| Project/Area Number |
12792014
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| Research Category |
Grant-in-Aid for University and Society Collaboration
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | Nagasaki University |
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Principal Investigator |
EGASHIRA Makoto Nagasaki University, Faculty of Engineering, Professor, 工学部, 教授 (60037934)
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| Co-Investigator(Kenkyū-buntansha) |
WADA Kenji Sasebo National College of Technology, Professor, 教授 (30044457)
HYODO Takeo Nagasaki University, Faculty of Engineering, Research Associate, 工学部, 助手 (70295096)
SHIMIZU Yasuhiro Nagasaki University, Graduate School of Science and Technology, Associate Professor, 生産科学研究科, 助教授 (20150518)
KAWAHARA Akihiko Saga Ceramic Research Laboratory, Fellow, 特別研究員
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| Project Period (FY) |
2000 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥29,600,000 (Direct Cost: ¥29,600,000)
Fiscal Year 2002: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2001: ¥26,600,000 (Direct Cost: ¥26,600,000)
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| Keywords | Slide-Off Transfer Printing / Semiconductor Gas Sensor / Hydrogen / Nitrogen Oxide / VOC / Chemical Surface Modification / Diethoxydimethylsilane / Barium Titanate / 転写印刷 / ヘテロ積層 / 半導体センサ / 可燃性ガス / 強誘電体 / 芳香族系有機化合物 / ゼータ電位 / NOx |
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| Research Abstract |
Fabrication of high-sensitive semiconductor gas sensors and application to other electronic devices by utilizing a slide-off transfer printing were attempted as below.
1. Inflammable gas sensors Hetero-stacking of a pure SnO_2 layer over a Pt-loaded SnO_2 layer (SnO_2/Pt-SnO_2 sensor) led to the highest increase in H_2 sensitivity, whereas H_2 sensitivity of a Pt-SnO_2/SnO_2 sensor was much lower than that of the pure SnO_2 sensor. Stacking of a SnO_2-based layer over a TiO_2 layer also led to an increase in the H_2 sensitivity with a decrease in sensor resistance. On the other hand, NiO-loaded In_2O_3-based sensors showed high sensitivity to benzene and monochlorobenzene. Moreover, an SnO_2 sensor with a porous substrate layer (the porosity : ca. 56.2%) between the SnO_2 layer and a dense alumina substrate showed higher n-C_4H_<10> sensitivity compared with that fabricated directly on a dense alumina substrate.
2. NO_x sensor Heterolayer Pt-Al_2O_3/WO_3 and Cr_2O_3-SnO_2 single layer se
… More
nsor were confirmed to operate as a total NO_x sensor ZnO-WO_3/ZnO sensor showed high NO_2 sensitivity and short response/recovery properties. In addition, introduction of a porous alumina sub-layer between a sensing layer and a dense substrate was effective to improve the NO_2 sensitivity and the response/recovery properties.
3. Chemical surface modification of SnO_2 powder with ethoxysilane An SiO_2 thin film induced by the surface modification with diethoxydimethylsilane was found to exist as a grain-boundary phase from TEM observation. The limitation of neck growth between SnO_2 particles by the SiO_2 thin film coating is anticipated to be responsible for increasing the potential barrier height and improving the sensing properties to inflammable gases such as H_2, CH_4 and C_3H_8.
4. Microstructure control of BaTiO_3 thick films Composition of a slurry containing BaTiO_3 fine powder prepared hydrothermally, some sintering aids, printing oil and 2-propanol was optimized for being utilized to a spin-coating technique. In consequence, dense and thick BaTiO_3 films (10-20μm) could be fabricated on a silicon substrate after calcination at 1050-1120℃. Less
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