| Project/Area Number |
13304014
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Astronomy
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| Research Institution | Institute of Space and Astronautical Science |
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Principal Investigator |
TAKAHASHI Tadayuki Japan Aerospace Exploration Agency, ISAS High Energy Astrophysics, Professor, 宇宙科学研究本部高エネルギー天文学研究系, 教授 (50183851)
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| Co-Investigator(Kenkyū-buntansha) |
OZAKI Masanobu Japan Aerospace Exploration Agency, ISAS High Energy Astrophysics, Research Associate, 宇宙科学研究本部高エネルギー天文学研究系, 助手 (90300699)
NOMACHI Masaharu OSAKA UNIVERSITY, Graduate School of Science, Professor, 大学院・理学研究科, 教授 (90208299)
KURODA Yoshikatsu Mitsubishi Heavy Industries, LTD., Nagoya Guidance & Propulsion Systems Works, Manager, 名古屋誘導推進システム製作所, 課長(研究職)
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| Project Period (FY) |
2001 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000)
Fiscal Year 2003: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2002: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000)
Fiscal Year 2001: ¥26,390,000 (Direct Cost: ¥20,300,000、Indirect Cost: ¥6,090,000)
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| Keywords | CdTe / CZT / CdZnTe / Pixel Detector / Radiation Detector / Gamma-ray / Detector |
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| Research Abstract |
Based on single crystal growth by the Travelling Heater Method (THM-CdTe) wafers, we have developed CdTe detectors with high energy resolution for both planar and pixel configurations. We have demonstrated that the wafer shows good uniformity when we make a large area CdTe detector with planar electrodes. According to measurements using a collimated γ-ray beam from an ^<241>Am source, the location of the peak in the pulse height distribution is obtained to within 0.1 % and the variation of the area of the 60 keV peak is less than 0.9 %, regardless of the position in the 21 mm×21 mm surface. We have developed a large area CdTe pixel detectors. The detector has an area of 3.2 cm×3.2 cm and a thickness of 0.5 mm. Pixel size is 2 mm×2 mm. The energy resolution is 1.6 keV (FWHM) for 60 keV at 0 degree. In order to have ASIC with capabilities of both imaging and spectroscopy, we have developed o kinds of ASICs based on 0.35 μ CMOS technology. We have succeeded to demonstrate the readout scheme from pixels as well as the basic function of pulse processing.
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