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Development of nm-RBS equipment

Research Project

Project/Area Number 13305007
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionKochi University of Technology

Principal Investigator

NARUSAWA Tadashi  Kochi University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (30299383)

Co-Investigator(Kenkyū-buntansha) YAMAMOTO Tetsuya  Kochi University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (30320120)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥54,470,000 (Direct Cost: ¥41,900,000、Indirect Cost: ¥12,570,000)
Fiscal Year 2003: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2002: ¥20,020,000 (Direct Cost: ¥15,400,000、Indirect Cost: ¥4,620,000)
Fiscal Year 2001: ¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
KeywordsGlass capillary / High energy ion beam / RBS / PIXE / Ion beam process / ガラスキャピラリー / 収束イオンビーム / ナノテクノロジー / リソグラフィー / MEMS / 収集イオンビーム
Research Abstract

In this study, we have developed the focusing technique of MeV ion beams by means of tapered glass capillary optics. The glass capillary optics are formed by a puller as to have inlet diameters of about 1 mm and outlet diameters of sub-microns. Impingent MeV ions to such optics are reflected by the inner wall several times. In the feasibility tests, 2MeV He+ ion beams are forwarded to the capillary. The capillary has 1mm inlet diameter and 300nm outlet diameter. As the results, actually more or less about 1%, is emitted through the outlet without significant energy loss. Compared with the conventional micro-ion beam facilities, the present method is certainly simple and low-cost, thus providing an easy way of several hundred nm ion beams. As the application, we have measured Si-LSI tips by RBS measurement. We have confirmed that the area resolution is less than 1um and non destruction 3D measurement is possible. We do not know the detailed mechanism of beam focusing exactly yet but several origins can be contemplated. The conceivable effect is the charging-up of the glass wall. Irradiation and embedding of the hi

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21. 1671-1674 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 原田整 他: "CoSi2/Si(001)エピタキシャル成長"表面科学. 24. 455-460 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Nebiki, T.Yamamoto, T.Narusawa, M.B.H.Breese, E.J.Teo., F.Watt: "Focusing of MeV Ion Beams by Means of Tapered Glass Capillary Optics"J. Vac. Sci. Technol.. A21. 1671-1674 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Harada, T.Narusawa, K.Ishida, K.Hirose, Y.Miura: "Epitaxial Growth of CoSi2 on Si(OO1) Surface"HYOMEN KAGAKU. 24-8. 455-460 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Ishida et al.: "Epitaxial Growth of CoSi_2 on Hydrogen-Terminated Si(001)"Appl.Phys.Lett.. Vol.82,No.12. 1842-1844 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21(5). 1671-1674 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 原田整 他: "CoSi_2/Si(001)エピタキシャル成長"表面科学. 21(8). 455-460 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.-M.Wang et al.: "Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au^+ Ions Implanted into Si"Jpn.J.Appl.Phys.. 41. 918-921 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Narusawa: "Direct Growth of Epitaxial CoSi_2 on Si(001) Surfaces studied by RBS and TEM"Proceding of 5th Russia-Japan Seminar on Semiconductor Surfaces. C3 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Ishida et al.: "Epitaxial growth of CoSi_2 on hydrogen-terminated Si(001)"Appl.Phys.Lett.. Mar.24 issue(発表予定). (2003)

    • Related Report
      2002 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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