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高・強誘電体膜を用いた極低電圧・超低消費電力FET,及び高性能新機能素子の開発

Research Project

Project/Area Number 13025213
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionThe University of Tokyo

Principal Investigator

平本 俊郎  東京大学, 生産技術研究所, 教授 (20192718)

Co-Investigator(Kenkyū-buntansha) 石原 宏  東京工業大学, フロンティア創造共同研究センター, 教授 (60016657)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥84,200,000 (Direct Cost: ¥84,200,000)
Fiscal Year 2003: ¥28,000,000 (Direct Cost: ¥28,000,000)
Fiscal Year 2002: ¥28,000,000 (Direct Cost: ¥28,000,000)
Fiscal Year 2001: ¥28,200,000 (Direct Cost: ¥28,200,000)
Keywords半導体MOSFET / 低消費電力 / 基盤バイアス / しきい値 / 強誘電体FET / 不揮発性ラッチ回路 / FeRAM / 低スタンバイ消費電力 / 基板バイアス / 強誘電体ゲートFET / 不揮発性SRAM回路 / 強誘電体SPICEモデル / 基板バイパス / しきい値電圧 / 不揮発生SRAM回路
Research Abstract

低電圧で動作する超低消費電力・高性能論理デバイスおよび高機能を有する強誘電体ゲートFETの検討を行った。論理デバイスでは、完全空乏型のSOI MOSFETに基板バイアス効果を適用することにより、超低消費電力と高速性を実現する方策について検討した。SOI MOSFETにおいてしきい値電圧を有効に変化させる方法として、基板バイアス係数可変MOSFETという全く新しいデバイスを提案した。埋込酸化膜直下の空乏層の伸縮を利用して、動作時には基板バイアス係数を小さくして高速動作を可能とし、待機時には基板バイアス係数を大きくして待機時電流を抑制する。デバイスシミュレーションの結果、このデバイスが予想通り動作することを確認した。また、実験により、基板バイアス係数が実際に変化していることを確認した。
一方、強誘電体ゲートFETは、集積回路の機能を高め、その機能を不揮発性化することができる。本年度は特性改善に関して取り組み、強誘電体膜とシリコン基板との間に挿入するバッファ層にハフニウム酸化膜を用いることにより、データ保持期間を10日以上に長くすることができた。また、このデバイスを不揮発性ラッチ回路に用いる場合の最適回路構成について検討し、CMOSインバータの個々のFETに強誘電体キャパシタを配置するよりも、両FETの入力を一体化したインバータ回路としての入力端子に強誘電体キャパシタを接続する方が回路の安定性を高められることを明らかにした。さらに、この回路を実際に作製して動作の検証を行った。

Report

(3 results)
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (32 results)

All Other

All Publications (32 results)

  • [Publications] T.Hiramoto, T.Saito, T.Nagumo: "Future Electron Devices and SOI Technology -Semi-Planar SOI MOSFETs with Sufficient Body Effect-"Japanese Journal of Applied Physics. Vol.42,Part1.No.4B. 1975-1978 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Nagumo, T.Hiramoto: "Current Drive Improvement by Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable Threshold Voltage CMOS"Japanese Journal of Applied Physics. Vol.42,Part1.No.4B. 1988-1992 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Q.Liu, T.Sakurai, T.Hiramoto: "Optimum Device Consideration for Standby Power Reduction Scheme Using Drain Induced Barrier Lowering (DIBL)"Japanese Journal of Applied Physics. Vol.42,Part1.No.4B. 2171-2175 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Im, T.Inukai, H.Gomyo, T.Hiramoto, T.Sakurai: "VTCMOS characteristics and its optimum conditions predicted by a compact analytical model"IEEE, Transactions on Very Large Scale Integration (VLSI) Systems. 755-761 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] G.Tsutsui, T.Nagumo, T.Hiramoto: "Enhancement of Adjustable Threshold Voltage Range by Substrate Bias Due to Quantum Confinement in Ultra Thin Body SOI pMOSFETs"IEEE Transactions on Nanotechnology. Vol.2,No.4. 314-318 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Fujisaki, K.Iseki, H.Ishiwara, M.Mao, R.Bubber: "Al2O3/Si3N4 stacked insulators for 0.1mm gate metal-oxide-semiconductor transistors realized by high-density Si3N4 buffer layers"Appl.Phys.Lett.. Vol.82,No.22. 3931-3933 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] B.J.Koo, H.Ishiwara: "Characteristics of paired Bi4-xLaxTi3O12 (BLT) capacitors suitable for 1T2C-type FeRAM"Jpn.J.Appl.Phys.. Vol.42,Part1.No.5A. 2660-2666 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Kawashima, T.Kijima, H.Ishiwara: "Ferroelectric characteristics control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 films by addition of silicates and germinates"Jpn.J.Appl.Phys.. Vol.42,Part1.No.4B. 2037-2040 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Kijima, H.Ishiwara: "Preparation of ferroelectric thin films using sol-gel solutions dissolved in supercritical carbon dioxide"Jpn.J.Appl.Phys.. Vol.42,Part2.No.4B. L404-L405 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] X.Wang, H.Ishiwara: "Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films"Appl.Phys.Lett.. Vol.82,No.15. 2479-2481 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] B.J.Koo, H.Ishiwara: "Characteristics of 1T2C-type ferroelectric memory with paired Bi4-xLaxTi3O12 (BLT) capacitors"J.Korean Phys.Soc.. Vol.42. S1362-S1365 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Inukai: "Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)"Japanese Journal of Applied Physics. Vol.41, Part1, No.4B. 2312-2315 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Saito: "Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs"IEICE Transactions on Electronics. Vol.E85-C, No.5. 1073-1078 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Hiramoto: "Future Electron Devices and SOI Technology -Semi-Planar SOI MOSFETs with Sufficient Body Effect -"Japanese Journal of Applied Physics. Vol.42, Part1, No.4B(採択決定). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Nagumo: "Current Drive Improvement by Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable Threshold Voltage CMOS"Japanese Journal of Applied Physics. Vol.42, Part1, No.4B(採択決定). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S-K.Kang, H.Ishiwara: "Characteristics of LaAlO3 as insulating buffer layers of ferroelectric-gate FETs"Jpn. J. Appl. Phys.. 41,11B. 6899-6903 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] B-E.Park, H.Ishiwara: "Formation of LaAO_3 films on Si(100) substrates using molecular beam deposition"Appl. Phys. Lett.. 82,8. 1197-1199 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Hiramoto, M.Takamiya, H.Koura, T.Inukai, H.Gomyo, H.Kawauchi, T.Sakurai: "Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)"Japanese Journal of Applied Physics. Vol.40,Part1, No.4B. 2854-2858 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Takamiya, T.Hiramoto: "High Drive-Current Electrically Induced Body Dynamic Threshold SOI MOSFET (EIB-DTMOS) with Large Body Effect and Low Threshold Voltage"IEEE Transactions on Electron Devices. Vol.48,No.8. 1633-1640 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Saito, T.Saraya, T.Inukai, H.Majima, T.Nagumo, T.Hiramoto: "Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs"IEICE Transactions on Electronics. (to be published). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Inukai, H.Im, T.Hiramoto: "Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS"Japanese Journal of Applied Physics. Vol.41,Part1,No.4B(to be published). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] X.Wang, H.Ishiwara: "Improvement of electrical property of Sol-gel derived lead zircone titanate thin films by multiple rapid thermal annealing"Japanese Journal of Applied Physics. <40>Part1.No.12. 7002-7006 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] X.Wang, H.Ishiwara: "Sol-gel derived ferroelectric Pb(Zr1-XTiX)O3-SiO2-B2O3 glass-ceramic thin films formed at relatively low annealing temperatures"Japanese Journal of Applied Physics. <40>[9B]. 5547-5550 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S-M.Yoon, H.Ishiwara: "Memory operations of 1T2C-type ferroelectric memory cell with excellent date retention characteristics"IEEE Trans. on Electron Devices. Vol.48,No.9. 2002-2008 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] B-E.Park, H.Ishiwara: "Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structure"Appl. Phys. Lett. Vol.79,No.6. 806-808 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Ogasawara, S-M.Yoon, H.Ishiwara: "Fabrication and characterzation of 1T2C-type ferroelectric memory cell"IEICE Trans. on Electronics. Vol.84-C, No.6. 771-776 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Ogata, H.Ishiwara: "A model for high frequency C-V characteristics of ferroelectric capacitors"IEICE Trans. on Electronics. Vol.84-C, No.6. 777-784 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Tamura, A.Arimoto, H.Ishiwara: "A paeallel element model for simulation switching response of ferroelectric capacitors"IEICE Trans. on Electronics. Vol.84-C, No.6. 785-790 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S-M.Yoon, H.Ishiwara: "Write and read-out operation of novel 1T2C-type ferroelectric memory cells with an array structure"Jpn. J. Appl. Phys.. Vol.40,Part2, No.5A. L449-L452 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Kijima, Y.Fujisaki, H.Ishiwara: "Fabrication and characterization of Pt/(Bi, La)4Ti3O12/Si3N4/Si metal-ferroelectric-insulator-semiconductor structure for FET-type ferroelectric memory applications"Jpn. J. Appl. Phys. Vol.40,Part1, No.4B. 2977-2982 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Yamamoto, T.Kato, H.Ishiwara: "A novel simulation program with integrated circuit emphasis(SPICE) model of ferroelectric capacitors using Schmitt-trigger circuit"Jpn. J. Appl. Phys.. Vol.40,Part1,No.4B. 2928-2934 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] E.Tokumitsu, K.Okamoto, H.Ishiwara: "Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor(MFTJS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures"Jpn. J. Appl. Phys.. Vol.40,Part1,No.4B. 2911-2916 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2018-03-28  

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