, Faculty of Engineering, Professor, 工学部, 教授 (60022232)
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| Project Period (FY) |
2000 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2002: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2001: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2000: ¥2,400,000 (Direct Cost: ¥2,400,000)
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| Keywords | Quantum well / Cascade laser / IV-VI semiconductor / Nitride / AlN / Mid infrared / Intersubband / PIEZO / AlN / 窒化物半導体 / 中赤外線レーザ / 量子カスケード / 超格子 / A1N / PbSnTe / 赤外線レーザ / 発光素子 / サブバンド間発光 |
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| Research Abstract |
We studied IV-VI semiconductor films and quantum wells for interband mid-infrared laser applications, and AlGaN-based quantum wells for intersubband quantum-cascade laser applications. In IV-VI semiconductors, we prepared PbSrS/PbS lasers for 3-4μm region and PbCaTe/PbTe lasers for 4-6μm region, and obtained pulsed laser operation up to 235K in the PbCaTe/PbTe MQW laser. We also studied PbSnCaTe films and PbSnCaTe/PbSnTe superlattices for longer wavelength laser applications around 6-20μm. The heterojunction becomes type-I which is useful for effective confinements of electrons and holes in the PbSnTe active layer. In the AlGaN system for intersubband laser applications, we prepared high quality AlGaN based films and superlattices by hot wall epitaxy. We proposed (AlN)_1/(GaN)_n short-period superlattices consisting of one atomic layer AlN and around 10 atomic layers of GaN for mid-infrared intersubband lasers, and also proposed [(AlN)_1/(GaN)_<n1>]_m/(AlN)_<n2> quantum cascade structures which utilize large polarization fields in the AlN/GaN to inject electrons into higher subbands. We prepared the short-period superlattices and the quantum-cascade structures by hot wall epitaxy and well-controlled structures were confirmed by X-ray diffraction and TEM measurements.
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