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Study of resonant tunneling through single quantum dots by atomic force microscopy

Research Project

Project/Area Number 12650313
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWakayama University

Principal Investigator

TANAKA Ichiro  Wakayama University, Systems Engineering, Associate Professor, システム工学部, 助教授 (60294302)

Co-Investigator(Kenkyū-buntansha) SAKAKI Hiroyuki  University of Tokyo, Institution for Industrial Science, Professor, 生産技術研究所, 教授 (90013226)
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2001: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2000: ¥1,900,000 (Direct Cost: ¥1,900,000)
Keywordsquantum dot / InAs / self-assembly / conductive tip / atomic force microscopy / resonant tunneling / RTD / GaAs
Research Abstract

1. Resonant tunneling through a single InAs quantum dot probed via novel over layered quantum dot electrode
Electrons tunneling through the quantum levels of a single self-assembled InAs quantum dot (QD) have been observed using an atomic force microscope (AFM) with a conductive tip. The unique structure employed here consists of two layers of InAs QDs, which were separated by thin undoped GaAs barrier layer. When the conductive tip is in contact, the naked surface InAs QD functions as a nanoscale electrode to where electrons from the n^+-GaAs substrate flow via a buried QD. In the current-voltage characteristics data taken at 〜120 K, resonance peaks are observed at different bias voltages depending on the size of the top InAs nano-electrodes. This is due to the size dependence of the surface potential on the InAs QDs.
2. Control of the size and density of InAs quantum dots by molecular beam epitaxy
For the purpose of the resonant tunneling measurement, the InAs QD growth technique by mol … More ecular beam epitaxy was highly developed to control their size and density. Namely, we demonstrated the size and density of InAs QDs are changed from 15 to 45 nm and from 〜10^8 to 〜10^<11> cm^<-2>, respectively by precise control of the growth conditions.
3. Resonant tunneling through a single InAs quantum dot embedded in a micro RTD
This growthcontrol is not only essential for the fabrication of the above-mentioned double layered InAs QD structure but also have realized a micro resonant tunneling diode which contains only one QD in it. We also studied resonant tunneling transport of electrons through a single InAs QD by forming a micron-size Schottky diode in a GaAs/n+-GaAs wafer with very low density (〜4x10^8 cm^<-2>)InAs QDs embedded in the top GaAs layer. As the diode defined by electron beam lithography and chemical etching has a size of 〜1μm^2 and the edges of each diode are depleted, the number of active Ods contained each diode can be reduced to less than unity in average. Current-voltage measurements were performed using a conductive-tip AFM at 〜130 K, and current peaks caused by electrons resonantly tunneling through the energy levels of single QDs were successfully observed. Less

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] Ichiro Tanaka, I.Kamiya, H.Sakaki, M.Fujimoto: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell microscopy"PHYSICA E. 7. 373-376 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I.Kamiya, Ichiro Tanaka, O.Ohtsuki, H.Sakaki: "Density and size control of self-assembled InAs quantum dot : preparation of very low density dots by post annealing"PHYSICA E. (印刷中). (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I.Kamiya, Ichiro Tanaka, H.Sakaki 他: "Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure"PHYSICA E. (印刷中). (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Ichiro Tanaka, I. Kamiya, H. Sakaki, M. Fujimoto: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell microscopy"PHYSICAE. 7. 373-376 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Kamiya, Ichiro Tanaka, O. Ohtsuki, H. Sakaki: "Density and size control of self-assembled InAs quantum dot : preparation of very low density dots by post annealing"PHYSICAE. (in printing).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Kamiya, Ichiro Tanaka, K. Tanaka, F. Yamada, Y. Shinozuka, H. Sakaki: "Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure"PHYSICAE. (in printing).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Ichiro TANAKA, I.KAMIYA, H.SAKAKI, M.FUJIMOTO: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell microscopy"PHYSICA E. 7. 373-376 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] I.Kamiya, Ichiro Tanaka, O.Ohtsuki, H.Sakaki: "Density and size control of self-assembled InAs quantum dot : preparation of very low density dots by post annealing"PHYSICA E. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] I.Kamiya, Ichiro Tanaka, H.Sakaki他: "Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure"PHYSICA E. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Ichiro TANAKA,I.KAMIYA,H.SAKAKI,M.FUJIMOTO: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell microscopy"Physica E. 7. 373-376 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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